Twin Diode Schottky Barrier Diode MS) OUTLINE D4SC6M Package : ITO-220 Unit: mm Weight 2.192 (Typ) yhaie 10 46 60V 4A Doce r = mere KO e Tj=150C @ Tj=150C me, Oo co ePrarsMm NS 1 fRaE Prrsm Rating Type No was S e J)LE-IVE Full Molded wrk 'D4SC6M ; Polariy LE Ges Sat i ] et vyF VIBE Switching Regulator II || eDC/DCIYI\-4 DC/DC Converter | | = oR. TL, OARS @ Home Appliance, Game, Office Automation | | tS. hY TILES Communication, Portable set OO Q@ CS WNIBMILOvs CLP ALI Webt4 b MIE Y4 A FAY OT FNAB) SHAPE Ss. FREUZEAR ITO Vs TISGREE Re CHERE FS. For details of the outline dimensions, refer to our web site or the diode technical data book. As for the marking, refer to the specification "Marking, Terminal Connection". Mew RATINGS @fextmATH Absolute Maximum Ratings GkO2 A Te =25T) a Odd ny | A fe Ha 2% Hie a . Item Symbol] Conditions Type No. D4SC6M Unit tetra yn 9 Storage Temperature Tstg 40~150 C anes : 4 Operation Junction Temperature T) 150 C vt A BEL AE Maximum Reverse Voltage Vem 60 Vv RD RLEARY TE Vv _ | 2U Allii0.5ms, duty 1/40 65 Vv Repetitive Peak Surge Reverse Voltage] YRRSM | Pulse width 0.5ms, duty 1/40 SOHz ERIK, HAW, 74 AS, (AD oe I IRF4) OMA BIC HI0/2, Tc = 138C 4 A Average Rectified Forward Current 0 50Hz sine wave, Resistance load, With heatsink, Per diode 1o/2, Tc=138C ab AUT YE ae Tr SOHz ESRI, JRO IKLIG 4 7 VAEA MAS, Tj = 125C 60 A Peak Surge Forward Current FSM | 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125C BOKL CAM Vw AWA MOUs, 1249, T]=25T Repetitive Peak Surge Reverse Power PrrsM | Pulse width 10s, Per diode, Tj=25C 330 WwW ssa I} AE . Hie 7 AT, AC 15y EWI Dielectric Strength Vdis Terminals to case, AC 1 minute 15 kV HON bv (HESE(4 : 0.3N-m) . Mounting Torque TOR (Recommended torque : 0.3N:m) 0.5 N-m aS . . . 9 BSA SANIT Electrical Characteristics (H##O 2A To =25T) MBC HE. . = AW AWE, FY OBE Forward Voltage Vr Ip = 2A, Pulse measurement, Per diode MAX 0.58 Vv TE = AW AWE, FY OBE Reverse Current Ir Vr=VrM, Pulse measurement, Per diode MAX 2 mA ReAe : - - IHF) OBUAIA Junction Capacitance Cj f= 1MHz, Vr=10V, Per diode TYP 120 pF PS . eB 7-AR on Thermal Resistance Ajc Junction to case MAX 3.3 C/W KARAB IL RAKROAMICSMU SE LCRRTSOCEPHSY ET, * All specifications are subject to change without notice. 88 (4533) www.shindengen.co.jp/product/semi/ Center Tap Common Cathode Mist) CHARACTERISTIC DIAGRAMS Twin SBD D4SC6M IBA vet Forward Voltage 50 20 10 S a an 2 S oO 2 Te=1 3 Oo ~| Te=150C(TYP) Pol Te= $ Te= 25C(TYP) 05 q& v Pulse measurement Per diode Ss Forward Voltage Vr (V) IBBABA HR Forward Power Dissipation Forward Power Dissipation Pr (W] Average Rectified Forward Current Io (A) CARES ints Peak Surge Forward Current Capability 100 Sine wave 80 110ms 10ms! es Icycle Non-repetitive Tj=125C 60 20 Peak Surge Forward Current IFsm {AJ 5 Number of Cycles [cycle] TA SE Reverse Current 1000 100 Te=150C(TYP S Tc= c= 100C (TYP Te= 75C(TYP Reverse Current Ir (mA] Ss Pulse measurement Per diode 0,01 Reverse Voltage Vr (V] WEAR AHR Reverse Power Dissipation Reverse Power Dissipation Pr (W] 20 Reverse Voltage Vr (VJ RABE Junction Capacitance 1000 f=1MHz Te= 25C TYP Per diode a Ss np S 100 50 Junction Capacitance Cj (pF) 5 Reverse Voltage Vr (VJ F4L-F4AYIN-T Te-lo Derating Curve Tc-lo 8 0 E-LA=-L- Io 8 VR hs 1 VR=30V P| D=tp/T T Average Rectified Forward Current Io (A) Case Temperature Te [C] RORLEARD LES ibs Repetitive Surge Reverse Power Derating Curve 120 8 itp | Pres = TeexVep 8 Pres Derating [%) gs 20 Operation Junction Temperature Tj (C) RORLEART VHS its Repetitive Surge Reverse Power Capability 10 10us) Pept Prrsm=IRPXVRP Ratio of Prrsm (tp) / Prrsm (tp Pulse Width tp (us) KARAB IL RAKROAMICSMU SE LCRRTSOCEPHSY ET, * All specifications are subject to change without notice. * Sine wave 1450Hz Cl LT ET. * 50Hz sine wave is used for measurements. ESE AEE OPEL IRAVIDNG PRO THU ET. Typical ately 2D SRL TWO ET. * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www. shindengen.co.jp/product/semi/ (J533) 89