2SD880 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB834 ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC Tj Tstg 60 60 7 3 30 150 -50~150 V V V A W o C C o ELECTRICAL CHARACTERISTICS (TA=25oC) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Wing Shing Computer Components Co., (H.K)Ltd. Homepage: http:/ /www.wingshing.com Symbol Test Condition ICBO IEBO hFE1 hFE2 VCE(sat) fT VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 5V , IC=0.5A VCE= 5V , IC=3A IC=3A , IB=0.3A VCE= 5V , IC=0.5A Min Typ 60 20 TeL(852)2341 9276 Fax:(852)2797 8153. e_ mail:wsccltd@hkstar.com 0.4 3 Max Unit 100 100 300 A A 1.0 V MHZ