Order this document by MRF553/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for wideband large signal predriver stages in the VHF frequency range. * Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ) 1.5 W, 175 MHz RF LOW POWER TRANSISTOR NPN SILICON * Cost Effective PowerMacro Package * Electroless Tin Plated Leads for Improved Solderability * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 16 Vdc Collector-Base Voltage VCBO 36 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 500 mAdc Total Device Dissipation @ TC = 75C (1, 2) Derate above 75C PD 3.0 40 Watts mW/C Storage Temperature Range Tstg - 55 to +150 C CASE 317D-02, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Case Symbol Max Unit RJC 25 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 16 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 -- -- Vdc Collector-Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) V(BR)CBO 36 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 4.0 -- -- Vdc ICES -- -- 5.0 mAdc hFE 30 -- 200 -- Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25C) ON CHARACTERISTICS DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) NOTES: (continued) 1. TC, Case temperature measured on collector lead immediately adjacent to body of package. 2. The MRF553 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor," discusses methods of mounting and heatsinking. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF553 1 ELECTRICAL CHARACTERISTICS -- continued (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Cob -- 12 20 pF DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz) Figures 1, 2 Gpe 11.5 13 -- dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz) Figures 1, 2 50 60 -- % Load Mismatch Stress (VCC = 12.5 Vdc, Pout = 1.5 W, f = 175 MHz, VSWR 10:1 All Phase Angles) -- No Degradation in Output Power 5xB R1 VBB = 12.5 V VCC = 12.5 V L9 C5 C6 + R2 + B D1 C9 C10 L5 C8 B C4 L8 L4 D.U.T. L1 RF INPUT C2 L6 L7 C7 RF OUTPUT L3 L2 C1 C3 C1 -- 36 pF Mini Underwood C2 -- 47 pF Mini Underwood C3 -- 91 pF Mini Underwood C4 -- 68 pF Mini Underwood C5, C9 -- 1.0 F Erie Red Cap Capacitor C6, C10 -- 0.1 F, 35 V Tantulum C7 -- 470 pF Chip Capacitor C8 -- 2200 pF Chip Capacitor R1 -- 4.7 k, 1/4 W R2 -- 100 , 1/4 W D1 -- 1N4148 Diode L1 -- 3 Turns, #18 AWG, 0.210 ID, 3/16 Length L2, L4, L7 -- 0.62, #18 AWG Wire Bent into "V" L3, L6 -- 60 x 125 x 250 Mils Copper Pad on 27 Mils Thick Alumina Substrate L5 -- 12 H Molded Choke L8 -- 7 Turns, #18 AWG, 0.170 ID, 7/16 Length L9 -- 1.0, #18 AWG Wire with 5 Ferrite Beads B -- Ferrite Bead Board Material -- Glass Teflon, r = 2.56, t = 0.0625 Figure 1. 140 - 175 MHz Broadband Circuit Schematic MRF553 2 MOTOROLA RF DEVICE DATA 100 18 90 80 Gpe 14 12 IRL, INPUT RETURN LOSS (dB) G pe , POWER GAIN (dB) 16 c 10 Pout = 1.5 W, VCC = 12.5 Vdc 8 6 IRL 4 2 140 150 160 f, FREQUENCY (MHz) 70 60 50 5 40 10 30 15 20 20 10 c , COLLECTOR EFFICIENCY (%) 20 0 180 170 Figure 2. Typical Performance in Broadband Circuit Zin Ohms ZOL* Ohms f Frequency MHz 100 mW 200 mW 300 mW 50 mW 100 mW 150 mW 140 1.65-j3.6 2.0-j2.6 2.3-j1.2 1.7-j4.1 1.8-j3.1 175 2.5-j5.6 2.3-j5.9 2.8-j4.0 2.3-j4.6 2.4-j1.2 VCC = 7.5 V; Pin VCC = 12.5 V; Pin VCC = 7.5 V; Pout 1.0 W 1.6 W 1.9-j2.7 9.9-j11.1 2.4-j5.7 12.1-j14.9 VCC = 12.5 V; Pout 2.2 W 1.1 W 2.0 W 2.6 W 10.6-j5.1 10-j4.9 28.3-j21.5 16-j20.5 16.3-j16.5 7.2-j9.8 8.1-j5.4 30.8-j23.3 11.4-j20.9 11.1-j14.3 Zin Ohms ZOL* Ohms f Frequency MHz 50 mW 100 mW 200 mW 25 mW 50 mW 100 mW 1.25 W 1.5 W 2.0 W 1.5 W 2.25 W 3.0 W 90 2.5-j9.3 2.5-j6.4 2.5-j4.4 1.6-j10.7 2.5-j7.1 2.2-j1.3 31.8-j9.2 32-j8.9 30.2-j10.7 45.8-j7.2 45.2-j3.9 40-j4.5 VCC = 7.5 V; Pin VCC = 12.5 V; Pin VCC = 7.5 V; Pout VCC = 12.5 V; Pout ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Table 1. Zin and ZOL versus Collector Voltage, Input Power, and Output Power MOTOROLA RF DEVICE DATA MRF553 3 4 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) 2.5 2 1.5 1 f = 175 MHz VCC = 7.5 Vdc 0.5 0 100 200 Pin, POWER INPUT (mW) 300 3 2 f = 175 MHz VCC = 12.5 Vdc 1 Figure 3. Power Output versus Power Input 100 Pin, POWER INPUT (mW) 200 150 Figure 4. Power Output versus Power Input 4 4 Pout , OUTPUT POWER (WATTS) Pout , POWER OUTPUT (WATTS) 50 0 400 3 Pin = 300 mW 2 200 mW 100 mW 1 3 Pin = 150 mW 100 mW 2 50 mW 1 VCC = 7.5 Vdc 140 150 VCC = 12.5 Vdc 160 f, FREQUENCY (MHz) 170 180 140 Figure 5. Power Output versus Frequency 150 160 f, FREQUENCY (MHz) 170 180 Figure 6. Power Output versus Frequency 4 4 Pin = 150 mW 3 2 Pout , POWER OUTPUT (WATTS) Pout , POWER OUTPUT (WATTS) Pin = 150 mW f = 140 MHz 100 mW 50 mW 1 6 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 Figure 7. Power Output versus Collector Voltage MRF553 4 16 f = 175 MHz 3 100 mW 2 50 mW 1 6 8 10 12 VCC, COLLECTOR VOLTAGE (Vdc) 14 16 Figure 8. Power Output versus Collector Voltage MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F H R 1 A 4 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION N AND R. 3 D K N T SEATING PLANE C DIM A C D F H J K N R T INCHES MIN MAX 0.175 0.205 0.075 0.100 0.033 0.039 0.097 0.104 0.348 0.383 0.008 0.012 0.285 0.320 --- 0.065 --- 0.128 0.025 0.040 MILLIMETERS MIN MAX 4.45 5.20 1.91 2.54 0.84 0.99 2.46 2.64 8.84 9.72 0.24 0.30 7.24 8.12 --- 1.65 --- 3.25 0.64 1.01 J STYLE 2: PIN 1. 2. 3. 4. COLLECTOR EMITTER BASE EMITTER CASE 317D-02 ISSUE C MOTOROLA RF DEVICE DATA MRF553 5 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF553 6 *MRF553/D* MRF553/D MOTOROLA RF DEVICE DATA