UNISONIC TECHNOLOGIES CO., LTD
MMBT1815 NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2010 Unisonic Technologies Co., Ltd QW-R206-014,J
HIGH FREQUENCY NPN
AMPLIFIER TRANSISTOR
FEATURES
* Collector-Emitter Voltage: BVCEO=50V
* Collector Current up to 150mA
* High hFE Linearity
* Complement to MMBT1015
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Halogen Free Package 1 2 3
Packing
MMBT1815-x-AC3-R MMBT1815L-x-AC3-R MMBT1815G-x-AC3-R SOT-113 E B C Tape Reel
MMBT1815-x-AE3-R MMBT1815L-x-AE3-R MMBT1815G-x-AE3-R SOT-23 E B C Tape Reel
MMBT1815-x-AL3-R MMBT1815L-x-AL3-R MMBT1815G-x-AL3-R SOT-323 E B C Tape Reel
MMBT1815-x-AN3-R MMBT1815L-x-AN3-R MMBT1815G-x-AN3-R SOT-523 E B C Tape Reel
MARKING
PACKAGE MARKING
Y GR BL
SOT-23 C4Y L: Lead Free
G: Halogen Free
C4G L: Lead Free
G: Halogen Free
C4B L: Lead Free
G: Halogen Free
SOT-113
SOT-323
SOT-523
C4 L: Lead Free
G: Halogen Free
MMBT1815 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
SOT-23 250 mW
Collector Dissipation (Ta=25°C) SOT-523/SOT-113/SOT-323 PC 200 mW
Collector Current IC 150 mA
Base Current IB 50 mA
Junction Temperature TJ 150 °С
Storage Temperature TSTG -55 ~ +150 °С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO Ic = 100μA, IE = 0 50 V
Collector-Emitter Breakdown Voltage BVCEO Ic = 10mA, IB = 0 50 V
Emitter-Base Breakdown Voltage BVEBO I
E = 10μA, Ic = 0 5 V
Collector-Emitter Saturation Voltage VCE(SAT) Ic = 100mA, IB = 10mA 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(SAT) Ic = 100mA, IB = 10mA 1.0 V
Collector Cut-off Current ICBO V
CB = 60V, IE = 0 100 nA
Emitter Cut-off Current IEBO V
EB = 5V, Ic = 0 100 nA
DC Current Gain hFE1
hFE2
VCE = 6V, Ic = 2mA
VCE = 6V, Ic = 150mA
120
25 700
Transition Frequency fT V
CE = 10V,Ic = 50mA 80 MHz
Output Capacitance COB V
CB = 10V, IE = 0, f = 1MHz 2.0 3.0 pF
Noise Figure NF Ic = 0.1mA, VCE = 6V
RG = 10kΩ, f = 100Hz 1.0 1.0 dB
CLASSIFICATION OF hFE1
RANK Y GR BL
RANGE 120-240 200-400 350-700
MMBT1815 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Current Gain-Bandwidth
Product
Collector Output
Capacitance
Collector Current, Ic (mA)
100101102
103
Current Gain-bandwidth
product,f
T(MHz)
100
101
102
VCE =6V
Collector-Base Voltage (V)
Capacitance, Cob (pF)
100
101
102
100101102103
f=1MHz
IE=0
10
-1
10
-1
MMBT1815 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R206-014,J
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
