55 A
90 A
110 A
THREE PHASE CONTROLLED BRIDGE
Bulletin I27503 08/97
1
MT..KB SERIES
Power Modules
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53MT.KB 93MT.KB 113MT.KB
Parameters 52MT.KB 92MT.KB 112MT.KB Units
51MT.KB 91MT.KB 111MT.KB
IO 55 90 110 A
@ TC 85 85 85 °C
IFSM @ 50Hz 390 950 1130 A
@ 60Hz 410 1000 1180 A
I2t @ 50Hz 770 4525 6380 A2s
@ 60Hz 700 4130 5830 A2s
I2√t 7700 45250 63800 A2√s
VRRM range 800 to 1600 V
TSTG range - 40 to 125 °C
TJ range - 40 to 125 °C
Major Ratings and Characteristics
Features
Package fully compatible with the industry standard INT-A-pak
power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 VRMS isolating voltage
UL E78996 approved
Description
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose
and heavy duty applications.
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53-93-113MT..KB Series
2
Bulletin I27503 08/97
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
IO Maximum DC output current 55 90 110 A 120° Rect conduction angle
@ Case temperature 85 85 85 °C
ITSM Maximum peak, one-cycle 390 950 1130 A t = 10ms No voltage
forward, non-repetitive 410 1000 1180 t = 8.3ms reapplied
on state surge current 330 800 950 t = 10ms 100% VRRM
345 840 1000 t = 8.3ms reapplied Initial
I2t Maximum I2t for fusing 770 4525 6380 A2s t = 10ms No voltage TJ = TJ max.
700 4130 5830 t = 8.3ms reapplied
540 3200 4510 t = 10ms 100% VRRM
500 2920 4120 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 7700 45250 63800 A2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold 1.17 1.09 1.04 V (16.7% x π x IT(AV) < I < π x I T(AV)), @ TJ max.
voltage
VT(TO)2 High level value of threshold 1.45 1.27 1.27 (I > π x IT(AV)), @ TJ max.
voltage
rt1 Low level value on-state 12.40 4.10 3.93 mΩ (16.7% x π x I T(AV) < I < π x IT(AV)), @ TJ max.
slope resistance
rt2 High level value on-state 11.04 3.59 3.37 (I > π x IT(AV)), @ TJ max.
slope resistance
VTM Maximum on-state voltage drop 2.68 1.65 1.57 V Ipk = 150A, TJ = 25°C
tp = 400µs single junction
di/dt Max. non-repetitive rate 150 A/µs TJ = 25oC, from 0.67 VDRM, ITM = π x I T(AV),
of rise of turned on current Ig = 500mA, tr < 0.5 µs, tp > 6 µs
IH Max. holding current 200 TJ = 25oC, anode supply = 6V,
mA resistive load, gate open circuit
IL Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
Forward Conduction
Voltage VRRM, maximum VRSM, maximum VDRM, max. repetitive IRRM/IDRM max.
Type number Code repetitive peak non-repetitive peak peak off-state voltage @ TJ = 125°C
reverse voltage reverse voltage gate open circuit
V V V mA
80 800 900 800
100 1000 1100 1000
53/52/51MT..KB 120 1200 1300 1200 10
140 1400 1500 1400
160 1600 1700 1600
80 800 900 800
93/92/91MT..KB 100 1000 1100 1000
113/112/111MT..KB 120 1200 1300 1200 20
140 1400 1500 1400
160 1600 1700 1600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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53-93-113MT..KB Series
3
Bulletin I27503 08/97
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
VINS RMS isolation voltage 4000 V TJ = 25oC all terminal shorted
f = 50Hz, t = 1s
dv/dt Max. critical rate of rise 500 V/µs TJ = TJ max., linear to 0.67 VDRM,
of off-state voltage (*) gate open circuit
Blocking
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.
Triggering
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
PGM Max. peak gate power 10 W TJ = TJ max.
PG(AV) Max. average gate power 2.5
IGM Max. peak gate current 2.5 A
-VGT Max. peak negative 10 V
gate voltage
VGT Max. required DC gate 4.0 V TJ = - 40°C
voltage to trigger 2.5 TJ = 25°C Anode supply = 6V, resistive load
1.7 TJ = 125°C
IGT Max. required DC gate 270 TJ = - 40°C
current to trigger 150 mA TJ = 25°C Anode supply = 6V, resistive load
80 TJ = 125°C
VGD Max. gate voltage 0.25 V @ TJ = TJ max., rated VDRM
applied
that will not trigger
IGD Max. gate current 6 mA
that will not trigger
Thermal and Mechanical Specifications
53MT.KB 93MT.KB 113MT.KB
Parameter 52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
TJ Max. junction operating -40 to 125 °C
temperature range
Tstg Max. storage temperature -40 to 125 °C
range
RthJC Max. thermal resistance, 0.18 0.14 0.12 K/W DC operation per module
junction to case 1.07 0.86 0.70 DC operation per junction
0.19 0.15 0.12 120° Rect condunction angle per module
1.17 0.91 0.74 120° Rect condunction angle per junction
RthCS Max. thermal resistance, 0.03 K/W Per module
case to heatsink Mounting surface smooth, flat an greased
T Mounting to heatsink 4 to 6 Nm
torque ± 10% to terminal 3 to 4
wt Approximate weight 225 g
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
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53-93-113MT..KB Series
4
Bulletin I27503 08/97
1 2 3
1 - Current rating code: 5 = 55 A (Avg)
9= 90 A (Avg)
11 = 110 A (Avg)
2 - Circuit configuration code: 3 = Full-controlled bridge
2= Positive half-controlled bridge
1= Negative half-controlled bridge
3 - Essential part number
4 - Voltage code: Code x 10 = VRRM (See Voltage Ratings Table)
5 - Generation II
6 - Critical dv/dt: None = 500V/µs (Standard value)
S90 = 1000V/µs (Special selection)
4
Device Code
Ordering Information Table
5 6
11 3 MT 160 K B S90
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Units
180o 120o 90o 60o 30o 180o 120o 90o 60o 30o
53/52/51MT.KB 0.072 0.085 0.108 0.152 0.233 0.055 0.091 0.117 0.157 0.236 K/W
93/92/91MT.KB 0.033 0.039 0.051 0.069 0.099 0.027 0.044 0.055 0.071 0.100
113/112/111MT.KB 0.027 0.033 0.042 0.057 0.081 0.023 0.037 0.046 0.059 0.082
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at di fferent conduction angles than DC)
NOTE: To order the Optional Hardware see Bulletin I27900
negative half-controlled bridge
(51, 91, 111MT..KB)
positive half-controlled bridge
(52, 92, 112MT..KB)
full-controlled bridge
(53, 93, 113MT..KB)
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53-93-113MT..KB Series
5
Bulletin I27503 08/97
Outline Table (with optional barriers)
All dimensions in millimeters (inches)
Outline Table (without optional barriers)
All dimensions in millimeters (inches)
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53-93-113MT..KB Series
6
Bulletin I27503 08/97
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Fig. 2 - Forward Voltage Drop Characteristics
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Ratings Characteristic
80
90
100
110
120
130
0 10 20 30 40 50 60
Maximum Allowable Case Temperature (°C)
Total O utpu t Cur r e nt ( A)
120°
(Rect)
53MT..KB Ser ies
1
10
100
1000
0 1 2 3 4 5 6 7
T = 25°C
J
Instantaneous On-stat e C u rrent (A)
Instan tane o u s On-stat e Voltag e ( V)
53MT. .KB S er ies
Per J u nction
T = 125°C
J
0 25 50 75 100 12 5
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
R = 0.05 K/W - Delta R
thSA
0.12 K/W
0.2 K/W
0.4 K/W
0
20
40
60
80
100
120
140
160
180
200
220
0 5 10 15 20 25 30 35 40 45 50 55
Total Output C urrent ( A )
Maximum Total Power Loss (W)
120°
(Rect)
53MT..KB Series
T = 125°C
J
150
200
250
300
350
1 10 100
Nu mb er Of E qual A mp litude Ha lf Cycle Current Pulses (N )
Peak Half Sine Wave On-state Current (A)
53MT..KB Series
Per Junction
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM J
150
200
250
300
350
400
0. 01 0.1 1
Peak H alf Sine W ave O n-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive S urge Current
Versus P u lse Train Duration. C ontrol
Of Conduction M ay Not Be Maintained.
Initial T = 125°C
No V o ltag e R e app lied
Ra ted V R e app lied
J
RRM
53MT. .KB S er ies
Per Junction
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53-93-113MT..KB Series
7
Bulletin I27503 08/97
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 6 - Current Ratings Characteristic
80
90
100
110
120
130
0 20 40 60 80 100
Maxim um Allowa ble C ase Tem pe rature (°C)
Total Output Current (A)
120°
(Rect)
93MT..KB Ser ies
1
10
100
1000
0. 5 1 1.5 2 2.5 3 3.5 4
T = 25°C
J
Instantaneous On-state Current (A)
Instan tane o u s On-stat e Volta g e ( V)
93MT..KB Series
Per Junction
T = 125°C
J
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
R = 0.05 K/W - Delta R
thSA
0.2 K/W
0.12 K/W
0.4 K/W
0
50
100
150
200
250
300
0 10 20 30 40 50 60 70 80 90
Total Output Current (A)
Ma xim um Tot al Powe r Los s (W )
120°
(Rect)
93MT. .KB S e ries
T = 125 °C
J
400
450
500
550
600
650
700
750
800
850
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Cu rre nt (A)
93MT. .KB S er ies
Per Junction
At A ny Rated Loa d Co ndition A nd Wi th
Rated V Applied Following Surge.
RRM
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
300
400
500
600
700
800
900
1000
0.0 1 0.1 1
Peak H alf Sine W ave O n-state Current (A)
Pulse Train Duration (s)
Versus Pulse Tra in Duration. C ont rol
Of Conduction May Not Be Maintained.
93MT. .KB S er ies
Per Junction
Initial T = 125°C
No V o ltag e R e app lied
Ra ted V R e app lied
Maxim um Non Repetitive Surge Current
RRM
J
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53-93-113MT..KB Series
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Bulletin I27503 08/97
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Fig. 12 - Forward Voltage Drop Characteristics
Fig. 13 - Total Power Loss Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 11 - Current Ratings Characteristic
80
90
100
110
120
130
0 20 40 60 80 100 120
Maximum Allowable Case Temperature (°C)
Total Output Current (A)
120°
(Rect)
11 3MT ..KB S eri es
1
10
100
1000
0.5 1 1. 5 2 2.5 3 3. 5 4
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
11 3MT..K B S erie s
Per Junction
T = 125°C
J
0 25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
0.3 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
R = 0.05 K/W - Delta R
thSA
0.12 K/W
0.4 K/W
0.2 K/W
0
50
100
150
200
250
300
350
0 10 20 30 40 50 60 70 80 90 100110
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
113MT..KB Series
T = 125°C
J
400
500
600
700
800
900
1000
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rate d V A pp lie d Fo llow in g Sur ge.
RRM
Peak Half Sine Wave On-state Current (A)
11 3MT..K B S erie s
Per Junction
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
400
500
600
700
800
900
1000
1100
1200
0.01 0.1 1
Peak H alf Sine W ave O n-state Current (A)
Pulse Train Duration (s)
Versus P u lse T rain D uration. Contr ol
Of Conduction May Not Be Maintained.
11 3MT..K B Ser ies
Per Junction
Initial T = 125°C
No Voltage Reapplied
Ra ted V R e app lied
Maximum Non Repetitive Su rge Cur rent
RRM
J
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Bulletin I27503 08/97
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Fig. 16 - Thermal Impedance ZthJC Characteristics
Fig. 17 - Gate Characteristics
0.1
1
10
100
0.001 0.0 1 0. 1 1 10 100 1000
(b) (a)
Rectangular gate pulse
(4) (3) (2) (1)
(1) PG M = 100 W, tp = 500 µs
(2) PG M = 50 W, tp = 1 m s
(3) PG M = 20 W , tp = 25 ms
(4) PG M = 10 W, tp = 5 m s
Instantaneous Ga te C ur rent (A)
Inst a ntan eous Gate Voltage (V)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
VGD IGD Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0 .5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µ s, tp >= 6 µs
a) Recomm ended loa d line for
b) Recomm ended load line for
53 / 93/ 1 13MT . .K B Ser ies
0.001
0.01
0.1
1
10
0.0 01 0.01 0. 1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
Per Junction
53MT. .KB S er ies
113 M T .. K B S eries
93 M T .. K B S eries
Steady State Value
R = 1.07 K/W
R = 0.86 K/W
R = 0.70 K/W
(DC O peration)
thJC
thJC
thJC
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