MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL (M220) Epoxy Sealed DESCRIPTION: The MS2205 is a base emitter, silicon NPN, microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol PDISS VCE TJ IC T STG Parameter Power Dissipation Collector-Emitter Bias Voltage Junction Temperature Device Current Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance* Value 7.5 37 200 1.0 -65 to +200 35 Unit W V C A C C/W MSCXXXX.PDF 07-16-02 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2205 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 25 C) STATIC Symbol BVCBO BVCEO BVEBO ICES HFE Test Conditions IC = 1 mA IC = 5 mA IE = 1.0 mA VCE = 35 V VCE = 5 V DYNAMIC Symbol POUT GP Condition s IE = 0 mA IB = 0mA IC = 0 mA Test Conditions f =1025 - 1150 MHz PIN = 400mW VCE =35V f =1025 - 1150 MHz PIN = 400mW VCE =35V MSCXXXX.PDF 07-16-02 Max. Unit Min. Value Typ. Max. Unit 10 --- --- dB 45 20 3.5 --20 IC = 100 mA Pulse Width = 10 m s Duty Cycle = 1% Value Typ. Min. 4 ----------- --- ------1.0 120 --- V V V mA --- W MS2205 PACKAGE MECHANICAL DATA MSCXXXX.PDF 07-16-02