LTC5531 Precision 300MHz to 7GHz RF Detector with Shutdown and Offset Adjustment U DESCRIPTIO FEATURES Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz* Wide Input Power Range: -32dBm to 10dBm Buffered Detector Output Precision VOUT Offset Control Wide VCC Range of 2.7V to 6V Low Operating Current: 500A Low Shutdown Current: <2A Available in a Low Profile (1mm) SOT-23 Package U APPLICATIO S 802.11a, 802.11b, 802.11g, 802.15, 802.16 Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. A power saving shutdown mode reduces current to less than 2A. The initial offset voltage of 120mV 35mV can be precisely adjusted using the VOS pin. The LTC5531 operates with input power levels from -32dBm to 10dBm. , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. *Higher frequency operation is achievable with reduced performance. Consult factory for more information. U The LTC(R)5531 is an RF power detector for RF applications operating in the 300MHz to 7GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH. TYPICAL APPLICATIO VOUT Output Voltage vs RF Input Power 3600 33pF RF INPUT 1 LTC5531 VCC 6 RFIN VCC 100pF 2 DISABLE ENABLE 3 GND SHDN VOUT 5 4 VOS VOS REFERENCE 5531 TA01 0.1F VOUT OUTPUT VOLTAGE (mV) 300MHz to 7GHz RF Power Detector VOS = 0V 3200 VCC = 3.6V TA = 25C 2800 2000MHz 1000MHz 4000MHz 2400 2000 3000MHz 1600 1200 800 400 300MHz 5000MHz 6000MHz 7000MHz 0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm) 6 10 5531 TA02 5531f 1 LTC5531 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) VCC, VOUT, SHDN, VOS .................................... -0.3V to 6.5V RFIN Voltage ......................................(VCC 1.5V) to 7V RFIN Power (RMS) .............................................. 12dBm IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec).................. 300C ORDER PART NUMBER TOP VIEW LTC5531ES6 RFIN 1 6 VCC GND 2 5 VOUT SHDN 3 4 VOS S6 PART MARKING S6 PACKAGE 6-LEAD PLASTIC TSOT-23 TJMAX = 125C, JA = 250C/W LTBBQ Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, VOS = 0V and SHDN = HI unless otherwise noted. PARAMETER CONDITIONS MIN VCC Operating Voltage TYP 2.7 MAX UNITS 6 0.5 V IVCC Operating Current IVOUT = 0mA IVCC Shutdown Current SHDN = LO 0.01 2 A VOUT (No RF Input) RLOAD = 2k, VOS = 0V SHDN = LO 85 100 to 140 1 155 mV mV VOUT Output Current VOUT = 1.75V, VCC = 2.7V, VOUT < 10mV 2 4 VOUT Enable Time SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k VOUT Bandwidth CLOAD = 33pF, RLOAD = 2k (Note 4) VOUT Load Capacitance (Notes 6, 7) VOUT Slew Rate VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) 3 V/s VOUT Noise VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination 1 mVP-P 8 0.7 mA mA s 20 2 MHz 33 pF VOS Voltage Range 0 1 V VOS Input Current -0.5 0.5 A 0.35 V 36 A SHDN Voltage, Chip Disabled VCC = 2.7V to 6V SHDN Voltage, Chip Enabled VCC = 2.7V to 6V SHDN Input Current SHDN = 3.6V RFIN Input Frequency Range (Note 8) RFIN Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V RFIN AC Input Resistance F = 1000MHz, Pin = -25dBm 220 RFIN Input Shunt Capacitance F = 1000MHz, Pin = -25dBm 0.65 pF Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between 1.3V and 2.3V. Note 4: Bandwidth is calculated based on the 10% to 90% rise time 1.4 V 22 300 to 7000 MHz -32 to 10 dBm equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design. Note 7: Capacitive loading greater than this value may result in circuit instability. Note 8: Higher frequency operation is achievable with reduced performance. Consult factory for more information. 5531f 2 LTC5531 U W TYPICAL PERFOR A CE CHARACTERISTICS VOUT Output Voltage vs VCC Supply Voltage (RF Input Signal Off) 520 VOS = 0V VOUT vs RF Input Power and VOS, fRF = 300MHz 3600 VOS = 0V VCC = 3.6V 3200 TA = 25C TA = -40C TA = 85C 125 TA = 25C TA = -40C 120 VOUT OUTPUT VOLTAGE (mV) SUPPLY CURRENT (A) 500 130 TA = 25C 480 TA = 85C 460 440 2800 2400 2000 1600 1200 800 VOS = 1V VOS = 0.5V 400 3.5 4.0 4.5 5.0 SUPPLY VOLTAGE (V) 5.5 420 2.5 6.0 3.0 3.5 4.0 4.5 5.0 SUPPLY VOLTAGE (V) 5.5 VOUT vs RF Input Power and VOS, fRF = 1000MHz 5600 VCC = 3.6V 3200 TA = 25C VOUT OUTPUT VOLTAGE (mV) 2400 2000 1600 400 VOS = 1V VOS = 0.5V VOS = 0.2V 5531 G03 4000 3200 2400 VCC = 6V VCC = 5V VCC = 4V VCC = 3V 1600 800 VOS = 0V 0 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 -32 -28 -24 -20 -16 -12 -8 -4 0 4 RF INPUT POWER (dBm) 8 Typical Detector Characteristics, 300MHz 3200 Typical Detector Characteristics, 1000MHz 3600 VOS = 0V 3200 VCC = 3.6V VOS = 0V VCC = 3.6V 2800 2400 TA = -40C 2000 1600 TA = 25C 1200 800 400 8 12 5531 G05 5531 G04 3600 8 VOS = 0V TA = 25C 4800 2800 800 4 VOUT vs RF Input Power and VCC Supply Voltage, fRF = 1000MHz 3600 1200 6.0 VOS = 0.2V VOS = 0V 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 5531 G02 5531 G01 VOUT OUTPUT VOLTAGE (mV) 3.0 VOUT OUTPUT VOLTAGE (mV) 115 2.5 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) 135 ICC Power Supply Current vs VCC Supply Voltage (RF Input Signal Off) TA = 85C 0 4 8 RF INPUT POWER (dBm) 5531 G06 TA = -40C 2400 2000 1600 TA = 25C 1200 800 400 0 -32 -28 -24 -20 -16 -12 -8 -4 2800 TA = 85C 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) 4 8 5531 G07 5531f 3 LTC5531 U W TYPICAL PERFOR A CE CHARACTERISTICS Typical Detector Characteristics, 2000MHz Typical Detector Characteristics, 3000MHz 3600 3600 3600 2800 TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 400 0 -32 -28 -24 -20 -16 -12 -8 -4 0 RF INPUT POWER (dBm) VOS = 0V 3200 VCC = 3.6V 2800 TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 400 4 0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm) 8 2000 TA = 25C 1600 1200 800 TA = 85C 6 0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm) 10 5531 G10 VOUT OUTPUT VOLTAGE (mV) VOS = 0V 3200 VCC = 3.6V TA = -40C 2400 2000 TA = 25C 1200 800 2800 0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm) TA = -40C 2400 2000 TA = 25C 1600 1200 800 TA = 85C 400 TA = 85C 400 6 0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm) 10 6 5531 G11 VOUT Slope vs RF Input Power at 300MHz 3600 1000 VOS = 0V 3200 VCC = 3.6V TA = -40C VOUT SLOPE (mV/dB) VOUT OUTPUT VOLTAGE (mV) 10 5531 G12 Typical Detector Characteristics, 7000MHz 2400 2000 1600 10 3600 VOS = 0V 3200 VCC = 3.6V 2800 6 Typical Detector Characteristics, 6000MHz 3600 VOUT OUTPUT VOLTAGE (mV) TA = -40C 2400 5531 G09 Typical Detector Characteristics, 5000MHz 1600 2800 400 5531 G07 2800 VOUT OUTPUT VOLTAGE (mV) VOS = 0V 3200 VCC = 3.6V VOUT OUTPUT VOLTAGE (mV) VOS = 0V 3200 VCC = 3.6V VOUT OUTPUT VOLTAGE (mV) Typical Detector Characteristics, 4000MHz TA = 25C 1200 100 TA = -40C TA = 85C 10 800 400 TA = 85C 0 -30 -26 -22 -18 -14 -10 -6 -2 2 RF INPUT POWER (dBm) 6 TA = 25C 10 5531 G13 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5 5531 G14 5531f 4 LTC5531 U W TYPICAL PERFOR A CE CHARACTERISTICS VOUT Slope vs RF Input Power at 1000MHz VOUT SLOPE (mV/dB) 100 TA = -40C TA = 85C 10 100 TA = -40C TA = 85C 10 VOS = 0V VCC = 3.6V 100 TA = -40C TA = 85C 10 TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) 1 -30 5 0 -25 TA = 25C -20 -15 -10 -5 RF INPUT POWER (dBm) 1000 VOUT SLOPE (mV/dB) 100 TA = -40C TA = 85C -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 100 TA = -40C 10 TA = 85C TA = 25C 1 -30 5 0 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) VOUT Slope vs RF Input Power at 7000MHz 1000 VOUT SLOPE (mV/dB) VOS = 0V VCC = 3.6V 100 TA = -40C TA = 85C VOS = 0V VCC = 3.6V 100 10 TA = -40C TA = 25C 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 5 0 5531 G19 VOUT Slope vs RF Input Power at 6000MHz 10 5 VOS = 0V VCC = 3.6V 5531 G18 1000 0 5531 G17 TA = 25C 1 -30 -20 -15 -10 -5 RF INPUT POWER (dBm) VOUT Slope vs RF Input Power at 5000MHz VOS = 0V VCC = 3.6V 10 -25 5531 G16 VOUT Slope vs RF Input Power at 4000MHz 1000 1 -30 5 0 5531 G15 VOUT SLOPE (mV/dB) -25 1000 VOS = 0V VCC = 3.6V TA = 25C 1 -30 VOUT Slope vs RF Input Power at 3000MHz VOUT SLOPE (mV/dB) 1000 VOS = 0V VCC = 3.6V VOUT SLOPE (mV/dB) VOUT SLOPE (mV/dB) 1000 VOUT Slope vs RF Input Power at 2000MHz TA = 85C TA = 25C 0 5 5531 G20 1 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 0 5 5531 G21 5531f 5 LTC5531 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 290.45 -136.22 0.50 234.41 -162.54 0.70 178.25 -170.53 0.90 137.31 -159.89 1.10 109.17 -147.57 1.30 86.30 -136.18 1.50 68.65 -121.74 1.70 57.48 -107.60 1.90 49.79 - 96.72 2.10 43.56 - 86.70 2.30 38.67 -77.91 2.50 34.82 -70.13 2.70 31.68 - 62.86 2.90 29.13 - 56.01 3.10 27.17 - 49.83 3.30 25.73 - 44.24 3.50 24.56 - 39.74 3.70 23.18 - 35.35 3.90 22.31 - 30.62 4.10 20.73 -26.88 4.30 19.88 -22.31 4.50 19.40 -18.23 4.70 19.05 -14.25 4.90 19.08 -10.21 5.10 19.55 - 6.30 5.30 20.85 - 2.84 5.50 21.94 -1.49 5.70 20.60 - 0.07 5.90 19.29 2.99 6.10 18.69 6.61 6.30 18.53 10.39 6.50 18.74 14.35 6.70 19.79 17.91 6.90 19.75 20.77 7.00 19.99 22.47 S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA03 5531f 6 LTC5531 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C) FREQUENCY (GHz) RESISTANCE () REACTANCE () 0.30 216.45 -76.47 0.50 190.63 -98.28 0.70 161.98 -112.03 0.90 133.17 -111.53 1.10 113.08 -109.05 1.30 94.55 -107.08 1.50 75.33 - 98.50 1.70 63.52 - 88.19 1.90 55.19 - 80.05 2.10 48.64 -72.23 2.30 43.73 - 64.81 2.50 39.71 - 58.31 2.70 36.47 - 52.27 2.90 33.69 - 46.77 3.10 31.61 - 41.25 3.30 29.78 -36.61 3.50 28.27 -32.39 3.70 26.63 -28.12 3.90 26.12 -23.97 4.10 24.20 -20.75 4.30 23.28 -16.69 4.50 22.60 -12.77 4.70 22.21 - 9.08 4.90 22.15 -5.24 5.10 22.61 -1.58 5.30 23.90 1.53 5.50 24.97 2.62 5.70 23.51 4.00 5.90 22.25 6.94 6.10 21.57 10.62 6.30 21.43 14.02 6.50 21.69 17.77 6.70 22.68 21.24 6.90 22.81 24.21 7.00 23.07 25.56 S11 Forward Reflection Impedance 0.3000GHz-7.000GHz 5508 TA04 5531f 7 LTC5531 U U U PI FU CTIO S RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 7GHz. This pin has an internal 500 termination, an internal Schottky diode detector and a peak detector capacitor. GND (Pin 2): Ground. SHDN (Pin 3): Shutdown Input. A logic low on the SHDN pin places the part in shutdown mode. A logic high enables the part. SHDN has an internal 160k pulldown resistor to ensure that the part is in shutdown when no input is applied. In shutdown VOUT is connected to ground via a 280 resistor. VOS (Pin 4): VOUT Offset Voltage Adjustment. This pin adjusts the starting VOUT voltage when no RF signal is present. For VOS from 0V to 120mV, VOUT is unaffected by VOS. For VOS > 120mV, VOUT is the sum of VOS plus the detected RF signal. VOUT (Pin 5): Detector Output. VCC (Pin 6): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors. W BLOCK DIAGRA RFSOURCE VCC 6 SD + BIAS BUFFER SHUTDOWN 500 RFIN 1 VOUT 4 VOS 30k 500 30k 180 100 SD 31k + 25pF RF DET 24k 50A GND 2 5 - + 80k - SD 50A - 80k 120mV + 160k 3 5531 BD SHDN 5531f 8 LTC5531 U W U U APPLICATIO S I FOR ATIO the input range of a variety of analog-to-digital converters. VOUT will not change until VOS exceeds 120mV. The voltage at VOUT for VOS 120mV and with no RF signal present is: Operation The LTC5531 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 7GHz. These functions include an internal frequency compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF input signal to DC and a delay circuit to avoid voltage transients at VOUT when powering up. The LTC5531 has both shutdown and voltage offset adjustment capabilities. VOUT = VOS VOUT will exactly track VOS above 120mV. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The Schottky diode is biased at about 55A and drives a 25pF internal peak detector capacitor. Buffer Amplifier The output buffer amplifier is capable of supplying typically 4mA into a load. The amplifier has a bandwidth of 2MHz and a fixed internal gain of two. The VOS input controls the DC input voltage to the buffer amplifier. VOS must be connected to ground if the DC output voltage is not to be changed. The buffer is initially trimmed to approximately 120mV with VOS connected to ground. Shutdown The part is in shutdown mode when SHDN is low. The supply current is reduced to < 2A and VOUT is shorted to ground via a 280 resistor. When SHDN is asserted high, the part is enabled after about 8s. The VOS pin is used to change the initial VOUT starting voltage. This function enables the LTC5531 output to span Demo Board Schematic VCC 2.7V TO 6V RFIN C4 39pF 1 R1 (OPT) 2 3 VCC SHDN 22k C1 0.1F LTC5531ES6 RFIN VCC GND VOUT SHDN VOS C2 100pF 6 5 4 VOS VOUT C3 (OPT) 5531 DB 5531f 9 LTC5531 U W U U APPLICATIO S I FOR ATIO Applications The LTC5531 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -32dBm to 10dBm for frequencies from 300MHz to 7GHz. Operation at higher frequencies is achievable. Consult factory for more information. The LTC5531 can be used as a demodulator for AM and ASK modulated signals with data rates up to 2MHz. Depending on specific application needs, the RSSI output can be split between two branches, providing AC-coupled 0.1F LTC5531ES6 1 2 3 DISABLE ENABLE RFIN VCC GND VOUT SHDN VOS data (or audio) output and DC-coupled RSSI output for signal strength measurements and AGC. The LTC5531 can be used for RF power detection and control. Figure 1 is an example of transmitter power control, using the LTC5531 with a capacitive tap to the power amplifier. A 0.5pF capacitor (C1) followed by a 200 resistor (R1) forms a coupling circuit with about 20dB loss at 900MHz referenced to the LTC5531 RF input pin. In the actual product implementation, component values for the capacitive tap may be different depending on parts placement, PCB parasitics and parameters of the antenna. Li-Ion Tx PA MODULE R1 200 1% C1 0.5pF 0.05pF CELL BAND 6 DIPLEXER 5 4 PCS BAND OFFSET ADJUSTMENT MOBILE PHONE DSP VPC BSE 5532 F01 Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap 5531f 10 LTC5531 U PACKAGE DESCRIPTIO S6 Package 6-Lead Plastic TSOT-23 (Reference LTC DWG # 05-08-1636) 0.62 MAX 2.90 BSC (NOTE 4) 0.95 REF 1.22 REF 3.85 MAX 2.62 REF 1.4 MIN 2.80 BSC 1.50 - 1.75 (NOTE 4) PIN ONE ID RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.30 - 0.45 6 PLCS (NOTE 3) 0.95 BSC 0.80 - 0.90 0.20 BSC 0.01 - 0.10 1.00 MAX DATUM `A' 0.30 - 0.50 REF 0.09 - 0.20 (NOTE 3) 1.90 BSC S6 TSOT-23 0302 NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. JEDEC PACKAGE REFERENCE IS MO-193 5531f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LTC5531 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS Infrastructure LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3, 50 Single Ended RF and LO Ports LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, 50 Single Ended RF and LO Ports LT5522 600MHz to 2.7GHz High Linearity Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50 Single-Ended RF and LO Ports RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC(R)5505 300MHz to 3GHz RF Power Detectors LTC5505-1: -28dBm to 18dBm Range, LTC5505-2: -32dBm to 12dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector -34dBm to 14dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector -32dBm to 12dBm Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset RF Building Blocks LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, -4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth LT5546 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply, -7dB to 56dB Linear Power Gain RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones 5531f 12 Linear Technology Corporation LT/TP 0104 1K * PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com LINEAR TECHNOLOGY CORPORATION 2004