MMRF2004NBR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF LDMOS Wideband Integrated
Power Amplifier
The MMRF2004NB wideband integrated circuit is designed with on--chip
matching that makes it usable from 2300 to 2700 MHz. This multi--stage
structure is rated for 26 to 32 V operation and covers all typical cellular base
station modulation formats.
Typical WiMAX Performance: VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA,
Pout = 4 W Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --50 dBc in 1 MHz Channel Bandwidth
Driver Applications
Typical WiMAX Performance: VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA,
Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --56 dBc in 1 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 W CW Output
Power (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 5 W CW Pout
Typical Pout @ 1 dB Compression Point ≃25 W CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977
or AN1987.
MMRF2004NBR1
2500--2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
TO--272WB--16
PLASTIC
Document Number: MMRF2004NB
Rev. 0, 12/2013
Freescale Semiconductor
Technical Data
Figure 1. Functional Block Diagram
Quiescent Current
Temperature Compensation (1)
VDS1
RFin
VGS1
RFout/VDS2
VGS2
VDS1
(Top View)
Figure 2. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistors.
GND
NC
RFin
VGS1
GND
RFout/VDS2
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
VGS2 9
10
GND 11
VDS1
NC
NC
NC
VDS1
NC
NC
Freescale Semiconductor, Inc., 2013.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF2004NBR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDS --0.5, +65 Vdc
Gate--Source Voltage VGS --0.5, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1) TJ225 C
Input Power Pin 22 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value (2) Unit
Thermal Resistance, Junction to Case
WiMAX Application Stage 1, 28 Vdc, IDQ1 =77mA
(Case Temperature 75C, Pout = 4 W Avg.) Stage 2, 28 Vdc, IDQ2 = 275 mA
CW Application Stage 1, 28 Vdc, IDQ1 =77mA
(Case Temperature 81C, Pout = 25 W CW) Stage 2, 28 Vdc, IDQ2 = 275 mA
RJC
5.9
1.4
5.5
1.3
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1B
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) II
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Stage 1 -- On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=20Adc)
VGS(th) 1.2 1.9 2.7 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
DQ1 =77mA)
VGS(Q) —2.7 —Vdc
Fixture Gate Quiescent Voltage
(VDD =28Vdc,I
DQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q) 12.5 15.8 19.5 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MMRF2004NBR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Stage 2 -- On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=80Adc)
VGS(th) 1.2 1.9 2.7 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
DQ2 = 275 mAdc)
VGS(Q) —2.7 —Vdc
Fixture Gate Quiescent Voltage
(VDD =28Vdc,I
DQ2 = 275 mAdc, Measured in Functional Test)
VGG(Q) 11 14 18 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D= 800 mAdc)
VDS(on) 0.15 0.47 0.8 Vdc
Stage 2 -- Dynamic Characteristics (1)
Output Capacitance
(VDS =28Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —111 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain Gps 25.5 28.5 30.5 dB
Power Added Efficiency PAE 15 17 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB
Adjacent Channel Power Ratio ACPR —-- 5 0 -- 4 6 dBc
Input Return Loss IRL — -- 1 5 -- 1 0 dB
Typical Performances OFDM Signal -- 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,
IDQ1 =77mA,I
DQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth,
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error (2) RCE —-- 3 3 —dB
Error Vector Magnitude (2) EVM —2.2 —%rms
1. Part internally matched both on input and output. (continued)
2. RCE = 20Log(EVM/100)
4
RF Device Data
Freescale Semiconductor, Inc.
MMRF2004NBR1
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA, 2500--2700 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —25 — W
IMD Symmetry @ 27 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—50 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —90 —MHz
Gain Flatness in 200 MHz Bandwidth @ Pout =4WAvg. GF—0.5 —dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@P
out =25WCW
—2.1 —
Average Group Delay @ Pout = 25 W CW, f = 2600 MHz Delay —2.3 —ns
Part--to--Part Insertion Phase Variation @ Pout =25WCW,
f = 2600 MHz, Six Sigma Window
—22 —
Gain Variation over Temperature
(--30Cto+85C)
G — 0.036 —dB/C
Output Power Variation over Temperature
(--30Cto+85C)
P1dB —0.003 —dBm/C
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA, Pout =26dBmAvg.,
f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain Gps —27.8 —dB
Power Added Efficiency PAE —3.2 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR — 9 — dB
Adjacent Channel Power Ratio ACPR —-- 5 6 —dBc
Input Return Loss IRL — -- 1 3 —dB
Relative Constellation Error @ Pout =1.25WAvg.(1) RCE —-- 4 0 —dB
1. RCE = 20Log(EVM/100)
MMRF2004NBR1
5
RF Device Data
Freescale Semiconductor, Inc.
Figure 3. MMRF2004NBR1 Test Circuit Schematic
Z9 0.040x 0.061Microstrip
Z10 0.020x 0.050Microstrip
Z11 0.050x 0.050Microstrip
Z12 0.050x 0.027Microstrip
Z13* 0.338x 0.020Microstrip
Z14 1.551x 0.027Microstrip
PCB Rogers R04350B, 0.0133,r=3.48
* Line length includes microstrip bends
Z1 0.500x 0.027Microstrip
Z2 0.075x 0.127Microstrip
Z3 1.640x 0.027Microstrip
Z4 0.100x 0.042Microstrip
Z5 0.151x 0.268Microstrip
Z6 0.025x 0.268x 0.056Taper
Z7 0.050x 0.056Microstrip
Z8 0.356x 0.056Microstrip
Z2
RF
INPUT
VG1
Z5
RF
OUTPUT
C11
1
2
3
4
5
6
7
8
14
13
1211
10
9
15
16
NC
NC
NC
DUT
Z3
VDD1
Quiescent Current
Temperature
Compensation
Z1
NC
Z7 Z11
C10
NC
NC
Z8 Z10Z9
C7
C8
C9
C17
Z4
C6
C5
C4
R4 R5 R6
C3
C2
C1
R1 R2 R3
VG2
NC
NC
NC
NC
Z6
V
D2
C13
C14
C15
C16
28 V
B1
Z13
Z12 Z14
C12
Table 6. MMRF2004NBR1 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 47 , 100 MHz Short Ferrite Bead 2743019447 Fair--Rite
C1, C4, C7, C12, C15 6.8 pF Chip Capacitors ATC600S6R8CT250XT ATC
C2, C5, C8, C13 10 nF Chip Capacitors C0603C103J5RAC Kemet
C3, C6, C9, C14 1F, 50 V Chip Capacitors GRM32RR71H105KA01B Murata
C10 2.4 pF Chip Capacitor ATC600S2R4BT250XT ATC
C11 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC
C16, C17 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata
R1, R4 12 K, 1/4 W Chip Resistors CRCW12061202FKEA Vishay
R2, R3, R5, R6 1K, 1/4 W Chip Resistors CRCW12061001FKEA Vishay
6
RF Device Data
Freescale Semiconductor, Inc.
MMRF2004NBR1
Figure 4. MMRF2004NBR1 Test Circuit Component Layout
C17
C9
C8
C7
C4
C5 C1
C2
R4 R5 R6
R1 R2 R3
VG1
VG2
C6
C3
C10 C11
C12
C16
B1
C13
C14
C15
CUT OUT AREA
MMRF2004NBR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2500
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg.
-- 2 4
-- 1 6
-- 1 8
-- 2 0
-- 2 2
26.6
28.6
28.4
28.2
-- 5 8
18
17
16
15
-- 5 3
-- 5 4
-- 5 5
-- 5 6
PAE, POWER ADDED
EFFICIENCY (%)
Gps, POWER GAIN (dB)
28
27.8
27.4
27.2
27
26.8
2525 2550 2575 2600 2625 2650 2675 2700
14
-- 5 7
-- 2 6
PARC
PARC (dB)
-- 1
-- 0 . 2
-- 0 . 4
-- 0 . 6
-- 0 . 8
-- 1 . 2
ACPR (dBc)
27.6
-- 1
-- 0 . 2
-- 0 . 4
-- 0 . 6
-- 0 . 8
-- 1 . 2
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout =26dBmAvg.
26.6
28.6
28.4
28.2
-- 6 1
3.5
3
2.5
2
-- 5 6
-- 5 7
-- 5 8
-- 5 9
Gps, POWER GAIN (dB)
28
27.8
27.6
27.4
27.2
27
26.8
1.5
-- 6 0
IRL, INPUT RETURN LOSS (dB)
-- 3 0
-- 1 0
-- 1 5
-- 2 0
-- 2 5
-- 3 5
2500 2525 2550 2575 2600 2625 2650 2675 2700
PARC
ACPR (dBc)
PARC (dB)
Figure 7. Power Gain versus Output Power
@I
DQ1 =77 mA
100
23
30
1
IDQ2 = 412 mA
344 mA
Pout, OUTPUT POWER (WATTS) CW
VDD =28Vdc
IDQ1 =77mA
f = 2600 MHz
137 mA
275 mA
28
27
26
10
Gps, POWER GAIN (dB)
29
206 mA
25
24
0.1
Figure 8. Power Gain versus Output Power
@I
DQ2 = 275 mA
100
23
30
1
IDQ1 = 103 mA
96 mA
Pout, OUTPUT POWER (WATTS) CW
VDD =28Vdc
IDQ2 = 275 mA
f = 2600 MHz
28
27
26
10
Gps, POWER GAIN (dB)
29
25
24
0.1
77 mA
58 mA
39 mA
VDD =28Vdc,P
out =4W(Avg.),I
DQ1 =77mA,I
DQ2 = 275 mA
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF
VDD =28Vdc,P
out =26dBm(Avg.),I
DQ1 =77mA,I
DQ2 = 275 mA
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
PAE
PAE, POWER ADDED
EFFICIENCY (%)
PAE
8
RF Device Data
Freescale Semiconductor, Inc.
MMRF2004NBR1
TYPICAL CHARACTERISTICS
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
0
IM3--U
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 27 W (PEP), IDQ1 =77mA
IDQ2 = 275 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
Figure 10. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 5
9
0
-- 2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
112 15
5
35
30
25
20
15
10
PAE, POWER ADDED EFICIENCY (%)
--2 dB = 6.21 W
ACPR
PARC
ACPR (dBc)
-- 6 0
-- 3 0
-- 3 5
-- 4 0
-- 5 0
-- 4 5
-- 5 5
29
Gps, POWER GAIN (dB)
28.5
28
27.5
27
26
Gps
50
0
45
-- 6 0
-- 1 5
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
TC=--40_C85_C
101
40
35
30
25
20
-- 2 0
-- 2 5
-- 3 0
-- 3 5
-- 4 0
ACPR (dBc)
Gps
PAE, POWER ADDED EFFICIENCY (%),
Gps, POWER GAIN (dB)
-- 4 0 _C
25_C
ACPR
15
10
-- 4 5
-- 5 0
Figure 11. WiMAX, ACPR, Power Gain and
Power Added Efficiency versus Output Power
26.5
-- 3
-- 4
63
--1 dB = 4.01 W
--3 dB = 8.59 W
-- 1 0
5-- 5 5
25_C
85_C
-- 4 0 _C
25_C
85_C
VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA f = 2600 MHz, OFDM
802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA
f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4,4Bursts
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
PAE
PAE
MMRF2004NBR1
9
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
3400
-- 5
25
1800
-- 5 0
0
S21
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
S11
-- 1 0
19
-- 2 0
13
-- 3 0
7
-- 4 0
1
28002600240022002000
S11 (dB)
S21 (dB)
VDD =28Vdc
IDQ1 =77mA,I
DQ2 = 275 mA
3000 3200
10
RF Device Data
Freescale Semiconductor, Inc.
MMRF2004NBR1
WIMAX TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 13. OFDM 802.16d Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
Input Signal
OFDM 802.16d, 64 QAM 3/4,4Bursts
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
-- 6 0
-- 1 0
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
10 MHz
Channel BW
20
515
10
0-- 5
-- 1 0
-- 2 0
f, FREQUENCY (MHz)
Figure 14. WiMAX Spectrum Mask Specifications
-- 1 5
ACPR in 1 MHz
Integrated BW
ACPR in 1 MHz
Integrated BW
MMRF2004NBR1
11
RF Device Data
Freescale Semiconductor, Inc.
Zo=50
Zload
f = 2700 MHz
f = 2500 MHz
Zsource
f = 2500 MHz
f = 2700 MHz
VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA, Pout =4WAvg.
f
MHz
Zsource
Zload
2500 36.381 -- j4.271 5.717 -- j3.618
2525 36.041 -- j3.328 5.624 -- j3.187
2550 35.753 -- j2.363 5.578 -- j2.770
2575 35.516 -- j1.380 5.589 -- j2.412
2600 35.333 -- j0.381 5.586 -- j2.088
2625 35.203 + j0.635 5.579 -- j1.807
2650 35.126 + j1.664 5.552 -- j1.559
2675 35.104 + j2.707 5.564 -- j1.335
2700 35.138 + j3.760 5.568 -- j1.164
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 15. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF2004NBR1
Table 7. Common Source S--Parameters (VDD =28V,I
DQ1 =77mA,I
DQ2 = 275 mA, TA=25C, 50 Ohm System)
f
MHz
S11 S21 S12 S22
|S11| |S21| |S12| |S22|
1500 0.735 61.0 0.001 --167.6 0.000501 26.6 0.992 167.9
1550 0.729 53.3 0.004 --146.0 0.000361 34.7 0.993 166.3
1600 0.715 46.5 0.014 --146.4 0.000114 109.5 0.991 164.6
1650 0.695 39.8 0.039 --152.5 0.000385 148.4 0.992 162.7
1700 0.665 32.9 0.110 --166.8 0.000773 155.6 0.989 160.5
1750 0.619 25.0 0.299 169.4 0.00134 153.2 0.979 157.8
1800 0.549 15.1 0.708 134.4 0.00198 143.0 0.944 155.2
1850 0.452 2.6 1.335 96.3 0.00250 131.2 0.903 153.9
1900 0.332 --14.4 2.195 62.1 0.00290 121.7 0.879 153.0
1950 0.199 --40.1 3.445 32.7 0.00320 113.8 0.847 151.0
2000 0.089 --91.9 5.724 4.8 0.00345 108.5 0.817 147.7
2050 0.078 167.4 10.041 --26.2 0.00382 107.0 0.749 140.6
2100 0.116 90.3 19.072 --65.1 0.00525 105.3 0.571 125.2
2150 0.170 --13.2 32.642 --126.0 0.00781 77.9 0.054 160.2
2200 0.192 --93.2 31.339 171.3 0.00640 41.0 0.555 --144.4
2250 0.177 --123.0 26.174 130.3 0.00432 24.9 0.726 --160.3
2300 0.163 --132.6 23.605 98.7 0.00294 22.3 0.770 --167.1
2350 0.153 --140.5 22.427 70.0 0.00224 31.0 0.789 --170.1
2400 0.119 --153.6 21.922 41.7 0.00208 42.5 0.800 --171.0
2450 0.059 --165.3 21.172 14.2 0.00216 48.9 0.820 --171.2
2500 0.014 --50.7 20.172 --12.5 0.00227 48.9 0.850 --171.3
2550 0.055 --55.0 19.222 --39.5 0.00213 51.4 0.889 --171.7
2600 0.056 --84.7 17.366 --66.8 0.00209 57.8 0.933 --173.2
2650 0.029 177.4 14.562 --91.5 0.00247 65.6 0.961 --175.8
2700 0.069 103.3 12.199 -- 1 11 . 7 0.00286 62.2 0.968 --178.0
2750 0.122 84.1 10.485 --130.4 0.00308 56.3 0.969 --179.5
2800 0.287 59.8 8.086 --154.4 0.00326 50.9 0.969 179.3
2850 0.184 -- 5 . 4 7.102 --152.5 0.00292 39.2 0.966 178.6
2900 0.129 --17.4 6.753 --169.3 0.00256 38.6 0.969 178.0
2950 0.128 --41.0 6.107 175.4 0.00232 38.5 0.970 177.4
3000 0.164 --65.7 5.445 160.8 0.00213 39.9 0.972 176.9
3050 0.223 --86.2 4.867 146.7 0.00196 42.0 0.972 176.4
3100 0.297 --100.4 4.363 133.2 0.00183 46.0 0.973 176.0
3150 0.374 --110.4 3.918 120.0 0.00176 51.4 0.974 175.5
3200 0.447 --118.0 3.534 107.2 0.00181 56.5 0.974 174.9
3250 0.515 --123.4 3.198 95.3 0.00191 60.9 0.975 174.3
3300 0.563 --128.0 2.951 83.3 0.00211 58.8 0.975 173.7
3350 0.619 --131.8 2.761 71.2 0.00206 63.0 0.976 173.0
3400 0.651 --136.0 2.581 58.8 0.00218 64.8 0.975 172.3
3450 0.671 --140.1 2.418 46.0 0.00237 68.3 0.975 171.6
(continued)
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Table 7. Common Source S--Parameters (VDD =28V,I
DQ1 =77mA,I
DQ2 = 275 mA, TA=25C, 50 Ohm System) (continued)
f
MHz
S11 S21 S12 S22
|S11| |S21| |S12| |S22|
3500 0.679 --144.4 2.257 32.6 0.00265 68.5 0.974 171.0
3550 0.677 --147.9 2.054 19.2 0.00280 65.0 0.976 170.5
3600 0.661 --153.5 1.851 5.0 0.00281 67.1 0.976 170.0
3650 0.696 --153.8 1.644 -- 5 . 8 0.00328 69.3 0.976 169.6
3700 0.721 --161.3 1.453 --19.4 0.00350 65.8 0.977 169.4
3750 0.737 --168.1 1.243 --32.1 0.00357 64.5 0.978 169.2
3800 0.753 --174.7 1.042 --43.7 0.00374 64.5 0.979 169.2
3850 0.771 179.2 0.859 --54.3 0.00401 62.5 0.980 169.2
3900 0.788 174.4 0.708 --62.8 0.00407 58.4 0.980 169.3
3950 0.812 169.8 0.583 --71.5 0.00416 57.7 0.981 169.3
4000 0.829 166.0 0.477 --79.0 0.00427 55.8 0.982 169.3
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ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
19
50
6
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA
Pulsed CW, 10 sec(on), 10% Duty Cycle,
f = 2500 MHz
42
40
38
36
34
7981110 1412
Actual
Ideal
P1dB = 44.61 dBm (29 W)
13 15 165
Pout, OUTPUT POWER (dBm)
P3dB = 45.73 dBm (36 W)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
43
48
44
46
17 18
Test Impedances per Compression Level
Zsource
Zload
P1dB 42.7 + j11.6 4.86 -- j1.63
Figure 16. Pulsed CW Output Power
versus Input Power @ 28 V @ 2500 MHz
20
50
6
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ1 =77mA,I
DQ2 = 275 mA
Pulsed CW, 10 sec(on), 10% Duty Cycle,
f = 2700 MHz
42
40
38
36
32
7981110 1412
Actual
Ideal
P1dB = 45.42 dBm (28 W)
13 15 165
Pout, OUTPUT POWER (dBm)
P3dB = 44.46 dBm (35 W)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
42
48
44
46
17 18
34
319
Test Impedances per Compression Level
Zsource
Zload
P1dB 39.5 -- j8.7 3.53 -- j1.66
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 2700 MHz
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PACKAGE DIMENSIONS
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MMRF2004NBR1
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Dec. 2013 Initial Release of Data Sheet
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Document Number: MMRF2004NB
Rev. 0, 12/2013
