Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Shottky barrier diode
RB558W
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Low current rectification
Features
1) Ultra small power mold type. (EMD3)
2) Low IR
3) High reliability.
Construction Structure
Silicon epitaxial planar
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRV
Io mA
IFSM mA
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit
VF1- - 0.35 V IF=10mA
VF2- - 0.49 V IF=100mA
IR--10μAVR=10V
Parameter Limits
Reverse voltage (DC) 30
Average rectified forward current (*1) 100
Forward current surge peak (60Hz・1cyc) (*1) 500
Junction temperature 125
Storage temperature 40 to 125
Reverse current
Conditions
(*1) Rating of per diode
Parameter
Forward voltage
EMD3
1.0
0.7
0.5
0.5
0.7
0.7
0.6 0.6
1.3
4.0±0.1 2.0±0.05 φ1.55±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ0.5±0.1
1.8±0.2
0.3±0.1
1.8±0.1
5.5±0.2
0.9±0.2
0~0.1
φ1.5 0.1
0
ROHM : EMD3
JEITA : SC-75A
JEDEC : SOT-416
dot
ear week factor
(3)
1.6±0.2
1.6±0.2
1.0±0.1
0.8±0.1
0.5 0.5
(2) (1)
0.15±0.05
0.7±0.1
0.55±0.1
0.1Min
0~0.1
0.2±0.1
-0.05
0.3±0.1
0.05
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