VLMB/BG/TG31.. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES * SMD LED with exceptional brightness * Luminous intensity categorized * Compatible with automatic placement e3 equipment * EIA and ICE standard package * Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020B * Available in 8 mm tape * Low profile package * Non-diffused lens: excellent for coupling to light pipes and backlighting * Low power consumption * Luminous intensity ratio in one packaging unit IVmax/IVmin 1.6 * Lead (Pb)-free device * Preconditioning: acc. to JEDEC level 2a * ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D, Method 3015.7 19225 DESCRIPTION This device has been designed to meet the increasing demand for InGaN technology. The package of the VLMB/BG/TG31.. is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: SMD PLCC-2 * Product series: standard * Angle of half intensity: 60 APPLICATIONS * Automotive: backlighting in dashboards and switches * Telecommunication: indicator and backlighting in telephone and fax * Indicator and backlight for audio and video equipment * Indicator and backlight in office equipment * Flat backlight for LCDs, switches and symbols * General use PARTS TABLE PART COLOR, LUMINOUS INTENSITY TECHNOLOGY VLMB3140-GS08 Blue, IV > 45 mcd InGaN on SiC VLMB3140-GS18 Blue, IV > 45 mcd InGaN on SiC VLMBG3100-GS08 Blue green, IV > 140 mcd InGaN on SiC VLMBG3100-GS18 Blue green, IV > 140 mcd InGaN on SiC VLMTG3100-GS08 True green, IV > 180 mcd InGaN on SiC VLMTG3100-GS18 True green, IV > 180 mcd InGaN on SiC Document Number 81242 Rev. 1.1, 31-Aug-07 www.vishay.com 1 VLMB/BG/TG31.. Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1) VLMB3140, VLMBG3100, VLMTG3100 PARAMETER TEST CONDITION SYMBOL VALUE VR 5 V Tamb 80 C IF 20 mA tp 10 s IFSM 0.2 A Power dissipation PV 84 mW Junction temperature Tj 110 C Operating temperature range Tamb - 40 to + 100 C Storage temperature range Tstg - 40 to + 100 C RthJA 350 K/W Reverse voltage2) DC Forward current Surge forward current Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) UNIT Note: 1) Tamb = 25 C, unless otherwise specified 2) Driving LED in reverse direction is suitable for short term application OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMB3140, BLUE PARAMETER TEST CONDITION intensity2) SYMBOL MIN TYP MAX UNIT IF = 20 mA IV 45 100 Dominant wavelength IF = 20 mA d 462 470 Peak wavelength IF = 20 mA p 464 nm Angle of half intensity IF = 20 mA 60 deg Forward voltage IF = 20 mA VF 3 Reverse voltage IR = 10 A VR Temperature coefficient of VF IF = 20 mA TCV -4 mV/K Temperature coefficient of IV IF = 20 mA TCI - 0.4 %/K Luminous mcd 476 4.2 5 nm V V Note: 1) Tamb = 25 C, unless otherwise specified 2) in one Packing Unit I Vmax/IVmin 1.6 OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMBG3100, BLUE GREEN PARAMETER TEST CONDITION SYMBOL MIN TYP Luminous intensity IF = 20 mA IV 140 220 Dominant wavelength IF = 20 mA d 496 505 Peak wavelength IF = 20 mA p 502 nm Angle of half intensity IF = 20 mA 60 deg 2) MAX UNIT mcd 514 nm Forward voltage IF = 20 mA VF Reverse voltage IR = 10 A VR Temperature coefficient of VF IF = 20 mA TCV -4 mV/K Temperature coefficient of IV IF = 20 mA TCI - 0.2 %/K 3 5 4.2 V V Note: 1) T amb = 25 C, unless otherwise specified 2) in one Packing Unit I Vmax/IVmin 1.6 www.vishay.com 2 Document Number 81242 Rev. 1.1, 31-Aug-07 VLMB/BG/TG31.. Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMTG3100, TRUE GREEN PARAMETER TEST CONDITION SYMBOL MIN TYP IF = 20 mA IV 180 300 Dominant wavelength IF = 20 mA d 515 528 Peak wavelength IF = 20 mA p 522 nm Angle of half intensity IF = 20 mA 60 deg Luminous intensity2) MAX UNIT mcd 541 nm Forward voltage IF = 20 mA VF Reverse voltage IR = 10 A VR Temperature coefficient of VF IF = 20 mA TCV - 3.5 mV/K Temperature coefficient of IV IF = 20 mA TCI - 0.3 %/K 3 4.2 V 5 V Note: 1) Tamb = 25 C, unless otherwise specified 2) In one Packing Unit I Vmax/IVmin 1.6 LUMINOUS INTENSITY CLASSIFICATION GROUP STANDARD P Q R S T U LIGHT INTENSITY (MCD) OPTIONAL MIN MAX 1 45 56 2 56 71 1 71 90 2 90 112 1 112 140 2 140 180 1 180 224 2 224 280 1 280 355 2 355 450 1 450 560 2 560 710 Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable. CROSSING TABLE VISHAY OSRAM VLMB3140 LBT673 VLMBG3100 LVT673 VLMTG3100 LTT673 COLOR CLASSIFICATION BLUE BLUE GREEN GROUP MIN. MAX. 2 458 464 3 462 4 466 5 6 Document Number 81242 Rev. 1.1, 31-Aug-07 TRUE GREEN DOM. WAVELENGTH (NM) MIN. MAX. MIN. MAX. 468 496 502 515 523 472 500 506 521 529 470 476 504 510 527 535 474 480 508 514 533 541 www.vishay.com 3 VLMB/BG/TG31.. Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified 25 1.2 1.1 IV rel - Relative Luminous Intensity IF - Forward Current (mA) 20 15 10 5 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.0 0 16806 10 20 30 40 50 60 70 80 90 100 110 400 70 60 50 40 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VF - Forward Voltage (V) 19918 Figure 2. Forward Current vs. Forward Voltage IV rel - Relative Luminous Intensity 0.01 1 16194 10 I F - Forward Current (mA) 100 Figure 3. Specific Luminous Flux vs. Forward Current www.vishay.com 4 500 520 540 560 Figure 5. Relative Intensity vs. Wavelength 10 0.1 480 - Wavelength (nm) 16070 1 460 1.2 1.1 blue green 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 420 440 460 480 500 520 540 560 580 600 I Vrel - Relative Luminous Intensity IF - Forward Current (mA) 80 440 Figure 4. Relative Intensity vs. Wavelength 100 90 420 - Wavelength (nm) 16069 Tamb - Ambient Temperature (C) Figure 1. Forward Current vs. Ambient Temperature for InGaN I Vrel - Relative Luminous Intensity blue 1.0 1.2 1.1 true green 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 16068 - Wavelength (nm) Figure 6. Relative Intensity vs. Wavelength Document Number 81242 Rev. 1.1, 31-Aug-07 VLMB/BG/TG31.. Vishay Semiconductors 476 538 Dominant Wavelengthi (nm) Dominant Wavelengthi (nm) blue 474 472 470 536 true green 534 532 530 528 526 468 524 0 10 20 30 40 50 0 IF - Forward Current (mA) 16814 10 30 IV rel - Relative Luminous Intensity 0 Dominant Wavelengthi (nm) blue green 513 511 509 507 505 503 501 0 10 20 30 40 50 Figure 9. Dominant Wavelength vs. Forward Current 515 16813 40 I F - Forward Current (mA) 16812 Figure 7. Dominant Wavelength vs. Forward Current 20 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 50 95 10319 I F - Forward Current (mA) 10 0.6 0.4 0.2 0 0.2 0.4 0.6 Figure 10. Relative Luminous Intensity Figure 8. Dominant Wavelength vs. Forward Current PACKAGE DIMENSIONS in millimeters 3.5 0.2 0.9 1.75 0.10 technical drawings according to DIN specifications Mounting Pad Layout Pin identification area covered with solder resist 4 2.6 (2.8) A 2.8 C 2.2 + 0.15 1.2 4 1.6 (1.9) ? 3 2.4 + 0.15 Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05 95 11314-1 Document Number 81242 Rev. 1.1, 31-Aug-07 www.vishay.com 5 VLMB/BG/TG31.. Vishay Semiconductors METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay's LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) 10.0 9.0 120 4.5 3.5 Adhesive Tape 2.5 1.5 13.00 12.75 63.5 60.5 Identification Label: Vishay Type Group Tape Code Production Code Quantity Blister Tape Component Cavity 14.4 max. 180 178 94 8665 Figure 12. Reel Dimensions - GS08 94 8670 REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED TAPING OF VLM.3.. 2.2 2.0 3.5 3.1 10.4 8.4 120 5.75 5.25 3.6 3.4 4.5 3.5 4.0 3.6 2.5 1.5 8.3 7.7 13.00 12.75 62.5 60.0 Identification 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95 94 8668 Figure 11. Tape Dimensions in mm for PLCC-2 www.vishay.com 6 Label: Vishay Type Group Tape Code Production Code Quantity 321 329 14.4 max. 18857 Figure 13. Reel Dimensions - GS18 Document Number 81242 Rev. 1.1, 31-Aug-07 VLMB/BG/TG31.. Vishay Semiconductors SOLDERING PROFILE BARCODE PRODUCT LABEL EXAMPLE: IR Reflow Soldering Profile for lead (Pb)-free soldering Preconditioning acc. to JEDEC Level 2a 300 106 255 C 240 C 217 C 250 Temperature (C) max. 260 C 245 C A H VISHAY 200 max. 30 s 37 150 max. 100 s max. 120 s 100 B C D E F G 19919 max. ramp down 6 C/s max. ramp up 3 C/s 50 0 0 50 100 150 Time (s) 200 250 300 max. 2 cycles allowed 19885 Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B) TTW Soldering 300 948626-1 (acc. to CECC00802) 5s Lead Temperature A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: R2 = code for luminous intensity group 3 = code for color group D) Date code year/week E) Day code (e. g. 3: Wednesday) F) Batch no. G) Total quantity H) Company code Temperature (C) 250 200 second wave 235 C...260 C first wave full line: typical dotted line: process limits ca. 2 K/s ca. 200 K/s 150 100 C...130 C DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. 100 ca. 5 K/s 2 K/s 50 forced cooling Aluminum bag 0 0 50 100 150 200 250 Time (s) Label Figure 15. Double Wave Soldering of Opto Devices (all Packages) Reel 15973 FINAL PACKING The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Document Number 81242 Rev. 1.1, 31-Aug-07 www.vishay.com 7 VLMB/BG/TG31.. Vishay Semiconductors RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: * Storage temperature 10 C to 30 C * Storage humidity 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 C + 5 C/- 0 C and < 5 % RH (dry air/ nitrogen) or 96 h at 60 C + 5 C and < 5 % RH for all device containers or 24 h at 100 C + 5 C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 level 2a label is included on all dry bags. ESD PRECAUTION Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electro-static sensitive devices warning labels are on the packaging. VISHAY SEMICONDUCTORS STANDARD BAR CODE LABELS The Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. L E V E L CAUTION This bag contains MOISTURE -SENSITIVE DEVICES 2a 1. Shelf life in sealed bag 12 months at <40C and < 90% relative humidity (RH) 2. After this bag is opened devices that will be subjected to infrared reflow, vapor-phase reflow, or equivalent processing (peak package body temp. 260C) must be: a) Mounted within 672 hours at factory condition of < 30C/60%RH or b) Stored at <10% RH. 3. Devices require baking before mounting if: a) Humidity Indicator Card is >10% when read at 23C + 5C or b) 2a or 2b is not met. 4. If baking is required, devices may be baked for: 192 hours at 40C + 5C/-0C and <5%RH (dry air/nitrogen) or o or 96 hours at 605 Cand <5%RH For all device containers 24 hours at 1005C Not suitable for reels or tubes Bag Seal Date: ______________________________ (If blank, see bar code label) Note: LEVEL defined by EIA JEDEC Standard JESD22-A113 19786 Example of JESD22-A112 level 2a label www.vishay.com 8 Document Number 81242 Rev. 1.1, 31-Aug-07 VLMB/BG/TG31.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81242 Rev. 1.1, 31-Aug-07 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1