HZS Series Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply Features * Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. * Wide spectrum from 1.5V through 38V of zener voltage provide flexible application. * Suitable for 5mm-pitch high speed automatic insertion. Outline Type No. Ordering Information Cathode band Type No. Mark Package Code 4. Cathode HZS Series Type No. MHD 2, Anode Absolute Maximum Ratings (Ta = 25C) item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 C Storage temperature T stg ~55 to +175 C Electrical Characteristics (Ta = 25C) Zener Voltage Reverse Current Dynamic Resistance Vz (V)* CSndition Ip(wA) Condition tg (Q) CStaition Type Grade Min Max = 1z (mA) Max Ve (V) Max fz (mA) HZS1 C3 1.5 17 5 25 0.5 100 5 HZS2 Al 1.6 1.8 5 25 0.5 100 5 A2 1.7 1.9 A3 1.8 2.0 B1 1.9 2.1 5 5 0.5 100 5 B2 2.0 2.2 B3 2.1 2.3 * Tested with DC. 185HZS Series Zener Voltage Reverse Current Dynamic Resistance Vz (V)* Condition Ip (uA) Condition rg (2) EShdition Type Grade Min Max iz (mA) Max Ve (V) Max b (mA) HZS2 C1 2.2 2.4 ; 5 5 0.5 100 5 C2 23 2.5 C3 2.4 2.6 HZS3 Al 25 2.7 5 5 0.5 100 5 A2 2.6 2.8 A3 2.7 29 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4 C3 3.3 3.5 HZS4 Al 3.4 3.6 5 5 1.0 100 5 A2 3.5 3.7 A3 3.6 3.8 Bi 3.7 3.9 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 43 C3 4.2 4.4 HZS5 Al 4.3 45 5 5 1.5 100 5 A2 4.4 4.6 A3 45 47 Bi 46 4.8 B2 4.7 4.9 B3 48 5.0 Ci 49 5.1 C2 5.0 5.2 C3 5.1 .3 HZS6 Al 5.2 5.5 5 5 2.0 40 5 A2 5.3 5.6 A3 5.4 5.7 * Tested with DC. 186HZS Series Zener Voltage Reverse Current Dynamic Resistance Vz (V)* ettaition In (HA) Bttaition rg (Q) Btaition Type Grade Min. = Max iz(mA) Max__Va(V) Max iz (mA) HZS6 B1 .5 5.8 5 5 2.0 40 5 B2 5.6 .9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3 C3 6.1 6.4 HZS7 Al 6.3 6.6 5 1 3.5 15 5 A2 6.4 6.7 A3 6.6 6.9 Bi 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3 C1 7.2 7.6 C2 7.3 7.7 C3 75 7.9 HZS9 At 77 8.1 5 1 5.0 20 5 A2 7.9 8.3 A3 8.1 8.5 Bt 8.3 8.7 B2 8.5 8.9 B3 8.7 9.1 C1 8.9 9.3 C2 9.1 9.5 C3 9.3 9.7 HZS11 Al 9.5 9.9 5 1 7.5 25 5 A2 9.7 10.1 A3 9.9 10.3 B1 10.2 10.6 B2 10.4 10.8 B3 10.7 11.1 Ci 10.9 11.3 C2 11.1 11.6 C3 11.4 11.9 * Tested with DC. 187HZS Series Zener Voltage Reverse Current Dynamic Resistance Vz (}* Eitaition Ip (HA) Eaition tg (Q) Station Type Grade Min Max by (mA) Max Vp (V) Max by (mA) HZS12 Al 11.6 12.1 5 1 9.5 35 5 A2 11.9 12.4 A3 12.2 12.7 Bi 12.4 12.9 B2 12.6 13.1 B3 12.9 13.4 C1 13.2 13.7 C2 13.5 14.0 C3 13.8 14.3 HZS15 1 14.1 14.7 5 1 11.0 40 5 2 14.5 15.1 3 14.9 15.5 HZS16 1 15.3 15.9 5 1 12.0 45 5 2 15.7 16.5 3 16.3 17.1 HZS18 1 16.9 17.7 5 1 13.0 55 5 2 17.5 18.3 3 18.1 19.0 HZS20 1 18.8 19.7 2 1 15.0 60 2 2 19.5 20.4 3 20.2 21.1 HZS22 1 20.9 21.9 2 1 17.0 65 2 2 21.6 22.6 3 22.3 23.3 HZS24 1 22.9 24.0 2 1 19.0 70 2 2 23.6 24.7 3 24.3 25.5 HZS27 1 25.2 26.6 2 1 21.0 80 2 2 262 27.6 3 27.2 28.6 H2ZS30 1 28.2 296 2 1 230 100 2 2 29.2 30.6 3 30.2 31.6 " Tested with DC. 188HZS Series Zener Voltage Reverse Current Dynamic Resistance Vz (V)* Eitaition Ip (WA) EStuition Tg (Q) EF aition Type Grade Min Max Iz (mA) Max Vr (V) Max lz (mA) HZS33 1 31.2 32.6 2 1 25.0 120 2 2 32.2 33.6 3 33.2 346 HZS36 1 34.2 35.7 2 1 27.0 140 2 2 35.3 36.8 3 36.4 38.0 * Tested with DC. Note: Type No. is as follows; HZS2B1, HZS2B2, HZS36-3. Zener Current !, (mA) 4 8 12 16 20 24 28 32 36 40 Zener Voltage V7 (V) Fig.1 Zener current Vs. Zener voltage 189HZS Series Temperature Coefficient y, (%/C) Zener Voltage 0.10 50 0.08 0 Q 0.06 9 =F 0.04 200 0.02 io 68 2 0 0 o Oo 0.02 -10 25 oR] > 5 0.04 -20 52 ce @@ ~0.06 -30 Nr- 0.08 40 ~0.10 -50 0 5 10 15 20 25 30 35 40 Zener Voltage Vz (V) Fig.2 Temperature Coefficient Vs. Zener voltage Power Dissipation Py (mW) 500 400 300 200 100 es Printed circuit board 100x180 x1.6t mm Quality: paper phenol \ M4 l=5 mm AY a i=10 mm ! | (Publication value) IN or 50 100 150 200 Ambient Temperature Ta (C) Fig.3 Power Dissipation Vs. Ambient Temperature 190