MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SD1433 Features * * NPN Silicon Power Transistors With TO-3PH package Horizontal deflection output driver Maximum Ratings Symbol V CEO V CBO V EBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 600 1500 7.0 7.0 80 -55 to +150 -55 to +150 TO-3PH Unit V V V A W O C O C Electrical Characteristics @ 25 OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage (IC=100mAdc, IB =0) Collector-Base Cutoff Current (VCB=500Vdc,IE =0) Emitter-Base Cutoff Current (VEB =7.0Vdc, IC=0) 600 --- Vdc --- 10 uAdc --- 1.0 mAdc OFF CHARACTERISTICS V (BR)CEO ICBO IEBO ON CHARACTERISTICS hFE V CE(sat) V BE(SAT) Forward Current Transfer ratio (IC=1.0Adc, VCE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=6.0Adc, IB =1.2Adc) Base-Emitter Saturation Voltage (IC=6.0Adc,IB =1.2Adc) 8.0 --- --- --- 5.0 Vdc --- 1.5 Vdc DIMENSIONS DIM A B C D E F G H J K L M N P Q R INCHES MIN .598 .165 .053 .146 .069 .033 .207 .018 .098 .189 .665 .232 1.031 .134 .039 .886 www.mccsemi.com MAX .622 .189 .069 .169 .089 .045 .222 .030 .122 .205 .713 .280 1.055 .150 .079 .925 MM MIN 15.20 4.20 1.35 3.70 1.75 .85 5.25 .45 2.50 4.80 16.90 5.90 26.20 3.40 1.00 22.50 MAX 15.80 4.80 1.75 4.30 2.25 1.15 5.65 .75 3.10 5.20 18.10 7.10 26.80 3.80 2.00 23.50 NOTE