2SD880 NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY P O WER AMPLIFIER
! Complement to 2SB834 TO-220
ABSOLUTE MAXIMUM RATINGS (TA=25oC)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25oC)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
60
60
7
3
30
150
-50~150
V
V
V
A
W
oC
oC
ELECTRICAL CHARACTERISTICS (TA=25oC)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
V
CB= 60V , IE=0
V
EB= 7V , IC=0
V
CE= 5V ,
IC=0.5A
V
CE= 5V , IC=3A
IC=3A ,
IB=0.3A
V
CE= 5V ,
IC=0.5A
60
20 0.4
3
100
100
300
1.0
µA
µA
V
MHZ
Wing Shing Computer Components Co., (H. K )L td . TeL (852)234 1 92 76 Fax : (852)27 97 8153 .
Home page: http: / /www.wingshing.com e_ mail: wsccltd@hkstar.com
