AYZ iorteomomes ( TLO81 TLO81A - TLO81B GENERAL PURPOSE SINGLE J-FET OPERATIONAL AMPLIFIERS a LOW POWER CONSUMPTION = WIDE COMMON-MODE (UP TO Vcc*) AND DIFFERENTIAL VOLTAGE RANGE as LOW INPUT BIAS AND OFFSET CURRENT s OUTPUT SHORT-CIRCUIT PROTECTION ws HIGH INPUT IMPEDANCE FET INPUT STAGE N D a INTERNAL FREQUENCY COMPENSATION DIPS sos 2 LATCH UP FREE OPERATION (Plastic Package) (Plastic Micropackage) HIGH SLEW RATE : 16V/us (typ) H Toss (Metal Can) DESCRIPTION ORDER CODES The TLO81, TLO81A and TLO81B are high speed Package J-FET input single operational amplifiers incorporating Part Number Temperature HINID well matched, high voltage J-FET and bipolar transis- 5 5 tors in a monolithic integrated circuit. ONAL 88C, +128 C ey eye The devices feature high slew rates, lowinputbiasand | TLOBTVAN/EI AOC +1086 je} ets offset currents, and iow offset voltage temperature TLOBIC/AC/BC OC, +70C ie coefficient. Examples : TLO81CD, TLO81IN PIN CONNECTIONS (top views) TOSS DIPB/SO8 1 - Offset Null 1 2 - Inverting input O 4 ya 3 - Non-inverting input a hy 1 Oe PE 5 - Offset Null 2 3 ps 6 - Output 4 rs 7 -Vec* , 8-NC. 081-01.EPS 081-02.EPS December 1992 VW 655 081-01.TBLTLO81 - TLO81A - TLO81B SCHEMATIC DIAGRAM 081-03.EPS INPUT OFFSET VOLTAGE NULL CIRCUITS TLOB1 Nt N2 100k Q vo e 081-04.EPS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vec | Supply Voltage - (note 1) +18 Vv Vi Input Voltage - (note 3) +15 Vv Via Differential input Voltage - (note 2) +30 v Prot Power Dissipation 680 mw Output Short-circuit Duration - (note 4) Infinite Toper {| Operating Free Air Temperature Range TLO81C,AC,BC Q to 70 C TLO811,Ai,BI 40 to 105 TLO81M,AM,BM 55 to 125 Tsig Storage Temperature Range 65 to 150 C _OR1-09 TRI Notes: 1. Ail voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero referance level is the midpoint between Vcc and Voc". 2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is jess. 4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded. 47 Ses -THonSON 656ELECTRICAL CHARACTERISTICS Voc = +15V, Tamp = 25C (unless otherwise specified) TLO81 - TLO81A - TLO81B TLO811,M,AC,Al, Symbo! Parameter AM,BC,BI,BM TLOBIC Unit Min. | Typ. | Max. | Min. | Typ. | Max. Vio Input Offset Voltage (Rs = 500) mv Tamp = 25C 3 6 3 10 TL081BC,BI,BM 1 3 Twin. < Tamb S Tmax. 7 13 TLO818C,B1,BM 5 DVio__| Input Offset Voltage Drift 10 10 pvc lio Input Offset Current . Tamp = 25C 5 100 5 100 pA Tmmin. S$ Tamb S Tmax. 4 4 nA lo Input Bias Current . Tamb = 25C 20 | 200 20 ; 400 pA Tmin. S Tamb S Tmax. 20 20 nA Ava Lar Signa yohage Gain (Ri = 2kQ, Vo = +10V) VimvV amb = 0 | 200 -25 | 200 Tin, S Pas S Trax. 25 15 SVR Supply Voltage Rejection Ratio (As = 502) dB Pee = 25C 80 86 70 86 Trin. S Tamb S Tmax. 80 70 lec Supply Current, no Load mA Tamb = 25C 14 | 25 14) 25 Tinin. S Tamo < Tmax. 25 2.5 Viem Input Common Mode Voltage Range +11 : +11 +18 Vv CMR_ | Common Mode Rejection Ratio (Rs = 50) - dB Tamp = 25C 80 | 86 70 | 86 Trin. S Tamb Tmax. 80 70 los Output Short-circuit Current mA Tamb = 25C 10 40 60 10 40 60 Timin, Tamb < Tmax. 10 60 10 60 +Vope | Output Voltage | Swing Vv Tamp = 25C Ar= 2kQ 10 12 10 12 Ry = 10kQ 12 | 13.5 12 | 13.5 Trin. S Tamb S Tmax. Ri= 2kQ 10 10 Ai = 10kQ 12 12 SR Siew Rate (Vin = 10V, Ri = 2kQ, C. = 100pF, Vins Tame = 25C, unity gain) 8 16 8 16 t Rise Time (Vin = 20mvV, Ri = 2kQ, C_ = 100pF, ys Tamb = 25C, unity gain) 0.1 0.1 Koy Overshoot Vin = 20mV, Ar = 2kQ, C. = 100pF, % Tamb = , unity gain) 10 10 GBP | Gain Serawaih Product (f = 100kHz, MHz Tamp = 25C, Vin = 10mV, Ri = 2kQ, CL = 100pF) | 2.5 4 25 | 4 Rj Input Resistance 10"? 10'2 Q THD | Total Harmonic Distortion (f = 1kHz, Av = 20dB, % FL = 2k, CL = 100pF, Tamb = 25C, Vo = 2Vpp) 0.01 0.01 4 Equivalent Input Noise Voltage nV, E @n | (f= 1kHz, Rs = 1009) 18 1s Vaz | & @m | Phase Margin 45 45 Degrees| 3 * The input bias currents are junction leakage currents which approximately double for every 10C increase in the junction temperature. SGS-THOMSON JF Rcnosuecrnoones i 657TLO81 - TLOS1A - TLO81B MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY . Vog = 2 15V Ry = kod z amb 2 +25" 5 See Figure 2 = = w ok zo ss 3 3 100 1K tOK OOK M TOM FREQUENCY (Hz) 081-05.EPS MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY 30 Tamb = +25C Tamp = +125C 10k 40k = 100k 400k =1M 4M 10M MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE (V) a FREQUENCY (Hz) 081-07.EPS MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS LOAD RESISTANCE MAXIMUM. PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREQUENCY RL 10k Tamb = +25 See Figure 2 VOLTAGE (V) MAXIMUM PEAK-TO-PEAK OUTPUT FREQUENCY (Hz) 081-06.EPS MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS FREE AIR TEMP. 5 | 25 artsy 5 do 20 z= R, = 100 Pi 45 weeeR, = 2KQ 71 3g L=2ka me 10 38 w 5 | Veg = 15V = 0 See Figure 2 5 -75 50 -25 0 25 50 75 -50 125 = TEMPERATURE ('C) 081-08.EPS MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE VERSUS SUPPLY VOLTAGE - E : z 3 5 3 5 is ea : a = e3 eg = a 2 Bo z = = 3 0102 04 O71 2 4 7 10 3 0 2 4 6 68 10 12 14 16 _ LOAD RESISTANCE (k 2) s SUPPLY VOLTAGE (+V) 081-09.EPS 081-10.EPS wr Gy 868-THomson JZ microcuecrnonesINPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE = & Ww 3 w & ke 2 z $0 8-25 0 25 50 75 100 125 TEMPERATURE (C) 081-11.EPS LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY Vege Bvt | wy 410 J RL =2ka 7 = 4 : | Tamp = 425C 3= 49 _ 4 0 Q 5 oN DIFFERENTIAL x & 10 iN NX AMPLIFICATION] 45 ze me {left scale) i Xt Ez 101 | Tron seal) | \ 135 | | 180 1 10 100 ik 10k 100k 1M 10M FREQUENCY (Hz) 081-13.EPS SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE 2.0 18 Veg = + t8V 16 - No signal 1.4 No load 1.2 10 0.8 0.6 04 02 0 SUPPLY CURRENT (mA) 75 50 25 0 25 580 75 100 125 TEMPERATURE (C) 081-15.EPS Ts ELS TLOS1 - TLO81A - TLO81B LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE 1000 400 8% Z& 20 ES 9 L Vee = 15V eZ Vo = HOV 2 2 CR,=%ka a 1 % 80 26 O 2% 50 75 TEMPERATURE (C) 400 125 081-12.EPS TOTAL POWER DISSIPATION VERSUS FREE AIR TEMPERATURE 250 225 200 175 150 125 100 75 50 25 0 TOTAL POWER DISSIPATION (mW) 7% 50 -25 0 22% 50 75 100 125 TEMPERATURE ("C) 081-14.EPS SUPPLY CURRENT PER AMPLIFIER VERSUS SUPPLY VOLTAGE _ 20 t 18 Tamb = +25C E . : 5 1.6 | No signal rf 1.4 | No load 1.2 o os > . g 0.6 a 0.4 0.2 0 2 4 6 8 10 12 #14 #16 SUPPLY VOLTAGE ( +V) 081-16.EPS 5/7 659TLO81 - TLO81A - TLO81B COMMON MODE REJECTION RATIO VERSUS FREE AiR TEMPERATURE 5 Oo aS ge * ge 85 = 84 : 75-50 25 0 2 50 75 100 125 TEMPERATURE ('C) 081-17.EPS OUTPUT VOLTAGE VERSUS ELAPSED TIME 28 24 16 Veg 21 15V R,=2kQ t; Tam = +25C 0 01 02 03 04 05 06 07 TIME (us) OUTPUT VOLTAGE (mV) x} hon @ 081-19.EPS VOLTAGE FOLLOWER LARGE SIGNAL PULSE RESPONSE 6 3 4 OUTPUT. S tS ny 5 ' INPUT = 90 : +; V f Chee RL= : = 4 C, = 100pF : \ = eee 0 O05 1 15 2 25 3 35 TIME (us) 081-18.EPS EQUIVALENT INPUT NOISE VOLTAGE VERSUS FREQUENCY Veco = t15V Ay =10 Rs = 102 Tamp = +25C VOLTAGE (aVVHz) EQUIVALENT INPUT NOISE 0 10 40 100 400 1k 4k 10k 40k 100k FREQUENCY (H2} 081-20.EPS TOTAL HARMONIC DISTORTION VERSUS FREQUENCY = 9, 3 V nn = t15V ce V 0 toma) = BV 2 Tama = 425C ok : = z 5 = THOMSON CROELECTRONICS 4k 10k 40k = 100k FREQUENCY (Hz) 081-21.EPSPARAMETER MEASUREMENT INFORMATION Figure 1 : Voltage Follower TLOS1 - TLO81A - TLOS1B Figure 2 : Gain-of-10 Inverting Amplifier | & O : *o C= 100pF Ry = 2k e C= 100pF 061-22.EPS 081-23.EPS TYPICAL APPLICATIONS (0.5Hz) SQUARE WAVE OSCILLATOR 081-24.EPS HIGH Q NOTCH FILTER = <1 = tktz 2xR,C, C1=C25 gS. 100pF Ait = R= 2R3 = 1. 5MQ C1 c2 a . 081-25.EPS G7 $68-THomson mn IL sara 661