MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE CM75TL-24NF IC ..................................................................... 75A VCES ......................................................... 1200V Insulated Type 6-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm L A B E L 11 120 106 0.5 7 40.78 17 2-5.5 MOUNTING HOLES 17 12 13.62 UP VP 1 1 CN 55 35 WP N 12 23 12 23 32 12 23 23.2 12 22 11.75 (13.5) 12 12 (SCREWING DEPTH) +1 W 10.75 (19.75) 22 -0.5 B V 16 8 U 3 1 6-M5 NUTS 1 P A B Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P B CN-7 CN-8 N NC NC NC UP-1 UP-2 VP-1 VP-2 U CN-5 CN-6 WP-1 WP-2 W V CN-3 CN-4 CN-1 CN-2 CIRCUIT DIAGRAM Jun. 2004 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC = 87C*1 Pulse Ratings 1200 20 75 150 75 150 520 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 (Note 2) Pulse TC = 25C (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Unit V V A A A A W C C V N*m N*m g ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol Parameter Test conditions Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.2 -- 2.1 2.4 -- -- -- 338 -- -- -- -- -- 3 -- -- -- 0.085 -- 0.5 3.0 -- 11.5 1.0 0.23 -- 100 50 300 350 120 -- 3.8 0.24 0.36 -- 63 A VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance External gate resistance IC = 75A, VGE = 15V Tj = 25C Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V VCC = 600V, IC = 75A VGE1 = VGE2 = 15V RG = 4.2, Inductive load switching operation IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 mA V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. Jun. 2004 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 12 100 11 50 10 9 0 2 4 6 8 4 VGE = 15V 3 2 1 Tj = 25C Tj = 125C 0 10 0 50 100 150 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25C 8 6 4 IC = 150A IC = 75A 2 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25C 15 13 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V IC = 30A 0 6 8 10 12 14 16 18 7 5 3 2 102 7 5 3 2 101 20 101 7 5 3 2 Cies 100 7 5 3 2 2 3 4 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 10-1 1 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 7 5 3 2 7 5 3 2 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 7 5 3 2 Tj = 25C Tj = 125C GATE-EMITTER VOLTAGE VGE (V) Coes Cres VGE = 0V 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 150 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) td(off) tf 102 7 5 3 2 td(on) Conditions: 101 VCC = 600V tr 7 5 VGE = 15V G = 4.2 R 3 2 Tj = 125C Inductive load 100 0 10 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) Jun. 2004 MITSUBISHI IGBT MODULES CM75TL-24NF REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 Conditions: 5 VCC = 600V VGE = 15V 3 RG = 4.2 2 Tj = 25C Inductive load 102 7 5 Irr trr 3 2 101 0 10 2 3 5 7 101 2 3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 5 7 102 RECOVERY LOSS (mJ/pulse) 2 3 5 7 101 2 SWITCHING LOSS (mJ/pulse) 3 5 3 5 7 101 2 3 5 7 102 RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 7 5 3 2 Err Conditions: VCC = 600V VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 10-1 0 10 3 GATE RESISTANCE RG () 102 2 2 COLLECTOR CURRENT IC (A) 7 3 Esw(on) 2 101 5 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 Conditions: VCC = 600V 5 VGE = 15V 3 IC = 75A Tj = 125C 2 Inductive load C snubber at bus 1 10 Esw(off) 7 100 0 10 5 7 102 RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) Conditions: VCC = 600V Esw(on) VGE = 15V RG = 4.2 Tj = 125C Inductive load C snubber at bus 10-1 0 10 7 7 5 3 2 7 Esw(off) 100 10-2 102 2 2 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.24C/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.36C/W -3 10 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 3 3 7 5 3 2 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) 5 5 10-1 7 5 3 2 TIME (s) 7 7 2 10-1 EMITTER CURRENT IE (A) 101 100 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip 2 3 5 7 101 2 3 5 7 102 EMITTER CURRENT IE (A) Conditions: VCC = 600V VGE = 15V IE = 75A Tj = 125C Inductive load C snubber at bus 5 3 2 101 7 Err 5 3 2 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () Jun. 2004 MITSUBISHI IGBT MODULES CM75TL-24NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A VCC = 400V 16 VCC = 600V 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE QG (nC) Jun. 2004