This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 02 / Apr. 2001 Hynix Semiconductor
GM76U256C Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 3.0V Low Power CMOS slow SRAM
Revision History
Revision No History Draft Date Remark
00 Revision History Insert Jul.08.2000 Final
Revised
- Datasheet format change
- PDIP package type insert
- Pin configuration change
01 Marking Information Add Dec.04.2000 Final
Revised
- AC Test Condition Add : 5pF Test Load
02 Changed Logo Apr.30.2001 Final
- HYUNDAI -> hynix
GM76U256C Series
Rev 02 / Apr. 2001 2
DESCRIPTION
The GM76U256C is a high-speed, low power and
32,786 X 8-bits CMOS Static Random Access
Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Low power consumption
• Battery backup(L/LL-part)
- 2.0V(min.) data retention
• Standard pin configuration
- 28 pin 600mil PDIP
-
28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Product Voltage
Speed Operation Standby Current(uA) Temperature
No. (V) (ns) Current(mA)
L LL (°C)
GM76U256C 3.3 100/120 2 20 10 0~70(Normal)
GM76U256CE
3.3 100/120 2 30 15 -25~85(Extended)
Note 1. Current value is max.
PIN CONNECTION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
/CS
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
/OE
A11
A9
A8
A13
/WE
Vcc
A14
A12
A7
A6
A5
A4
A3
I/O8
PDIP SOP TSOP-I(Standard)
PIN DESCRIPTION BLOCK DIAGRAM
Pin Name Pin Function
/CS Chip Select
/WE Write Enable
/OE Output Enable
A0 ~ A14 Address Inputs
I/O1 ~ I/O8 Data Input/Output
Vcc Power(+5.0V)
Vss Ground
A14
COLUMN DECODER
A0 ROW DECODER
MEMORY ARRAY
512x512
SENSE AMP
OUTPUT BUFFER
I/O1
I/O8
ADD INPUT BUFFER
/CS
/OE
/WE
WRITE DRIVER
CONTROL
LOGIC
GM76U256C Series
Rev 02 / Apr. 2001 2
ORDERING INFORMATION
Part No. Speed Power Temp Package
GM76U256CL 100/120 L-part
0 to 70°C
PDIP
GM76U256CLL 100/120 LL-part
0 to 70°C
PDIP
GM76U256CLE 100/120 L-part
-25 to 85°C
PDIP
GM76U256CLLE 100/120 LL-part
-25 to 85°C
PDIP
GM76U256CLFW 100/120 L-part
0 to 70°C
SOP
GM76U256CLLFW 100/120 LL-part
0 to 70°C
SOP
GM76U256CLEFW 100/120 L-part
-25 to 85°C
SOP
GM76U256CLLEFW
100/120 LL-part
-25 to 85°C
SOP
GM76U256CLT 100/120 L-part
0 to 70°C
TSOP-I Standard
GM76U256CLLT 100/120 LL-part
0 to 70°C
TSOP-I Standard
GM76U256CLET 100/120 L-part
-25 to 85°C
TSOP-I Standard
GM76U256CLLET 100/120 LL-part
-25 to 85°C
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol Parameter Rating Unit
Vcc, VIN, VOUT
Power Supply, Input/Output Voltage -0.3 to 4.6 V
TA Operating Temperature GM76U256C 0 to 70 °C
GM76U256CE -25 to 85 °C
TSTG Storage Temperature -65 to 150 °C
PD Power Dissipation 1.0 W
IOUT Data Output Current 50 mA
TSOLDER Lead Soldering Temperature & Time 260 •10 °C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
Vcc Power Supply Voltage 2.7 3.0 3.3 V
Vss Ground 0 0 0 V
VIH Input High Voltage 2.2 - Vcc+0.3
V
VIL Input Low Voltage -0.3(1) - 0.4 V
Note
1. VIL = -3.0V for pulse width less than 50ns
TRUTH TABLE
/CS
/WE
/OE
Mode I/O Operation
H X X Standby High-Z
L H H Output Disabled
High-Z
L H L Read Data Out
L L X Write Data In
Note
1. H=VIH, L=VIL, X=Don't Care
GM76U256C Series
Rev 02 / Apr. 2001 3
DC CHARACTERISTICS
Vcc = 3.0V ±10%, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended), unless otherwise specified.
Symbol
Parameter Test Condition Min.
Typ.
Max.
Unit
ILI Input Leakage Current Vss < VIN < Vcc -1 - 1 uA
ILO Output Leakage Current Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL -1 - 1 uA
Icc Operating Power Supply
Current /CS = VIL,
VIN = VIH or VIL, II/O = 0mA - - 2 mA
ICC1 Average Operating Current /CS = VIL, VIN = VIH or VIL,
Min. Duty Cycle = 100%, II/O = 0mA
- - 30 mA
ICC2 Average Operating Current /CS = VIL, VIN = VIH or VIL,
Cycle = 1us , II/O = 0mA - - 5 mA
ISB TTL Standby Current
(TTL Inputs) /CS= VIH,
VIN = VIH or VIL - - 0.3 mA
ISB1 CMOS Standby Current /CS > Vcc - 0.2V L - - 20 uA
(CMOS Inputs) VIN > Vcc - 0.2V or LL - - 10 uA
VIN < Vss + 0.2V LE - - 30 uA
LLE - - 15 uA
VOL Output Low Voltage IOL = 2.1mA - - 0.4 V
VOH Output High Voltage IOH = -1.0mA 2.4 - - V
Note : Typical values are at Vcc =3.0V, TA = 25°C
AC CHARACTERISTICS(I)
Vcc = 3.0V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
-10 -12 Min. Max.
Min Max.
1 tRC Read Cycle Time 100 - 120 - ns
2 tAA Address Access Time - 100 - 120 ns
3 tACS Chip Select Access Time - 100 - 120 ns
4 tOE Output Enable to Output Valid - 50 - 60 ns
5 tCLZ Chip Select to Output in Low Z 10 - 10 - ns
6 tOLZ Output Enable to Output in Low Z 5 - 5 - ns
7 tCHZ Chip Disable to Output in High Z 0 35 0 40 ns
8 tOHZ Out Disable to Output in High Z 0 35 0 40 ns
9 tOH Output Hold from Address Change 15 - 15 - ns
10
tWC Write Cycle Time 100 - 120 - ns
11
tCW Chip Selection to End of Write 80 - 100 - ns
12
tAW Address Valid to End of Write 80 - 100 - ns
13
tAS Address Set-up Time 0 - 0 - ns
14
tWP Write Pulse Width 70 - 85 - ns
15
tWR Write Recovery Time 0 - 0 - ns
16
tWHZ Write to Output in High Z 0 30 0 40 ns
17
tDW Data to Write Time Overlap 40 - 50 - ns
18
tDH Data Hold from Write Time 0 - 0 - ns
19
tOW Output Active from End of Write 10 - 10 - ns
READ CYCLE
Symbol
Parameter
#
Unit
WRITE CYCLE
GM76U256C Series
Rev 02 / Apr. 2001 4
AC TEST CONDITIONS
TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
Parameter Value
Input Pulse Level 0.4V to 2.2V
Input Rise and Fall Time 5ns
Input and Output Timing Reference Level 1.5V
Output Load tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW CL = 5pF + 1TTL Load
Others CL = 100pF + 1TTL Load
AC TEST LOADS
CL(1)
TTL
Note : Including jig and scope capacitance
CAPACITANCE
TA = 25°C, f = 1.0MHz
Symbol Parameter Condition Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
CI/O Input /Output Capacitance VI/O = 0V 8 pF
Note : These parameters are sampled and not 100% tested
GM76U256C Series
Rev 02 / Apr. 2001 5
TIMING DIAGRAM
READ CYCLE 1
ADDR
OE
CS
Data
Out
Data Valid
tRC
tACS
tCLZ
tOE
tOLZ
tAA
tOH
tOHZ
tCHZ
High-Z
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot
referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device
and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
tAA
Data ValidPrevious Data
tOH tOH
ADDR
Data
Out
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS= VIL.
3. /OE =VIL.
GM76U256C Series
Rev 02 / Apr. 2001 6
WRITE CYCLE 1(/OE Clocked)
ADDR
OE
CS
Data
Out
tWC
tDW
tOHZ
WE
Data Valid
tDH
tWP
tAS
Data In
tWR
tCW
tAW
WRITE CYCLE 2 (/OE Low Fixed)
tDW
tWHZ
WE
Data Valid
tDH
tWP
tAS
Data In
tWR
tCW
tAW
(7)
(8)
tOW
ADDR
CS
Data
Out
tWC
GM76U256C Series
Rev 02 / Apr. 2001 7
Notes(WRITE CYCLE):
1. A write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition
among /CS going low and /WE going low: A write ends at the earliest transition among /CS going high
and /WE going high. tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of /CS going low to the end of write .
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends as /CS,
or /WE going high.
5. If /OE and /WE are in the read mode during this period, and the I/O pins are in the output low-Z state,
input of opposite phase of the output must not be applied because bus contention can occur.
6. If /CS goes low simultaneously with /WE going low, or after /WE going low, the outputs remain in high
impedance state.
7. DOUT is the same phase of the latest written data in this write cycle.
8. DOUT is the read data of the new address.
DATA RETENTION CHARACTERISTIC
TA=0°C to 70°C (Normal)
Symbol
Parameter Test Condition Min Typ
Max
Unit
VDR Vcc for Data Retention CS>Vcc-0.2V, 2.0 - - V
VIN>Vcc-0.2V or VIN<Vss+0.2V
ICCDR Data Retention Current Vcc=3.0V, L - 1 15 uA
/CS>Vcc - 0.2V, LL - 0.5
7 uA
VIN>Vcc - 0.2V or LE - 1 20 uA
VIN< Vss + 0.2V LLE - 0.5
10 uA
tCDR Chip Deselect to Data
Retention Time See Data Retention 0 - - ns
tR Operating Recovery Time Timing Diagram tRC(2)
- - ns
Notes
1. Typical values are under the condition of TA = 25°C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
CS
VDR
CS>VCC-0.2V
tCDR tR
VSS
VCC
2.7V
2.2V
DATA RETENTION MODE
GM76U256C Series
Rev 02 / Apr. 2001 8
PACKAGE INFORMATION
28pin 600mil Dual In-Line Package(Blank)
• UNIT : INCH(mm) MIN.
MAX.
1.467(37.262)
1.447(36.754)
0.140(3.556)
0.120(3.048)
0.155(3.937)
0.145(3.683)
0.020(0.508)
0.021(0.533)
0.015(0.381)
0.100(2.54)BSC
0.065(1.650)
0.050(1.270)
0.090(2.286)
0.070(1.778)
0.014(0.356)
0.008(0.200)
0.600(15.240)BSC
0.550(13.970)
0.530(13.462)
0.035(0.889)
3 deg
11 deg
28pin 330mil Small O utline Package(FW)
UNIT : INCH(mm)
0.346(8.788)
0.338(8.585)
0.480(12.192)
0.460(11.684)
0.110(2.794)
0.094(2.388)
0.014(0.356)
0.002(0.051)
0.050(1.270)BSC 0.020(0.508)
0.014(0.356)
0.728(18.491)
0.720(18.288) 0.012(0.305)
0.008(0.203)
0.050(1.270)
0.030(0.762)
MAX
.
MIN.
GM76U256C Series
Rev 02 / Apr. 2001 9
28pin 8x13.4mm Thin Small Outline Package Standard(T)
0.468(11.9)
0.460(11.7)
0.536(13.6)
0.520(13.2)
0.027(0.7)
0.012(0.3) 0.008(0.2)
0.004(0.1)
0.319(8.1)
0.311(7.9) 0.040(1.02)
0.036(0.91)
0.008(0.20)
0.002(0.05)
0.022(0.55 BSC)
UNIT : INCH(mm)MAX.
MIN.
GM76U256C Series
Rev 02 / Apr. 2001 10
MARKING INFORMATION
HYUNDAI
GM7 6 U256Cc c -s s t
y y w w KOREA
PDIP
Package Marking Example
Index
•HYUNDAI : Hynix Logo
•KOREA : Origin Country
•GM76U256C : Part Name
•cc : Power Consumption
-L: Low Power
-LL : Low Low Power
•Blank / FW / T : Package Type
-Blank : DIP
-FW : SOP
-T: TSOP-I
•ss : Speed -10 : 100ns
-12 : 150ns
•t: Temperature
-Blank : Commercial ( 0 ~ 70 °C)
-E: Extended ( -25 ~ 85 °C)
•yy : Year ( ex : 00 = year 2000, 01 = year 2001 )
•ww : Work Week ( ex : 12 = ww12 )
Note
-Capital Letter : Fixed Item
-Small Letter : Non-fixed Item
TSOP-I
SOP
HYUNDAI
GM7 6 U2 5 6 Cc c FW s s
y y w w K ORE A
t
HYUNDAI
GM7 6 U2 5 6 Cc c Ts s t
y y w w K ORE A
HYUNDAI
GM7 6 U256Cc c -s s t
y y w w KOREA
PDIP
Package Marking Example
Index
•HYUNDAI : Hynix Logo
•KOREA : Origin Country
•GM76U256C : Part Name
•cc : Power Consumption
-L: Low Power
-LL : Low Low Power
•Blank / FW / T : Package Type
-Blank : DIP
-FW : SOP
-T: TSOP-I
•ss : Speed -10 : 100ns
-12 : 150ns
•t: Temperature
-Blank : Commercial ( 0 ~ 70 °C)
-E: Extended ( -25 ~ 85 °C)
•yy : Year ( ex : 00 = year 2000, 01 = year 2001 )
•ww : Work Week ( ex : 12 = ww12 )
Note
-Capital Letter : Fixed Item
-Small Letter : Non-fixed Item
TSOP-I
SOP
HYUNDAI
GM7 6 U2 5 6 Cc c FW s s
y y w w K ORE A
t t
HYUNDAI
GM7 6 U2 5 6 Cc c Ts s t
y y w w K ORE A
HYUNDAI
GM7 6 U2 5 6 Cc c Ts s t
y y w w K ORE A
