A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
V(BR)DSS ID = 5.0 mA VGS = 0 V 65 V
IDSS VDSS = 28 V VGS = 0 V 1.0 mA
IGSS VGS = 40 V VDS = 0 V 1.0 µ
µµ
µA
VGS(th) VDS = 10 V ID = 10 mA 1.0 6.0 V
gfs VDS = 10 V ID = 100 mA 80 mmhos
Ciss
Coss
Crss
VDS = 28 V VGS = 0 V f = 1.0 MHz 7.0
9.7
2.3 pF
NF VDS = 28 V ID = 100 mA f = 400 MHz
ZS = 67.7+j = 14.1 ZL = 14.5+j = 25.7 3.0 dB
Gps
η
ηη
ηVDD = 28 V IDQ = 50 mA Pout = 5.0 W 11.0
45 13.5
50 dB
%
ψ
ψψ
ψVDD = 28 V IDQ = 50 mA Pout = 5.0 W
VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADRADATION IN OUTPUT POWER
SILICON N-CHANNEL RF POWER MOSFET
MRF161
DESCRIPTION:
The MRF161 is an Enhancement-
Mode N-Channel MOS Broadband RF
Power Transistor for Wideband Large
Signal Amplifier and Oscillat or
Applications f r om 2.0 to 400 MHz.
MAXIMUM RATINGS
ID900 mA
VDSS 65 V
VGS ±40 V
PDISS 17.5 W @ T C = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θ
θθ
θJC 10 OC/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 1 8 .5 4
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.18
.495 / 12.57 .505 / 12.83
.280 / 7.11
D
G
S
S
