Individual Specification
36
AN48840B
Low current consumption, high sensitivity CMOS Hall IC
Alternating magnetic field operation (For
low-speed rotation detection)
■ Overview
The AN48840B is a Hall IC (a magnetic sensor) which has 2 times
or more sensitivity and a low current consumption of about one fiftieth
compared with our conventional one.
In this Hall IC, a Hall element, a offset cancel circuit, an amplifier
circuit, a sample and hold circuit, a Schmidt circuit, and output stage
FET are integrated on a single chip housed in a small package by IC
technique.
■ Features
High sensitivity (6 mT max.) due to offset cancel circuit and a new
sample and hold circuit
Small current by using intermittent action
(Average supply current: 56 µA typ., Sampling period: 670 µs typ.)
Small package (SMD)
CMOS inverter output (logic output form)
■ Applications
Functional operation key, Mouse,
Appliances for low-speed rotation detection
■ Block Diagram
CLK
4
2
GND
5Out
VCC
3 1
N.C. N.C.
On/Off control
Hall
element Switch
Amplifier
Sample
hold
■ Pin Descriptions
Pin No. Symbol Description Pin No. Symbol Description
1N.C. 4VCC Power supply
2GND Ground 5Out Output
3N.C.
Unit : mm
SMINI-5DA (Lead-free package)
4
3
5
1 2
3
4
21
5
0.225
0.225
2.10±0.10
1.65±0.10
1.30±0.10
Seating plane
0.80±0.10
0 to 0.10
0.32
±
0.10
2.00±0.10
0.22+0.10
−0.05
0.11+0.10
−0.05
0.65 0.65
M
0.13
0.10
S
N
HL L H
Magnetic
flux density
AN48840B
output level
AN48840B
37
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply voltage VCC 5V
Output voltage VOUT 5V
Supply current ICC 5mA
Output current IOUT 15 mA
Power dissipation *1, *2PD60 mW
Operating ambient temperature *1Topr −25 to +75 °C
Storage temperature *1Tstg −55 to +125 °C
Note) *1: Except for the power dissipation, operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: Ta = 75°C. For the independent IC without a heat sink. Please use within the range of power dissipation, refering to PD Ta curve.
■ Recommended Operating Range
Parameter Symbol Range Unit
Supply voltage VCC 2.5 to 3.5V
■ Electrical Characteristics Ta = 25°C ± 2°C
Parameter Symbol Conditions Min Typ Max Unit
Operating magnetic flux density 1
*1BHL VCC = 3 V, VCC = 2.5 V 0.56mT
Operating magnetic flux density 2
*2BLH VCC = 3 V, VCC = 2.5 V −6 − 0.5mT
Output voltage 1VOL1VCC = 3 V, IO = 2 mA, B = 6.0 mT 0.1 0.3V
Output voltage 1VOL2VCC = 2.5 V, IO = 2 mA, B = 6.0 mT 0.1 0.3V
Output voltage 2VOH1VCC = 3 V, IO = −2 mA, B = −6.0 mT 2.7 2.9V
Output voltage 2VOH2VCC = 2.5 V, IO = −2 mA, B = −6.0 mT 2.7 2.9V
Supply current 1 *3ICCAVE VCC = 3 V 56.0 85.0µA
Supply current 2 *3ICC2AVE VCC = 2.5 V 48.0 72.0µA
Intermittent action time Tsam VCC = 3 V 490 670 850 µS
Intermittent action time 2Tsam2VCC = 2.5 V 513 710 890 µS
Note) *1: Symbol BH-LS , BH-LN stands for the operating magnetic flux density where its output level varies from high to low.
*2: Symbol BL-HS , BL-HN stands for the operating magnetic flux density where its output level varies from low to high.
*3: ICCAVE = {ICCON × tON + ICCOFF × tOFF}/{tON + tOFF}
Design reference data
Parameter Symbol Conditions Min Typ Max Unit
Hysteresis width BW VCC = 3 V 7mT
Supply current 3ICCON VCC = 3 V 1.4 2.1mA
Supply current 4ICCOFF VCC = 3 V 2.5 µA
Supply current 5ICC2ON VCC = 2.5 V 1.12 1.68 mA
Supply current 6ICC2OFF VCC = 2.5 V 2.2 µA
Operating time tON Ta = −25°C to 75°C, VCC = 3 V 10 26 42 µS
Stop time tOFF Ta = −25°C to 75°C, VCC = 3 V 258 644 1 030 µS
Operating time 2t2ON Ta = −25°C to 75°C, VCC = 2.5 V 11 27 43 µS
Stop time 2t2OFF Ta = −25°C to 75°C, VCC = 2.5 V 270 674 1 078 µS
Note) It will operate normally in approximately 0.67 ms after power on.
Individual Specification
38
■ Technical Data
Position of a Hall element (unit in mm)
Distance from a package surface to sensor part: 0.31 mm (reference value)
A Hall element is placed on the shaded part in the figure.
0.31
1.0
1.0
Magneto-electro conversion characteristics
BW
BHL
BLH
S
N
Output voltage
Direction of applied magnetic field Operating magnetic flux density
Applied magnetic flux density B
Power dissipation of package SMINI-5DA
PD Ta
200
0 25 15050 75 100 125
0
25
50
75
100
125
150
175
AN48840B_PD-Ta
Ambient temperature Ta (°C)
Power dissipation PD (mW)
Independent IC
without a heat sink
Rth(j-a) = 833.3°C/W
PD = 120 mW (25°C)
−6.0
−4.0
2.0
0
−2.0
4.0
6.0
1 3 42
5
AN48840B_Tokusei02
Supply voltage VCC (V)
Operating magnetic flux density B (mT)
Ta = 25°C
Sample 1 BH-L
Sample 2 BH-L
Sample 1 BL-H
Sample 2 BL-H
Main characterisitcs
Operating magnetic flux density Supply voltage
AN48840B
39
■ Technical Data (continued)
Main characterisitcs (continued)
Operating magnetic flux density Ambient temperature Hysteresis width Supply voltage
6.5
6.0
5.5
5.0
7.0
8.0
8.5
9.0
9.5
10.0
7.5
1 3 42 5
Hesteresis width BW (mT)
AN48840B_Tokusei04
Supply voltage VCC (V)
Ta = 25°C
Sample 1 BW
Sample 2 BW
Supply current Supply voltage Low-level output voltage Supply voltage
0
20
40
60
50
30
10
80
90
70
100
2 41 3 5
AN48840B_Tokusei05
Supply voltage VCC (V)
Supply current ICC (µA)
Output = High
−35°C
85°C
25°C
0.00
0.02
0.01
0.025
0.015
0.005
0.03
0.035
AN48840B_Tokusei06
2 41 3 5 6
Supply voltage VCC (V)
Low-level output voltage VOL (V)
IO = 2 mA
125
°C
25°C
−50°C
∆ high-level output voltage Supply voltage Sampling period Supply voltage
0.06
0.055
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
AN48840B_Tokusei07
2 41 3 5
6
∆ hgh-level output voltage ∆VOH (V)
Supply voltage VCC (V)
125°C
25°C
−50°C
I
O = −2 mA
1
000
900
800
700
600
500
400
300
Sampling period TS (ms)
AN48840B_Tokusei08
2 41 3
5
Supply voltage VCC (V)
85°C
25°C
−35°C
V
CC = 3 V