2SD1433
NPN Silicon
Power Transistors
Features
• With TO-3PH package
• Horizontal deflection output driver
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 600 V
VCBO Collector-Base Voltage 1500 V
VEBO Emitter-Base Voltage 7.0 V
IC Collector Current 7.0 A
PC Collector power dissipation 80 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=100mAdc, IB=0) 600 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=500Vdc,IE=0) --- 10 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0) --- 1.0 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=1.0Adc, VCE=5.0Vdc) 8.0 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=6.0Adc, IB=1.2Adc) --- 5.0 Vdc
VBE(SAT) Base-Emitter Saturation Voltage
(IC=6.0Adc,IB=1.2Adc) --- 1.5 Vdc
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .598 .622 15.20 15.80
B .165 .189 4.20 4.80
C .053 .069 1.35 1.75
D .146 .169 3.70 4.30
E .069 .089 1.75 2.25
F .033 .045 .85 1.15
G .207 .222 5.25 5.65
H .018 .030 .45 .75
J .098 .122 2.50 3.10
K .189 .205 4.80 5.20
L .665 .713 16.90 18.10
M .232 .280 5.90 7.10
N 1.031 1.055 26.20 26.80
P .134 .150 3.40 3.80
Q .039 .079 1.00 2.00
R .886 .925 22.50 23.50
∅
omponents
21201 Itasca Street Chatsworth
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MCC
www.mccsemi.com
TO-3PH
