VS-40TPS...PbF Series, VS-40TPS...-M3 Series
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Revision: 26-Oct-2018 1Document Number: 94388
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Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
• Designed and qualified according to
JEDEC®-JESD 47
•Low I
GT parts available
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch motor control, UPS, welding and battery
charge
DESCRIPTION
The VS-40TPS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
PRIMARY CHARACTERISTICS
IT(AV) 35 A
VDRM/VRRM 800 V, 1200 V
VTM 1.45 V
IGT 150 mA
TJ-40 °C to +125 °C
Package TO-247AC
Circuit configuration Single SCR
(G) 3
2
(A)
1 (K)
TO-247AC
Available
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 35 A
IRMS 55
VRRM/VDRM 800 to 1200 V
ITSM 600 A
VT40 A, TJ = 25 °C 1.45 V
dV/dt 1000 V/μs
dI/dt 100 A/μs
TJ-40 to +125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM/VDRM,
MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM,
MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-40TPS08APbF, VS-40TPS08A-M3 800 900
10
VS-40TPS08PbF, VS-40TPS08-M3 800 900
VS-40TPS12APbF, VS-40TPS12A-M3 1200 1300
VS-40TPS12PbF, VS-40TPS12-M3 1200 1300
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
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Revision: 26-Oct-2018 2Document Number: 94388
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 79 °C, 180° conduction half sine wave 35
A
Maximum continuous RMS
on-state current as AC switch IT(RMS) 55
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied
Initial
TJ = TJ max.
500
10 ms sine pulse, no voltage reapplied 600
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 1250 A2s
10 ms sine pulse, no voltage reapplied 1760
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 17 600 A2s
Low level value of threshold voltage VT(TO)1
TJ = 125 °C
1.02 V
High level value of threshold voltage VT(TO)2 1.23
Low level value of on-state slope resistance rt1 9.74 m
High level value of on-state slope resistance rt2 7.50
Maximum peak on-state voltage VTM 110 A, TJ = 25 °C 1.85 V
Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 100 A/μs
Maximum holding current IHAnode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C 200
mA
Maximum latching current ILAnode supply = 6 V, resistive load, TJ = 25 °C 300
Maximum reverse and direct leakage current IRRM/IDRM
TJ = 25 °C VR = Rated VRRM/VDRM
0.5
TJ = 125 °C 10
Maximum rate of rise of off-state voltage
40TPS12A dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg - k = 100
500
V/μs
Maximum rate of rise of off-state voltage
40TPS12 1000
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10 V
Maximum required DC gate voltage to trigger VGT
TJ = - 40 °C Anode supply = 6 V
resistive load
4.0
VTJ = 25 °C 2.5
TJ = 125 °C 1.7
Maximum required DC gate current to trigger IGT
TJ = - 40 °C Anode supply = 6 V
resistive load
270
mA
TJ = 25 °C 150
TJ = 125 °C 80
TJ = 25 °C, for 40TPS..APbF and 40TPS..A-M3 40
Maximum DC gate voltage not to trigger
for 40TPS12 VGD
TJ = 125 °C, VDRM = rated value
0.25 V
Maximum DC gate current not to trigger
for 40TPS12 IGD 6mA
Maximum DC gate voltage not to trigger
for 40TPS12A VGD
TJ = 125 °C, VDRM = rated value
0.15 V
Maximum DC gate current not to trigger
for 40TPS12A IGD 1mA
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
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Revision: 26-Oct-2018 3Document Number: 94388
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Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +125 °C
Maximum thermal resistance,
junction to case RthJC
DC operation
0.6
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC
40TPS08A
40TPS12A
40TPS08
40TPS12
70
80
90
100
110
120
130
010203040
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average On-state Current (A)
40TPS.. Series
R (DC) = 0.6 °C/ W
thJC
70
80
90
100
110
120
130
0 102030405060
DC
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
40TPS.. Se ries
R (DC) = 0.6 °C/ W
thJC
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
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Revision: 26-Oct-2018 4Document Number: 94388
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Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35 40
RM S Li m i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
40TPS.. Serie s
T = 1 2 5 ° C
J
0
10
20
30
40
50
60
70
80
0 102030405060
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Avera ge On-sta te Current (A)
40 TPS. . Se r i e s
T = 125°C
J
250
300
350
400
450
500
550
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pe a k Ha lf S
ine Wa ve On-state Current (A)
Initia l T = 125°C
@ 6 0 H z 0 . 0 0 8 3 s
@ 5 0 H z 0 . 0 1 0 0 s
J
4 0 TPS. . Se r i e s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
250
300
350
400
450
500
550
600
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Tra in Dura t io n ( s)
Maximum Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction Ma y Not Be Maintained.
40TPS.. Series
Initial T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p li e d
J
RRM
1
10
100
0.5 1 1.5 2
T = 2 5 ° C
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
4 0 TPS. . Se r i e s
J
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
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Revision: 26-Oct-2018 5Document Number: 94388
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Fig. 8 - Gate Characteristics
Fig. 9 - Gate Characteristics, 40TPS..A Series
Fig. 10 - Thermal Impedance ZthJC Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Voltage (V)
Instantaneous Gate Current (A)
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
(4) (3) (2) (1)
I
GD
V
GD
T
J
= 125 °C
T
J
= 50 °C
T
J
= - 40 °C
a)
b)
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
t
r
= 1 μs, t
p
≥ 6 μs
Frequency limited by PG(AV)
40TPS..Series
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Voltage (V)
Instantaneous Gate Current (A)
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
(4) (3) (2) (1)
TJ = 125 °C
TJ = 25 °C
TJ = - 40 °C
Frequency limited by PG(AV)
b) a)
I
GD
V
GD
Rectangular gate pulse
a) Recommended load line for rated dI/dt: 20 V, 30 Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω
t
r
= 1 μs, t
p
≥ 6 μs
Square Wave Pulse Duration (s)
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
40TPS.. Series
Transient Thermal Impedance ZthJC (°C/W)
0.001 0.01 0.1 1 0.0001
0.1
1
0.01
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 26-Oct-2018 6Document Number: 94388
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-40TPS08APbF 25 500 Antistatic plastic tubes
VS-40TPS08A-M3 25 500 Antistatic plastic tubes
VS-40TPS08PbF 25 500 Antistatic plastic tubes
VS-40TPS08-M3 25 500 Antistatic plastic tubes
VS-40TPS12APbF 25 500 Antistatic plastic tubes
VS-40TPS12A-M3 25 500 Antistatic plastic tubes
VS-40TPS12PbF 25 500 Antistatic plastic tubes
VS-40TPS12-M3 25 500 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95542
Part marking information TO-247AC PbF www.vishay.com/doc?95226
TO-247AC-M3 www.vishay.com/doc?95007
2- Current rating (40 = 40 A)
3- Circuit conguration:
4- Package:
5
T = thyristor
- Type of silicon:
6- Voltage ratings
P = TO-247AC
S = standard recovery rectier
8-
08 = 800 V
12 = 1200 V
7-
Device code
62 43 5 7 8
40 T P S12 A PbF
A = low IGT selection 40 mA maximum
None = standard Igt selection
1-Vishay Semiconductors product
1
VS-
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Outline Dimensions
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Revision: 20-Apr-17 1Document Number: 95542
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TO-247AC - 50 mils L/F
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 7.39 - 0.291
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
0.10 AC
M M
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6) Φ P (Datum B)
Φ P1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
Legal Disclaimer Notice
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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