2SK2084(L), 2SK2084(S) Silicon N-Channel MOS FET ADE-208-1342 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline DPAK-2 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK2084(L), 2SK2084(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 20 V Drain current ID 7 A 28 A 7 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 20 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 2 2SK2084(L), 2SK2084(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 20 -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current I DSS -- -- 100 A VDS = 16 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 0.04 0.053 ID = 4 A VGS = 10 V*1 -- 0.058 0.075 ID = 4 A VGS = 4 V*1 Forward transfer admittance |yfs| 5 9 -- S ID = 4 A VDS = 10 V*1 Input capacitance Ciss -- 800 -- pF VDS = 10 V Output capacitance Coss -- 680 -- pF VGS = 0 Reverse transfer capacitance Crss -- 165 -- pF f = 1 MHz Turn-on delay time t d(on) -- 15 -- ns ID = 4 A Rise time tr -- 60 -- ns VGS = 10 V Turn-off delay time t d(off) -- 100 -- ns RL = 5 Fall time tf -- 80 -- ns Body to drain diode forward voltage VDF -- 0.9 -- V I F = 7 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 80 -- ns I F = 7 A, VGS = 0, diF / dt = 20 A / s Note 1. Pulse Test 3 2SK2084(L), 2SK2084(S) Power vs. Temperature Derating Maximum Safe Operation Area I D (A) 50 30 30 Drain Current Channel Dissipation Pch (W) 40 20 10 100 s 3 1 50 100 150 0.1 0.3 200 Tc (C) Typical Output Characteristics 10 m s ms D (1 (T C O sh c = pe ot) Operation in r a 2 t 5 io this area is C) n limited by R DS(on) 10 30 V DS (V) 20 Pulse Test (A) 16 10 V 6V 4V 1 3 Drain to Source Voltage Typical Transfer Characteristics 20 16 V DS = 10 V Pulse Test ID 3.5 V 12 8 3V 4 0 VGS = 2.5 V 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current I D (A) = 1 Ta = 25 C Case Temperature Drain Current PW 10 0.3 0 4 10 s 12 8 Tc = 75 C 25 C -25 C 4 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2084(L), 2SK2084(S) Pulse Test 0.4 0.3 0.2 Static Drain to Source on State Resistance R DS(on) ( ) 2 4 6 Gate to Source Voltage 8 0.16 5A V GS = 4 V 0.04 10 V 0 -40 V GS = 4 V 10 V V GS (V) Pulse Test 0.08 0.1 0.01 0.1 0.2 10 Static Drain to Source on State Resistance vs. Temperature 0.20 0.12 Pulse Test 0.02 2A 1A 0 Static Drain to Source State Resistance vs. Drain Current 0.05 I D= 5 A 0.1 0.2 Drain to Source On State Resistance R DS(on) ( ) 0.5 1A 2A 1A 2A 5A 0 40 80 120 160 Case Temperature Tc (C) 0.5 1 2 5 10 Drain Current I D (A) 20 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 10 V DS = 10 V Pulse Test 5 Tc = -25 C 25 C 75 C 2 1 0.5 0.1 0.2 0.5 1 2 5 10 Drain Current I D (A) 5 2SK2084(L), 2SK2084(S) Typical Capacitance vs. Drain to Source Voltage Body to Drain Diode Reverse Recovery Time 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 200 100 50 di / dt = 20 A / s V GS = 0, Ta = 25 C 20 10 0.1 0 16 12 VDS 8 V DD = 20 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 16 20 4 0 40 t d(off) Switching Time t (ns) 30 12 200 V GS (V) VGS 8 Switching Characteristics 20 V DD = 20 V 10 V 5V 4 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage 6 Crss 10 40 0 100 VGS = 0 f = 1 MHz Dynamic Input Characteristics 10 Coss 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) 50 20 Ciss 1000 100 tf 50 20 10 0.1 V GS = 10 V V DD = 20 V PW = 5 s duty < 1 % 0.2 tr t d(on) 0.5 1 Drain Current 2 5 I D (A) 10 2SK2084(L), 2SK2084(S) Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current I DR (A) 20 Pulse Test 16 10 V 5V 12 V GS = 0, -5 V 8 4 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 0.3 0.1 0.03 D=1 0.5 0.2 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C 0.02 1 0.0 t ho lse PDM Pu 1s D= PW T PW T 0.01 10 100 1m 10 m Pulse Width 100 m 1 10 PW (S) 7 2SK2084(L), 2SK2084(S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 20 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK2084(L), 2SK2084(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 4.7 0.5 1.2 0.3 16.2 0.5 1.15 0.1 0.8 0.1 (0.7) 3.1 0.5 5.5 0.5 6.5 0.5 5.4 0.5 0.55 0.1 0.55 0.1 2.29 0.5 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(2) -- -- 0.42 g 9 2SK2084(L), 2SK2084(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) -- Conforms 0.28 g 2SK2084(L), 2SK2084(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) -- Conforms 0.28 g 11 2SK2084(L), 2SK2084(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12