©2000 Fairchild Semiconductor International Rev. A, February 2000
BD242/A/B/C
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle≤2% Pulsed
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage: BD24 2
: BD242A
: BD242B
: BD242C
- 45
- 60
- 80
- 100
V
V
V
V
VCER Collector-Emitter Voltage: BD24 2
: BD242A
: BD242B
: BD242C
- 55
- 70
- 90
- 115
V
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 3 A
ICP *Collector Current (Pulse) - 5 A
IB Base Current - 1 A
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector- Emitt er Sustai ning Voltage
: BD242
: BD242A
: BD242B
: BD242C
IC = - 30mA, IB = 0 - 45
- 60
- 80
- 100
V
V
V
V
ICEO Collector Cut-off Current : BD242/A
: BD242B/C VCE = - 30 V, IB = 0
VCE = - 60 V, IB = 0 - 0.3
- 0.3 mA
mA
ICES Collector Cut-off Current : BD242
: BD242A
: BD242B
: BD242C
VCE = - 45 V, VBE = 0
VCE = - 60 V, VBE = 0
VCE = - 80 V, VBE = 0
VCE = - 10 0V, VBE = 0
- 0.2
- 0.2
- 0.2
- 0.2
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 1 mA
hFE * DC Current Gain VCE = - 4V, IC = - 1A
VCE = - 4V, IC = - 3A 25
10
VCE(sat) * Collector-Emitter Saturation V oltage IC = - 3A, IB = - 0.6A - 1.2 V
VBE(on) * Base-Emitter ON Voltage VCE = - 4V, IC = - 3A - 1.8 V
BD242/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD241/A/B/C respectively
1.Base 2.Collector 3.Emitter
1TO-220
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD242/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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Design This datasheet contains the design specifications for
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