SILICON SIGNAL DIODES 100 MA TYPES BV lm @ 25C Max. Ve Max. Co ter Package Package (1SEC) Outline Outline Number Part Number @ 100LA @ DV Min. (V) tray |] @ Va) (Vv) | @tr ima) PF 1N914 25 30 1INS14A 25 20 1N914B 25 20 1N916 25 20 1IN916A 25 20 1N916B 25 20 1N4148* 25 20 1N4149 25 20 1N4151 50 50 1N4152 50 30 1N4153* 50 50 1N4154 25 1N4305 50 1N4444 50 1N4446 20 1N4447 20 1N4448 20 1N4449 20 1N4454* 50 1N4531* 20 1N4532 50 1N4533 30 1N4534 50 1N4536 25 4N4727 20 1N4863 50 DA1701 30 DA1702 30 DA1703 30 DA1704 20 MA1701 30 MA1702 30 MA1703 30 D034 MA1704 20 0034 D2800 2 DO35 DZ805 12 D035 Dz806 22 D035 pb DO35 0035 0035 D035 D035 DO35 DO35 D035 D035 D035 D035 DO35 D035 D035 DO35 DO35 DO35 DO35 DO35 D034 D034 D034 D034 D034 D035 D035 D035 DO35 D035 D035 D034 D034 WINF]HLAPOWlM/]/] MBE ININ IN BIN [MOLE IN TEIN TINO TRIN [M(B ID [OLD RLS DE104 . DO35 DE110 D035 DE111 a DO35 DE112 ol D035 DE113 a D035 DE114 D035 DE115 DO35 * JAN and JANT X types available 1 Measured at 5LLA 119Silicon Diodes This family of General Electric silicon signal diodes are very high speed switching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc- ture. This structure makes possible a diode having high conductance, fast recovery time, low leakage, and low capacitance combined with improved uni- formity and reliability. These diodes are contained in two different packages; | _1N4154 SEE PAGE 205 | = |r 1N4151,2,3 1N4454 | 1N4592,5,4 double heat sink miniature package and milli-heat sink package and are electrically the same as their YO equivalent types in each of the different packages. a (see page two for groupings of electrically equivalent types in each of the packages). PLANAR EPITAXIAL PASSIVATED with Controlled Conductance MILLI-HEATSINK DIODE (MHD) DOUBLE HEATSINK DIODE (DHD) 1N4532-1N4534 Bs IN4151-1N4153 . 1N4454 i j . | 55 pa Lesa - sis t | 2504 1 250 ae were Sao a 250 | 2 | 0.180 ee a tay co 0.060 pe cs 0075 fms oO Pag ie r nh 032 4.602 par! } 032.002 DIA CATHODE eny/ CATHODE END/ WOTE: ALL DIMENSIONS IN INCHES NOTE: ALL DIMENSIONS IN INCHES Dissipation: 500mW @ 25C free air Derate: 2.85mW/C for temp. above 25C amb. based on max. Ty; = 200C Dissipation: 500mMW @ 25C free air Derate: 2.85mW/C for temp. above 25C amb. based on max. T; = 200C | wnarst | 1N4152 TN4454 FEATURES wnoerel _N4532) 1) 4 Reverse Recovery Time of 4 nanoseconds maximum e e Min.-Max. Ve specified at 6 Forward Current Levels Capacitance of 2 pF maximum e Power Dissipation te 500 mW e e Power Dissipation to 250 mW Meets all MIL-S-19500 requirements e 6 Figure } | HEATSINK. oe SPACING STEADY STATE FROM END THERMAL OF DIODE RESISTANCE BODY C fw ae MHD DHD | MHD DHD .062 .230 .250 760 700 .250 319 319 550 550 500 .380 .380 460 460 *See Figure 5 for thermal resistance for short pulses. {This power rating is based on a maximum junction temperature of 200C. 262absolute maximum rati NQgs: (25C) (unless otherwise specified) 1N4151, 2, 3 1N4454 1N4532, 3, 4 1N4454 1N4151 1N4152 IN4153 DHD 1N4532 MHD618 1N4533 1N4534 MHD Voltage Reverse 50 50 30 50 Volts MHD & DHD Units Current Average Rectified 150 mA Recurrent Peak Forward 450 mA Forward Steady State DC 200 mA Peak Forward Surge (1 usec. pulse) 2000 mA Power Dissipation 500 Temperature Operating +___ 65 to --200 C Storage + _65 to 4200 + C electrical characteristics: (25C) (unless otherwise specified) 1N4454* IN4151 1N4152 IN4153 1N4532 MHD618 1N4533 1N4534 Breakdown Voltage Min. Max. Min. Max. Min. Max. Min. Max. (In = 5pA) By 15 15 40 15 Volts Forward Voltage (Ir = 100A) Vr 0.490 0.550 0.490 0.550 Volts (Iz = 250nA) Vr 0.530 0.590 0.530 0.590 Volts (Iy = 1mA) Vr 0.590 0.670 0.590 0.670 Volts (ly = 2mA) Vr 0.620 0.700 0.620 0.700 Volts (Ir = 10mA) Ver 1.00 0.700 0.810 0.700 0.810 Volts (Iv = 20mA) Vr 0.740 0.880 0.740 0.880 Volts (Ip = 5OmA) Vr 1.00 Volts Reverse Current (Ve= 30V) Ik 50 nA (Va= 30V, Ta = +150C) Tk 50 vA (Vr = 50V) Iz 100 50 50 nA (Vr = 50V, Ts = +150C) I; 100 50 50 BA Reverse Recovery Time (Ip = In = 10mA, I,, = 1mA, Figs. 9 & 10) ter 4 4 4 4 nsec, (Ir = 10mA, Vr= 6V, I= imA, Ri = 100 ohms, Figs. 9 & 10) tre 2 2 2 2 nsec. Peak Forward Voltaget Voeak 3.0 Volts Capacitance (Vr = OV) Co 2 2 2 2 pF Stored Charge (Note 1) (Ir = 10mA) (See Figures 9 and 10) Qs 32 32 32 32 pc *MIL type available 750mV peak square wave, 0.1 usec. pulse width, 5 to 100 kHz repetitive rate, generator tr = 30 nsec. tCapacitance as measured on Boonton Model 75A capacitance bridge at a signal level of 50 mV and a frequency of 1 MHz at Vr = O volts. Stored Charge as measured on B-Line Electronics Model QS-3 stored charge meter. Pulse amplitude == 5 volts, pulse width = 50 nsec., rise time = 0.4 nsec., source impedance = 10 ohms. 2631000 1N4151, 2, 3 SHADED AREA INDICATES 25C GUARANTEED LIMITS OF CONTROLLED CONDUCTANCE TYPES IN3605, 1N4454 IN4533,1N4534,IN4I52 AND 1N4532, 3, 4 TRANSIENT THERMAL RESISTANCE -ry C/mW TYPICAL FORWARD VOLTAGE CHARACTERISTICS ALL TYPES 3 FORWARD CURRENT ~ Ip - MILLIAMPERES Oo) 0.01 oO 0.2 0.4 06 0.8 FORWARD VOLTAGE -Ve - VOLTS Figure 2 12 | MAXIMUM TRANSIENT 1.O}- THERMAL RESISTANCE (HEATSINK SPACING 0.250" |___ FROM END OF DIODE BODY) 0.8 0.6 IN4I51 IN4152 IN4153 IN4454 04 IN 4532 IN4533 IN4534 a MHD6IS. A 0.2 0 103 10-2 10-1 I 10 100 DURATION OF PEAK SQUARE WAVE FOWARD POWER PULSE-SECONDS Figure 4 TYPICAL CAPACITANCE REVERSE VOLTAGE ALL TYPES 01 -l ! Vp_ 7 VOLTS Figure 6 10,000 woe I ] 8,000 |-- + 6,000 |- { | 4 | , 4,000 om | 2,000 ve aoe 1 | 1,000 t t 800 t t t 600} - 400 | oo t L - al = 200|--- 4 | I nw TYPICAL REVERSE CURRENT VS. TEMPERATURE ALL TYPES x | r 1OQ mmm oy 8 a = z 2 & I ho L2 '9 25 5o- 75 400 Tes 180 Tj! Figure 3 3.0 re} t+ | a TYPICAL r_| lett ae pL 8 TYPICAL TEMPERATURE | we COEFFICIENT (ALL TYPES} [-~_] | 4 Lo ol J 1 10 100 Tr INMA * Figure 5 190000 TYPICAL REVERSE CURRENT CHARACTERISTICS (25C) 10000 t 1000 L 2 a @ ra 5 3 ws 2 100 & > a @ 100 264 40 REVERSE VOLTAGE - Vdc 60 80 100 120 Figure 7NOTE 1: STORED CHARGE 1N4151, 2, 3 When a forward biased diode is subjected to a reverse voltage step a reverse current IN4454 will flow for a short time as a result of the stored charge consisting of minority carriers 1N4532, 3, 4 in the vicinity of the junction. The typical waveform of reverse current vs time for a diode subjected to a large reverse voltage is shown in Figure 8. The time required for the diode to recover its reverse blocking condition will depend on the quantity of charge stored and the rate at which the charge is removed by recombination inside the diode and by current flowing in the external circuit. Conventionally, the speed of a diode is characterized by the reverse recovery time, t.,, measured to some arbitrary current level as in Figure 8. However, for higher speed diodes reverse recovery time is not a satisfactory parameter for characterizing the speed of the diode since it is dependent on arbitrary circuit conditions and is very dependent on the construction of the test circuit. Stored charge, on the other hand, is measured by integrating the reverse cur- rent of the diode (as shown by the shaded area in Figure 8), and is consequently much less dependent on the construction of the test circuit and on arbitrary circuit conditions. Stored charge is a more ideal parameter for characterizing the speed of a diode since it represents an intrinsic characteristic of the diode and can be measured with good reproducibility on low cost instruments which have direct meter readout. Stored charge can be correlated with reverse recovery time measurements on a specific t,, test jig. Typical correlation curves are shown on the graph below. TYPICAL REVERSE RECOVERY WAVEFORM References: {1) JEDEC Proposed Method for Direct Measurement of Diode Stored Charge, JS-2-65-11 FO R A H IGH SPEED DIODE (2) Measurement of Stored Charge in High Speed Diodes, T. P. Sylvan Application Note #90.30 (avail- Figure 8 able on request) TEK S6IA/ 3S76/3T77 SAMPLING SCOPE OR 60 n SEC EQUIVALENT DELAY LINE PA PB TEK 109 xr TEK 29! PULSE , DIODE SWITCHING GENERATOR! TEE TIME TESTER Figure 9 7 Poy yy yy] TYPICAL CORRELATION BETWEEN STORED CHARGE AND REVERSE a RECOVERY TIME x 6 (Q@, MEASURED IN B-LINE ELECTRONICS Ym 8 QS-3 STORED CHARGE METER AT L KX 3 Ip =lOmA, t,, MEASURED IN _ Y* 2 5 TEKTRONIX 291 DIODE TEST FIXTURE LL LZ 8 AT CONDITIONS INDICATED) RS 3 LAs Kot " He LY 48 =, Ly eS ra ' ad io 2 Z ot = . > NH +6 w 3 V4 at 8 ZL a ee z V4 N Je 2 2 Lom 9 & YY @ * Fe L a Aw @ YY \ rT [4 10 20 30 40 50 60 70 80 90 STORED CHARGE Qs PICO COULOMBS Figure 10 265