CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Ultra fast recovery time for high efficiency
- Halogen-free according to IEC 61249-2-21 definition
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
Trr nS
Cj pF
T
JO
C
T
STG O
C
Document Number：DS_D1309020 Version:E13
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Operating junction temperature range - 55 to + 175
Storage temperature range - 55 to + 175
Note 1：Pulse test with PW=300u sec, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Typical junction capacitance (Note 3) 25
Typical thermal resistance R
θJL
R
θJA
20
75
O
C/W
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
2uA
50
Maximum reverse recovery time (Note 2) 20
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
60 A
Maximum instantaneous forward voltage (Note 1)
@ 2 A V
F
0.90 V
Maximum DC blocking voltage 100 150 200
Maximum average forward rectified current 2
Maximum repetitive peak reverse voltage 100 150 200
Maximum RMS voltage 70 105 140
Weight：0.09 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL ESH2B ESH2C ESH2D UNIT
MECHANICAL DATA
Case：DO-214AA(SMB)
DO-214AA(SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal：Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity：Indicated by cathode band
ESH2B thru ESH2D
Taiwan Semiconductor
Surface Mount Ultra Fast Rectifiers
FEATURES
- Moisture sensitivity: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
PART NO.
Note 1: "x" defines voltage from 100V (ESH2B) to 200V (ESH2D)
PART NO.
ESH2D
ESH2D
(TA=25℃ unless otherwise noted)
Document Number：DS_D1309020 Version:E13
ORDERING INFORMATION
EXAMPLE
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
ESH2D R5 R5
ESH2D R5G R5 G Green compound
SMB 3000 / 13" Plastic reel
PREFERRED P/N PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
ESH2x
(Note 1)
R5
Suffix "G"
SMB 850 / 7" Plastic reel
R4 SMB 3000 / 13" Paper reel
M4
ESH2B thru ESH2D
PACKING COD E GREEN COMPOUND
CODE
PACKAGE PACKING
0
0.5
1
1.5
2
2.5
3
0 25 50 75 100 125 150 175
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTER OR
INDUCTIVE LOAD
0
10
20
30
40
50
60
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3mS Single Half Sine Wave
JEDEC Method
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT
(uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=25℃
TJ=125℃
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300us
1% Duty Cycle
Min Max Min Max
A 1.95 2.10 0.077 0.083
B 4.25 4.75 0.167 0.187
C 3.48 3.73 0.137 0.147
D 1.99 2.61 0.078 0.103
E 0.90 1.41 0.035 0.056
F 5.10 5.30 0.201 0.209
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number：DS_D1309020 Version:E13
MARKING DIAGRAM
C4.3
D1.8
E6.8
SUGG ESTED PAD LAYOUT
Symbol Unit(mm)
A2.3
B2.5
ESH2B thru ESH2D
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit(mm) Unit(inch)
0
10
20
30
40
50
60
0.1 1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
