ESH2B thru ESH2D Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Ultra Fast Rectifiers - Glass passivated junction chip - Ideal for automated placement - Low profile package - Ultra fast recovery time for high efficiency - Moisture sensitivity: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA DO-214AA(SMB) CaseDO-214AA(SMB) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant TerminalMatte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test PolarityIndicated by cathode band Weight0.09 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25 unless otherwise noted) PARAMETER SYMBOL ESH2B ESH2C ESH2D UNIT Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current IF(AV) 2 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 60 A VF 0.90 V Maximum instantaneous forward voltage (Note 1) @2A Maximum reverse current @ rated VR TJ=25 TJ=125 IR 2 uA 50 Maximum reverse recovery time (Note 2) Trr 20 nS Typical junction capacitance (Note 3) Cj 25 pF RJL RJA 20 75 TJ - 55 to + 175 O C TSTG - 55 to + 175 O C Typical thermal resistance Operating junction temperature range Storage temperature range O C/W Note 1Pulse test with PW=300u sec, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document NumberDS_D1309020 Version:E13 ESH2B thru ESH2D Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND PACKAGE PACKING CODE R5 ESH2x (Note 1) R4 Suffix "G" M4 SMB 850 / 7" Plastic reel SMB 3000 / 13" Paper reel SMB 3000 / 13" Plastic reel Note 1: "x" defines voltage from 100V (ESH2B) to 200V (ESH2D) EXAMPLE PREFERRED P/N PART NO. PACKING CODE ESH2D R5 ESH2D R5 ESH2D R5G ESH2D R5 GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) 3 2.5 2 1.5 1 RESISTER OR INDUCTIVE LOAD 0.5 0 0 25 50 75 100 125 150 175 TJ=125 10 1 0.1 TJ=25 0.01 0 LEAD TEMPERATURE (oC) 40 30 20 8.3mS Single Half Sine Wave JEDEC Method 0 NUMBER OF CYCLES AT 60 Hz Document NumberDS_D1309020 100 INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) 50 10 40 60 80 100 120 140 FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 60 1 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 10 1 Pulse Width=300us 1% Duty Cycle 0.1 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 Version:E13 ESH2B thru ESH2D Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE 60 CAPACITANCE (pF) 50 40 30 20 10 0 0.1 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 1.95 2.10 0.077 0.083 B 4.25 4.75 0.167 0.187 C 3.48 3.73 0.137 0.147 D 1.99 2.61 0.078 0.103 E 0.90 1.41 0.035 0.056 F 5.10 5.30 0.201 0.209 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol A B C D E Unit(mm) 2.3 2.5 4.3 1.8 6.8 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document NumberDS_D1309020 Version:E13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Taiwan Semiconductor: ESH2B ESH2C ESH2D ESH2BA R2 ESH2BA R3 ESH2CA R2 ESH2CA R3 ESH2DA R2 ESH2DA R3