Data Sheet Shottky barrier diode RB558W Dimensions (Unit : mm) Land size figure (Unit : mm) 1.0 0.5 0.5 0.30.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.60.2 0.15 0.05 1.3 Applications Low current rectification 0.6 0.6 EMD3 0.55 0.1 0.5 0.5 1.0 0.1 Construction Silicon epitaxial planar 0.7 (1) (2) 0.7 0 0.1 0.1Min 0.20.1 -0.05 1.60.2 0.80.1 (3) 0.70.1 Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory Taping specifications (Unit : mm) 1.550.1 1.5 0.1 00 2.00.05 0.30.1 8.00.2 00.1 1.80.2 1.80.1 5.50.2 3.50.05 1.750.1 4.00.1 0.50.1 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature Limits Symbol VR Io IFSM Tj Tstg Unit V mA mA C C 30 100 500 125 40 to 125 (*1) Rating of per diode Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Symbol VF1 VF2 Min. - Typ. - Max. 0.35 Unit V - - 0.49 V IR - - 10 A 1/3 Conditions IF=10mA IF=100mA VR=10V 2011.04 - Rev.B Data Sheet RB558W 10000 100 Ta=75 1 Ta=-25 0.1 Ta=25 0.01 0.001 Ta=75 100 Ta=25 10 1 Ta=-25 0.1 0.01 0 100 200 300 400 500 600 10 0 280 270 260 20 15 10 AVE:2.017uA 5 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 13 12 AVE:17.34pF Ifsm 5 10 0.1 100 Per diode time REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) IF=10mA 100 Per diode 0.08 0.08 10 10 0.1 0.1 Rth(j-a) Mounted on epoxy board 1 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP Rth(j-c) t 0 1 1ms 14 10 0 IM=1mA 15 Ct DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 16 IR DISPERSION MAP 10 1000 17 10 VF DISPERSION MAP 15 20 Ta=25 f=1MHz VR=0V n=10pcs 18 11 20 15 19 0 1cyc 10 20 AVE:270.2mV Ifsm 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25 VR=10V n=30pcs 25 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 30 30 Ta=25 IF=10mA n=30pcs 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 300 290 10 1 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (/W) f=1MH 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 100 Ta=125 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 1000 D=1/2 0.06 DC Sin(180) 0.04 0.06 0.04 DC Sin(180) 0.02 0.02 D=1/2 300us 1 0.001 0 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2/3 0.2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.04 - Rev.B Data Sheet RB558W 0.3 0.3 0.2 DC 0A 0V Io t T VR D=t/T VR=15V Tj=125 D=1/2 0.1 Sin(180) 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode Per diode Io 0A 0V t DC 0.2 T VR D=t/T VR=15V Tj=125 D=1/2 0.1 Sin(180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A