TPS54202HDDCR - TEXAS INSTRUMENTS

February, 2018 − Rev. 3 1Publication Order Number:

TVS5501V10/D

TVS5501V10

Transient Voltage

Suppressors

Features

•Protection for the following IEC Standards:

IEC61000−4−2 Level 4: ±30 kV Contact Discharge

IEC61000−4−5 (Lightning) 60 A (8/20 ms)

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000−4−2 (ESD) Contact

Air ±30

±30 kV

Operating Junction and Storage

Temperature Range TJ, Tstg −65 to +150 °C

Maximum Peak Pulse Current

8/20 ms @ TA = 25°CIPP 60 A

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

Device Package Shipping†

ORDERING INFORMATION

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

TVS5501V10MUT5G UDFN2

(Pb−Free) 8000 / Tape &

Reel

MARKING

DIAGRAM

Cathode 2

Anode

UDFN2

CASE 517CZ EM

E = Specific Device Code

M = Date Code

TVS5501V10

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Uni−Directional TVS

IPP

VRWM

VCVBR VF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage VRWM 10 V

Breakdown Voltage VBR IT = 1 mA 12 V

Reverse Leakage Current IRVRWM = 10 V 0.5 mA

Clamping Voltage (Note 1) VCIPP = 10 A 15 V

Clamping Voltage (Note 1) VCIPP = 60 A 20 V

Dynamic Resistance RDYN 100 ns TLP Pulse, I/O Pin to GND 0.05 W

Junction Capacitance CJVR = 0 V, f = 1 MHz 400 pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.

Figure 1. Positive TLP I−V Curve Figure 2. Negative TLP I−V Curve

Ipk (A) Ipk (A)

252015 301050

0−5−10−15−20−25−30

−16

−14

−12

−10

−8

−4

−2

Vpk (V)

−6

TVS5501V10

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IEC 61000−4−2 Spec.

Level Test Volt-

age (kV)

First Peak

Current

(A) Current at

30 ns (A) Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

Ipeak

90%

10%

IEC61000−4−2 W aveform

100%

I @ 30 ns

I @ 60 ns

tP = 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

50 W

Cable

TVS Oscilloscope

ESD Gun

Figure 4. Diagram of ESD Test Setup

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

Figure 5. 8 X 20 ms Pulse Waveform

100

0020406080

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE IRSM @ 8 ms

HALF VALUE IRSM/2 @ 20 ms

TVS5501V10

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PACKAGE DIMENSIONS

UDFN2 1.6x1.0, 1.1P

CASE 517CZ

ISSUE B

0.58 DIMENSIONS: MILLIMETERS

1.00

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

RECOMMENDED

1.70

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

ÉÉÉ

BOTTOM VIEW

2X 0.08 C

PIN ONE

REFERENCE

TOP VIEW

2X 0.08 C

0.05 C

CSEATING

PLANE

SIDE VIEW

DIM MIN MAX

MILLIMETERS

A0.45 0.55

A1 −−− 0.05

b0.83 0.93

D1.60 BSC

E1.00 BSC

e1.10 BSC

L0.35 0.45

e/2

0.07 BC

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TVS5501V10/D

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