JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation Maximum Ratings @Tamb=25 unless otherwise specified Characteristic Forward Voltage (Note 2) Symbol @ IF = 10mA Power Dissipation(Note 1) Value Unit VF 0.9 V Pd 300 mW Thermal Resistance, Junction to Ambient Air RJA 417 / W Operating and Storage Temperature Range Tj,TSTG -65 to +150 Electrical Characteristics @ T a m b = 25C unless otherwise specified Maximum Zener ZenerVoltage Range (Note 2) Type Number Impedance VZ@IZT IZT ZZT@IZT ZZK@IZK () Temperature Reverse Coefficent of Current (Note 3) Code Maximum Zener voltage @ IZT=5mA IZK IR mV/C VR Nom(V) Min(V) Max(V) (mA) (mA) (uA) (V) Min Max BZX84C2V4 Z11 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 BZX84C2V7 Z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 BZX84C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 BZX84C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 BZX84C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 BZX84C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 BZX84C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 BZX84C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 BZX84C5V1 Z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 BZX84C5V6 Z3 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 BZX84C6V2 Z4 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 BZX84C6V8 Z5 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 BZX84C7V5 Z6 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 BZX84C8V2 Z7 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 BZX84C9V1 Z8 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 BZX84C10 Z9 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 BZX84C11 Y1 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 BZX84C12 Y2 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 BZX84C13 Y3 13 12.4 14.1 5 30 170 1.0 0.1 8.0 BZX84C15 Y4 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 BZX84C16 Y5 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 BZX84C18 Y6 BZX84C20 Y7 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 BZX84C22 Y8 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 BZX84C24 Y9 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 BZX84C27 Y10 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 BZX84C30 Y11 BZX84C33 Y12 33 31.0 35.0 2 BZX84C36 Y13 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 BZX84C39 Y14 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 Notes: 18 30 16.8 28.0 19.1 32.0 5 2 45 80 80 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, period=5ms,pulse width =300us. 3. f = 1KHZ 225 300 325 1.0 0.5 0.5 0.1 0.1 0.1 12.6 21.0 23.1 7.0 12.4 24.4 27.4 11.0 16.0 29.4 33.4 BZX84C2V4-BZX84C39 Typical Characteristics 500 50 Tj = 25C C2V7 C3V9 C4V7 C6V8 40 400 IZ, ZENER CURRENT (mA) Pd, POWER DISSIPATION (mW) C3V3 C5V6 300 Note 1 Note 3 200 C8V2 C9V1 30 20 Test Current IZ 5.0mA 10 100 0 0 100 0 200 0 TA, Ambient Temperature, (C) Fig. 1 Power Derating Curve 30 Tj = 25C 1 2 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics 1000 C10 Tj = 25C CT, TOTAL CAPACITANCE (pF) IZ, ZENER CURRENT (mA) C12 C15 20 C18 Test current IZ 2mA C22 10 Test current IZ 5mA C27 C33 VR = 1V VR = 2V 100 VR = 1V VR = 2V C36 C39 10 1 0 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 40 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 4 Total Capacitance vs Nominal Zener Voltage 10