1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
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01.11.2003
General Purpose Transistors BC 327 / BC 328
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 45 V BC 327 - ICES – 2 nA 100 nA
- VCE = 25 V BC 328 - ICES – 2 nA 100 nA
- VCE = 45 V, Tj = 125/C BC 327 - ICES – – 10 :A
- VCE = 25 V, Tj = 125/C BC 328 - ICES – – 10 :A
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
- IC = 10 mA BC 327 - V(BR)CES 20 V – –
BC 328 - V(BR)CES 45 V – –
- IC = 0.1 mA BC 327 - V(BR)CES 30 V – –
BC 328 - V(BR)CES 50 V – –
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
- IE = 0.1 mA - V(BR)EB0 5 V – –
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA - VCEsat – – 0.7 V
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 300 mA - VBE – – 1.2 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz fT– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 12 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC 337 / BC 338
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 327-16
BC 328-16
BC 327-25
BC 328-25
BC327-40
BC328-40