TB6612FNG Toshiba Bi-CD Integrated Circuit Silicon Monolithic TB6612FNG Driver IC for Dual DC motor TB6612FNG is a driver IC for DC motor with output transistor in LD MOS structure with low ON-resistor. Two input signals, IN1 and IN2, can choose one of four modes such as CW, CCW, short brake, and stop mode. Features * Power supply voltage: VM = 15 V(Max) * Output current: IOUT = 1.2 A(ave)/3.2 A (peak) * Output low ON resistor: 0.5 (upper+lower Typ. @ VM 5 V) * Standby (Power save) system * CW/CCW/short brake/stop function modes * Built-in thermal shutdown circuit and low voltage detecting circuit * Small faced package(SSOP24: 0.65 mm Lead pitch) * This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at reasonable levels. Weight: 0.14 g (typ.) 1 2012-11-01 TB6612FNG Block Diagram Pin Functions No. Pin Name 1 AO1 2 AO1 3 PGND1 4 PGND1 5 AO2 6 AO2 7 BO2 8 BO2 9 PGND2 10 PGND2 I/O Function O ch A output 1 Power GND 1 O ch A output 2 O ch B output 2 Power GND 2 O ch B output 1 Motor supply 11 BO1 12 BO1 13 VM2 14 VM3 15 PWMB I ch B PWM input/200 k pull-down at internal 16 BIN2 I ch B input 2/200 k pull-down at internal 17 BIN1 I 18 GND 19 STBY I 20 Vcc 21 AIN1 I 22 AIN2 I ch A input 2/200 k pull-down at internal 23 PWMA I ch A PWM input/200 k pull-down at internal 24 VM1 ch B input 1/200 k pull-down at internal Small signal GND "L" = standby/200 k pull-down at internal Small signal supply ch A input 1/200 k pull-down at internal Motor supply 2 2012-11-01 TB6612FNG Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Remarks VM 15 VCC 6 Input voltage VIN -0.2 to 6 V IN1,IN2,STBY,PWM pins Output voltage VOUT 15 V O1,O2 pins IOUT 1.2 Supply voltage Output current Per 1 ch A 2 IOUT (peak) Power dissipation V 3.2 tw = 10 ms Single pulse 0.78 IC only 0.89 PD tw = 20 ms Continuous pulse, Duty 20% W 1.36 50 mm x 50 mm t = 1.6 mm Cu 40% in PCB mounting 76.2 mm x 114.3 mm t = 1.6 mm Cu 30% in PCB monting Operating temperature Topr -20 to 85 C Storage temperature Tstg -55 to 150 C Operating Range (Ta = -20 to 85C) Characteristics Supply voltage Output current (H-SW) Symbol Min Typ. Max Unit VCC 2.7 3 5.5 V VM 2.5 5 13.5 V 1.0 IOUT Switching frequency fPWM 0.4 100 Input pin: ; IN1,IN2,PWM,STBY Remarks VM 4.5 V A 4.5 V > VM 2.5 V Without PWM Operation kHz Output O2 pin: ; O1, O1,O2 VM VM Vcc Input O1 O1 O2 O2 200k Internal circuit GND PGND 3 2012-11-01 TB6612FNG H-SW Control Function Input Output IN1 IN2 PWM STBY OUT1 OUT2 Mode H H H/L H L L Short brake L H H H L H CCW L H L L Short brake H L H H H L CW L H L L Short brake L L H H H/L H/L H/L L OFF Stop (High impedance) OFF Standby (High impedance) H-SW Operating Description To prevent penetrating current, dead time t2 and t4 is provided in switching to each mode in the IC. VM OUT1 M VM OUT1 OUT2 OUT2 M GND OUT1 M OUT2 GND GND t2 t1 t3 VM OUT1 VM VM OUT2 M OUT1 M GND OUT2 GND t4 t5 VM t5 t1 OUT1 Voltage wave t3 GND t4 t2 4 2012-11-01 TB6612FNG Electrical Characteristics (unless otherwise specified, Ta = 25C, Vcc = 3 V, VM = 5 V) Characteristics Symbol ICC(3 V) Supply current ICC(5.5 V) ICC(STB) IM(STB) VIH Control input voltage VIL Control input current Standby input voltage Standby input current Output saturating voltage Low voltage detecting voltage Recovering voltage Thermal shutdown circuit operating temperature Thermal shutdown hysteresis VM = 5 V VM = 5 V STBY = 0 V Typ. Max 1.1 1.8 1.5 2.2 1 Vccx0.7 -0.2 Vcc+0.2 Vccx0.3 VIN = 3 V 5 15 25 VIN = 0 V 1 Vcc+0.2 VIL(STB) Vccx0.7 -0.2 Vccx0.3 IIH(STB) VIN = 3 V 5 15 25 IIL(STB) VIN = 0 V 1 Vsat(U+L)1 IO = 1 A, Vcc = VM = 5 V Vsat(U+L)2 IO = 0.3 A, Vcc = 0.5 0.7 0.15 0.21 1 IL(U) VM = VOUT = 15 V IL(L) VM = 15 V, VOUT = 0 V -1 IF = 1A 1 1.1 1 1.1 1.9 2.2 41 230 175 20 VF(U) VF(L) UVLD VM = 5 V (Design target only) UVLC (Design target only tf Dead H to L Penetration protect time time L to H (Design target only) TSD 24 50 5 mA V A V A V A V V ns C (Design target only) TSD Unit A 1 IIL tr Response speed STBY = Vcc = 3 V, STBY = Vcc = 5.5 V, Min IIH VIH(STB) Output leakage current Regenerative diode VF Test Condition 2012-11-01 TB6612FNG Target characteristics PD-- Ta PD Ta ICICj-a=160/W only j - a = 160C/W In boarding 50x50x1.6mm PCB PCB area 50 mmx50 mmx1.6 mm Cu40% Cu area 40% In boarding PCB 76.2x114.3x1.6mm PCB area 76.2 mmx114.3 mmx1.6 mm Cu30% Cu area 30% Power dissipation PD 1.00 0.50 2.5 IOUT 1.50 Iout IOUT-- Duty Duty (A) 2.0 Single-channel 1 ch driving operation 1ch 1.5 Output current (w) Dual-channel operation 2ch 2 ch driving 1.0 0.5 Ta 25C,IC IConly only Ta ==25C, Ta=25,IC 0.0 0.00 0 50 100 Ta () 0% 150 6 20% 40% Duty 60% 80% 100% 2012-11-01 TB6612FNG Typical Application Diagram +2.7 V +2.7V to 5.5 V 5.5V Vcc C4 0.1uF + C3 10uF STBY 20 UVLO 19 STBY 24 AIN1 21 1 2 AIN2 PWMA 22 Control Logic A H-SW Driver A 23 5 6 3 MCU 4 TSD 13 BIN1 17 14 11 BIN2 PWMB 16 Control Logic B H-SW Driver B 12 7 8 15 9 10 GND Note: VM1 AO1 C2 AO1 0.1uF AO2 + C1 10uF +4.5 V +4.5V to 13.5 V 13.5V M AO2 PGND1 PGND1 VM2 VM3 BO1 BO1 BO2 M BO2 PGND2 PGND2 18 Condensers for noise absorption (C1, C2, C3, and C4) should be connected as close as possible to the IC. 7 2012-11-01 TB6612FNG Package Dimennsions Detail of a terminal Weght: 0.14 g (typ) 8 2012-11-01 TB6612FNG Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. 5. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on handling of ICs [1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. [2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. [3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. [4] Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. 9 2012-11-01 TB6612FNG Points to remember on handling of ICs (1) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (2) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (3) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor's power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device's motor power supply and output pins might be exposed to conditions beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 10 2012-11-01 TB6612FNG RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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