VUO105-18NO7 3~ Rectifier Standard Rectifier Module VRRM = 1800 V I DAV = 120 A I FSM = 1500 A 3~ Rectifier Bridge Part number VUO105-18NO7 - ~ ~ ~ + Features / Advantages: Applications: Package: PWS-C Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Easy to mount with two screws Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130612a VUO105-18NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1800 V IR reverse current VR = 1800 V TVJ = 25C 100 A VR = 1800 V TVJ = 150C 2 mA TVJ = 25C 1.09 V 1.38 V 1.00 V VF IF = forward voltage drop min. 40 A typ. I F = 120 A IF = TVJ = 125 C 40 A I F = 120 A TC = 105C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 120 A TVJ = 150 C 0.78 V d= for power loss calculation only Ptot 1.36 T VJ = 150 C 4.8 m 0.8 K/W K/W 0.30 TC = 25C 155 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.50 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.62 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 1.28 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.38 kA t = 10 ms; (50 Hz), sine TVJ = 45C 11.3 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 10.9 kAs TVJ = 150 C 8.13 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 7.87 kAs 58 pF 20130612a VUO105-18NO7 Package Ratings PWS-C Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 150 Unit A -40 125 C -40 150 C Weight typ. 250 MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 5.75 4.25 5.75 Nm Nm 26.0 mm terminal to backside 14.0 mm 3000 V 2500 V 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram Made in Germany Product Number 4.25 terminal to terminal t = 1 second isolation voltage g XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number VUO105-18NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO105-18NO7 * on die level Delivery Mode Box Code No. 456756 T VJ = 150 C Rectifier V 0 max threshold voltage 0.78 V R 0 max slope resistance * 3.6 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130612a VUO105-18NO7 29 31 6.5 27.5 2 Outlines PWS-C 1.5 1 20 13.5 50 28 10.6 5.5 10 11 9 10 67 M5 50 8.5 - IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved ~ ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130612a VUO105-18NO7 Rectifier 200 50 Hz 0.8 x V RRM 1200 160 12000 VR = 0 V 10000 1100 2 It 1000 IF 120 8000 TVJ = 45C IFSM 900 [A] 80 40 TVJ = 150C 800 TVJ = 150C 4000 700 TVJ = 25C 0 0.4 0.8 1.2 600 10-3 1.6 2000 10-2 10-1 100 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current vs. time per diode Fig. 3 I t versus time per diode 40 Ptot 30 2 140 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 50 [W] 6000 [A] TVJ = 125C 150C TVJ = 45C [A2s] DC = 0.2 KW 0.5 0.6 KW 0.8 KW 1.0 KW 2.0 KW 1 120 0.4 KW 0.4 100 IF(AV)M [A] 0.33 80 0.17 0.08 60 20 40 10 20 0 0 0 10 20 30 40 50 0 25 50 75 100 125 0 150 25 50 TA [C] IF(AV)M [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.8 Constants for ZthJC calculation: 0.6 ZthJC 0.4 [K/W] 0.2 i Rth (K/W) 1 0.100 0.020 2 0.014 0.010 3 0.192 0.225 4 0.281 0.800 5 0.213 0.580 ti (s) 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130612a