BZX79-C5V1-A52R - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1996 Apr 26 1999 May 25

DISCRETE SEMICONDUCTORS

BZX79 series

Voltage regulator diodes

M3D176

1999 May 25 2

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

FEATURES

•Total power dissipation:

max. 500 mW

•Three tolerance series: ±1%, ±2%,

and approx. ±5%

•Working voltage range:

nom. 2.4 to 75 V (E24 range)

•Non-repetitive peak reverse power

dissipation: max. 40 W.

APPLICATIONS

•Low voltage stabilizers or voltage

references.

DESCRIPTION

Low-power voltage regulator diodes in hermetically sealed leaded glass

SOD27 (DO-35) packages. The diodes are available in the normalized E24

±1% (BZX79-A), ±2% (BZX79-B), and approx.±5% (BZX79-C) tolerance

range. The series consists of 37 types with nominal working voltages from

2.4 to 75 V.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

The diodes are type branded.

handbook, halfpage

MAM239

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Device mounted on a printed circuit-board without metallization pad; lead length max.

2. Tie-point temperature ≤50 °C; max. lead length 8 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZSM non-repetitive peak reverse current tp= 100 µs; square wave;

Tj=25°C prior to surge see Tables

1, 2, 3 and 4

Ptot total power dissipation Tamb =50°C; note 1 −400 mW

Tamb =50°C; note 2 −500 mW

PZSM non-repetitive peak reverse power

dissipation tp= 100 µs; square wave;

Tj=25°C prior to surge; see Fig.3 −40 W

Tstg storage temperature −65 +200 °C

Tjjunction temperature −65 +200 °C

1999 May 25 3

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

ELECTRICAL CHARACTERISTICS

Total BZX79-A, B and C series

Tj=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF= 10 mA; see Fig.4 0.9 V

IRreverse current

BZX79-A/B/C2V4 VR=1V 50 µA

BZX79-A/B/C2V7 VR=1V 20 µA

BZX79-A/B/C3V0 VR=1V 10 µA

BZX79-A/B/C3V3 VR=1V 5 µA

BZX79-A/B/C3V6 VR=1V 5 µA

BZX79-A/B/C3V9 VR=1V 3 µA

BZX79-A/B/C4V3 VR=1V 3 µA

BZX79-A/B/C4V7 VR=2V 3 µA

BZX79-A/B/C5V1 VR=2V 2 µA

BZX79-A/B/C5V6 VR=2V 1 µA

BZX79-A/B/C6V2 VR=4V 3 µA

BZX79-A/B/C6V8 VR=4V 2 µA

BZX79-A/B/C7V5 VR=5V 1 µA

BZX79-A/B/C8V2 VR= 5 V 700 nA

BZX79-A/B/C9V1 VR= 6 V 500 nA

BZX79-A/B/C10 VR= 7 V 200 nA

BZX79-A/B/C11 VR= 8 V 100 nA

BZX79-A/B/C12 VR= 8 V 100 nA

BZX79-A/B/C13 VR= 8 V 100 nA

BZX79-A/B/C15 to 75 VR= 0.7VZnom 50 nA

1999 May 25 4

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

Table 1 Per type BZX79-A/B2V4 to A/B24

Tj=25°C unless otherwise specified.

BZX79-

A or B

XXX

WORKING VOLTAGE

VZ(V)

at IZtest =5mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ(mV/K)

at IZtest =5mA

(see Figs 5 and 6)

DIODE CAP.

Cd(pF)

at f = 1 MHz;

VR=0V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp= 100 µs; Tamb =25°C

Tol. ±1% (A) Tol. ±2% (B) at IZtest = 1 mA at IZtest =5mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.37 2.43 2.35 2.45 275 600 70 100 −3.5 −1.6 0 450 6.0

2V7 2.67 2.73 2.65 2.75 300 600 75 100 −3.5 −2.0 0 450 6.0

3V0 2.97 3.03 2.94 3.06 325 600 80 95 −3.5 −2.1 0 450 6.0

3V3 3.26 3.34 3.23 3.37 350 600 85 95 −3.5 −2.4 0 450 6.0

3V6 3.56 3.64 3.53 3.67 375 600 85 90 −3.5 −2.4 0 450 6.0

3V9 3.86 3.94 3.82 3.98 400 600 85 90 −3.5 −2.5 0 450 6.0

4V3 4.25 4.35 4.21 4.39 410 600 80 90 −3.5 −2.5 0 450 6.0

4V7 4.65 4.75 4.61 4.79 425 500 50 80 −3.5 −1.4 0.2 300 6.0

5V1 5.04 5.16 5.00 5.20 400 480 40 60 −2.7 −0.8 1.2 300 6.0

5V6 5.54 5.66 5.49 5.71 80 400 15 40 −2.0 1.2 2.5 300 6.0

6V2 6.13 6.27 6.08 6.32 40 150 6 10 0.4 2.3 3.7 200 6.0

6V8 6.73 6.87 6.66 6.94 30 80 6 15 1.2 3.0 4.5 200 6.0

7V5 7.42 7.58 7.35 7.65 30 80 6 15 2.5 4.0 5.3 150 4.0

8V2 8.11 8.29 8.04 8.36 40 80 6 15 3.2 4.6 6.2 150 4.0

9V1 9.00 9.20 8.92 9.28 40 100 6 15 3.8 5.5 7.0 150 3.0

10 9.90 10.10 9.80 10.20 50 150 8 20 4.5 6.4 8.0 90 3.0

11 10.89 11.11 10.80 11.20 50 150 10 20 5.4 7.4 9.0 85 2.5

12 11.88 12.12 11.80 12.20 50 150 10 25 6.0 8.4 10.0 85 2.5

13 12.87 13.13 12.70 13.30 50 170 10 30 7.0 9.4 11.0 80 2.5

15 14.85 15.15 14.70 15.30 50 200 10 30 9.2 11.4 13.0 75 2.0

16 15.84 16.16 15.70 16.30 50 200 10 40 10.4 12.4 14.0 75 1.5

18 17.82 18.18 17.60 18.40 50 225 10 45 12.4 14.4 16.0 70 1.5

20 19.80 20.20 19.60 20.40 60 225 15 55 14.4 16.4 18.0 60 1.5

22 21.78 22.22 21.60 22.40 60 250 20 55 16.4 18.4 20.0 60 1.25

24 23.76 24.24 23.50 24.50 60 250 25 70 18.4 20.4 22.0 55 1.25

1999 May 25 5

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

Table 2 Per type BZX79-A/B27 to A/B75

Tj=25°C unless otherwise specified.

BZX79-

A or B

XXX

WORKING VOLTAGE

VZ(V)

at IZtest =2mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ(mV/K)

at IZtest =2mA

(see Figs 5 and 6)

DIODE CAP.

Cd(pF)

at f = 1 MHz;

VR=0V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp= 100 µs; Tamb =25°C

Tol. ±1% (A) Tol. ±2% (B) at IZtest = 0.5 mA at IZtest =2mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 26.73 27.27 26.50 27.50 65 300 25 80 21.4 23.4 25.3 50 1.0

30 29.70 30.30 29.40 30.60 70 300 30 80 24.4 26.6 29.4 50 1.0

33 32.67 33.33 32.30 33.70 75 325 35 80 27.4 29.7 33.4 45 0.9

36 35.64 36.36 35.30 36.70 80 350 35 90 30.4 33.0 37.4 45 0.8

39 38.61 39.39 38.20 39.80 80 350 40 130 33.4 36.4 41.2 45 0.7

43 42.57 43.43 42.10 43.90 85 375 45 150 37.6 41.2 46.6 40 0.6

47 46.53 47.47 46.10 47.90 85 375 50 170 42.0 46.1 51.8 40 0.5

51 50.49 51.51 50.00 52.00 90 400 60 180 46.6 51.0 57.2 40 0.4

56 55.44 56.56 54.90 57.10 100 425 70 200 52.2 57.0 63.8 40 0.3

62 61.38 62.62 60.80 63.20 120 450 80 215 58.8 64.4 71.6 35 0.3

68 67.32 68.68 66.60 69.40 150 475 90 240 65.6 71.7 79.8 35 0.25

75 74.25 75.75 73.50 76.50 170 500 95 255 73.4 80.2 88.6 35 0.2

1999 May 25 6

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

Table 3 Per type BZX79-C2V4 to C24

Tj=25°C unless otherwise specified.

BZX79

-C

XXX

WORKING VOLTAGE

VZ(V)

at IZtest =5mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ(mV/K)

at IZtest =5mA

(see Figs 5 and 6)

DIODE CAP.

Cd(pF)

at f = 1 MHz;

VR=0V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp= 100 µs; Tamb =25°C

Tol. approx. ±5% (C) at IZtest = 1 mA at IZtest =5mA

MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0

2V7 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0

3V0 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0

3V3 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0

3V6 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0

3V9 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0

4V3 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0

4V7 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0

5V1 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0

5V6 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0

6V2 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0

6V8 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0

7V5 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0

8V2 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0

9V1 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0

10 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0

11 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5

12 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5

13 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5

15 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0

16 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5

18 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5

20 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5

22 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25

24 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25

1999 May 25 7

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

Table 4 Per type BZX79-C27 to C75

Tj=25°C unless otherwise specified.

BZX79

-C

XXX

WORKING

VOLTAGE

VZ(V)

at IZtest =2mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ(mV/K)

at IZtest =2mA

(see Figs 5 and 6)

DIODE CAP.

Cd(pF)

at f = 1 MHz;

VR=0V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp= 100 µs; Tamb =25°C

Tol.approx. ±5% (C) at IZtest = 0.5 mA at IZtest =2mA

MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0

30 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0

33 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9

36 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8

39 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7

43 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6

47 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5

51 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4

56 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3

62 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3

68 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25

75 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

1999 May 25 8

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W

Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W

GRAPHICAL DATA

handbook, full pagewidth

10−111010

2103104105

MBG930

102

103

tp (ms)

tptp

δ =

0.02

0.01

≤0.001

0.75

0.50

0.33

0.20

0.10

0.05

δ = 1

Rth j-a

(K/W)

Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.

1999 May 25 9

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

Fig.3 Maximum permissible non-repetitive

peak reverse power dissipation

versus duration.

handbook, halfpage

MBG801

103

1 duration (ms)

PZSM

(W)

102

10−1

(1)

(2)

(1) Tj=25°C (prior to surge).

(2) Tj= 150 °C (prior to surge).

Fig.4 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6 1.0

300

100

200

MBG781

0.8 VF (V)

(mA)

Tj=25°C.

Fig.5 Temperature coefficient as a function of

working current; typical values.

handbook, halfpage

060

−2

−3

−1

MBG783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

BZX79-A/B/C2V4 to A/B/C4V3.

Tj=25to150°C.

Fig.6 Temperature coefficient as a function of

working current; typical values.

handbook, halfpage

02016

−5

MBG782

4812 I

(mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

BZX79-A/B/C4V7 to A/B/C12.

Tj=25to150°C.

1999 May 25 10

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

Note

1. The marking band indicates the cathode.

SOD27 DO-35A24 SC-40 97-06-09

Hermetically sealed glass package; axial leaded; 2 leads SOD27

UNIT b

max.

mm 0.56

max. G1

max.

25.44.251.85

min.

DIMENSIONS (mm are the original dimensions)

LD L

(1)

0 1 2 mm

scale

1999 May 25 11

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999 65

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Printed in The Netherlands 115002/02/pp12 Date of release: 1999 May 25 Document order number: 9397 750 05894