VUO105-18NO7
3~ Rectifier Bridge
Standard Rectifier Module
-
~ +~ ~
Part number
VUO105-18NO7
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
PWS-C
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
RRM
1800
I120
FSM
1500
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130612aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO105-18NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.09
R0.8 K/W
R
min.
120
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
105
P
tot
155 WT = 25°C
C
RK/W
40
1800
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.38
T = 25°C
VJ
150
V
F0
V0.78T = °C
VJ
150
r
F
4.8 mΩ
V1.00T = °C
VJ
I = A
F
V
40
1.36
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1800
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
58
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
1.50
1.62
8.13
7.87
kA
kA
kA
kA
1.28
1.38
11.3
10.9
1800
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1900
0.30
IXYS reserves the right to change limits, conditions and dimensions. 20130612aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO105-18NO7
Ratings
XXXX-XXXX YYCW Lot#
Made in Germany Circuit
Diagram
Product
Number
Date Code
Package
T
VJ
°C
M
D
Nm5.75
mounting torque 4.25
T
stg
°C125
storage temperature -40
Weight g250
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm5.75
terminal torque 4.25
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
26.0
14.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
PWS-C
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO105-18NO7 456756Box 10VUO105-18NO7Standard
2500
3000
ISOL
threshold voltage V0.78
mΩ
V
0 max
R
0 max
slope resistance * 3.6
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130612aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO105-18NO7
67
20 13.5
9
10
50 8.5
M5
10
5.5
10.6
28
50
11
1
27.5
29
31
2
1.5
6.5
-
~ +~ ~
Outlines PWS-C
IXYS reserves the right to change limits, conditions and dimensions. 20130612aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO105-18NO7
011
2000
4000
6000
8000
10000
12000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6
0
40
80
120
160
200
10
-3
10
-2
10
-1
10
0
600
700
800
900
1000
1100
1200
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
0 25 50 75 100 125 1500 1020304050
0
10
20
30
40
50
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
F(AV)M
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Fig. 1 Forward current versus
voltagedropperdiode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.100 0.020
2 0.014 0.010
3 0.192 0.225
4 0.281 0.800
5 0.213 0.580
0.8 x V RRM
50 Hz
T
VJ
=25°C
T
VJ
=45°C T
VJ
=45°C
V
R
= 0 V
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=150°C
T
VJ
=150°C
T
VJ
=
125°C
150°C
R
thJA
:
0.2 KW
0.4 KW
0.6 KW
0.8 KW
1.0 KW
2.0 KW
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130612aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
