6.42
IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit) Commercial and Industrial Temperature Ranges
5
71V416S/L10(2) 71V416S/L12 71V416S/L15
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
t
RC
Read Cyc le Time 10
____
12
____
15
____
ns
t
AA
Address Access Time
____
10
____
12
____
15 ns
t
ACS
Chip Select Access Time
____
10
____
12
____
15 ns
t
CLZ
(1) Chip Select Low to Outp ut in Low-Z 4
____
4
____
4
____
ns
t
CHZ
(1) Chip Select High to Output in High-Z
____
5
____
6
____
7ns
t
OE
Ou tput Enable Lo w to Outp ut Vali d
____
5
____
6
____
7ns
t
OLZ
(1) Outp ut E nable Lo w to Outp ut i n Lo w-Z 0
____
0
____
0
____
ns
t
OHZ
(1) Output Enab le Hig h to Output in High-Z
____
5
____
6
____
7ns
t
OH
Output Hold from Address Change 4
____
4
____
4
____
ns
t
BE
By te E nab le Lo w to Outp ut Valid
____
5
____
6
____
7ns
t
BLZ
(1) By te E nable Lo w to Outp ut in Lo w-Z 0
____
0
____
0
____
ns
t
BHZ
(1) Byte Enable High to Output in High-Z
____
5
____
6
____
7ns
WRITE CYCLE
t
WC
Write Cycle Time 10
____
12
____
15
____
ns
t
AW
Address Valid to End of Write 8
____
8
____
10
____
ns
t
CW
Chip Select Low to End of Write 8
____
8
____
10
____
ns
t
BW
Byte Enable Low to End of Write 8
____
8
____
10
____
ns
t
AS
Address Set-up Time 0
____
0
____
0
____
ns
t
WR
Address Hold from End of Write 0
____
0
____
0
____
ns
t
WP
Write Pulse Width 8
____
8
____
10
____
ns
t
DW
Data Valid to End of Write 5
____
6
____
7
____
ns
t
DH
Data Ho ld Ti me 0
____
0
____
0
____
ns
t
OW
(1) Write E nable Hig h to Outp ut in Lo w-Z 3
____
3
____
3
____
ns
t
WHZ
(1) Write Enab le Lo w to Outp ut in Hig h-Z
____
6
____
7
____
7ns
6442 tbl 10
Timing Waveform of Read Cy cle No . 1(1,2,3)
AC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
NOTE:
1. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
2. Low power 10ns (L10) speed 0ºC to +70ºC temperature range only.
DATAOUT
ADDRESS
6442d06
tRC
tAA
tOH
DATA
OUT
VALID
PREVIOUS DATAOUT VALID
tOH
NOTES:
1. WE is HIGH for Read Cycle.
2. Device is continuously selected, CS is LOW.
3. OE, BHE, and BLE are LOW.