STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the
QM plan shall not affect the form, fit, or function as described herein.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be
conducted on all devices prior to qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in
the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be
maintained under document revision level control of the device manufacturer's Technology Review Board (TRB)
in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon
request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in
accordance with the intent specified in method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of
MIL-PRF-38535 permits alternate in-line control testing.
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted.
c. For device classes Q and V subgroups 7, 8A and 8B shall include verifying the functionality of the device.
d. O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which
may affect the performance of the device. For device classes Q and V, the procedures and circuits shall be
under the control of the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made
available to the preparing activity or acquiring activity upon request. Testing shall be on all pins, on five devices
with zero failures. Latch-up test shall be considered destructive. Information contained in JEDEC JESD78 may
be used for reference.
e. Subgroup 4 (CIN, COUT , and CDP measurements) shall be measured only for initial qualification and after any
process or design changes which may affect capacitance. Capacitance shall be measured between the
designated terminal and GND at a frequency of 1 MHz. Sample size is three devices with no failures, and all
input and output terminals tested.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA
herein.
4.4.2.1 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-
PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB
in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The
test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent
specified in method 1005 of MIL-STD-883.