Vishay Semiconductors
VLMB/BG/TG31..
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
1
Standard SMD LED PLCC-2
FEATURES
SMD LED with exceptional brightness
Luminous intensity categorized
Compatible with automatic placement
equipment
EIA and ICE standard package
Compatible with IR reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020B
Available in 8 mm tape
Low profile package
Non-diffused lens: excellent for coupling to light
pipes and backlighting
Low power consumption
Luminous intensity ratio in one packaging unit
IVmax/IVmin 1.6
Lead (Pb)-free device
Preconditioning: acc. to JEDEC level 2a
ESD-withstand voltage: > 1 kV acc. to MIL STD 883 D,
Method 3015.7
19225
e3
DESCRIPTION
This device has been designed to meet the increasing
demand for InGaN technology.
The package of the VLMB/BG/TG31.. is the PLCC-2.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
Product group: LED
Package: SMD PLCC-2
Product series: standard
Angle of half intensity: ± 60°
APPLICATIONS
Automotive: backlighting in dashboards and
switches
Telecommunication: indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video
equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
VLMB3140-GS08 Blue, IV > 45 mcd InGaN on SiC
VLMB3140-GS18 Blue, IV > 45 mcd InGaN on SiC
VLMBG3100-GS08 Blue green, IV > 140 mcd InGaN on SiC
VLMBG3100-GS18 Blue green, IV > 140 mcd InGaN on SiC
VLMTG3100-GS08 True green, IV > 180 mcd InGaN on SiC
VLMTG3100-GS18 True green, IV > 180 mcd InGaN on SiC
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Document Number 81242
Rev. 1.1, 31-Aug-07
Vishay Semiconductors
VLMB/BG/TG31..
Note:
1) Tamb = 25 °C, unless otherwise specified
2) Driving LED in reverse direction is suitable for short term application
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one Packing Unit IVmax/IVmin 1.6
Note:
1) Tamb = 25 °C, unless otherwise specified
2) in one Packing Unit IVmax/IVmin 1.6
ABSOLUTE MAXIMUM RATINGS1) VLMB3140, VLMBG3100, VLMTG3100
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage2) VR5V
DC Forward current Tamb 80 °C IF20 mA
Surge forward current tp 10 µs IFSM 0.2 A
Power dissipation PV84 mW
Junction temperature Tj110 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm2)RthJA 350 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMB3140, BLUE
PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT
Luminous intensity2) IF = 20 mA IV45 100 mcd
Dominant wavelength IF = 20 mA λd462 470 476 nm
Peak wavelength IF = 20 mA λp464 nm
Angle of half intensity IF = 20 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF34.2V
Reverse voltage IR = 10 µA VR5V
Temperature coefficient of VFIF = 20 mA TCV- 4 mV/K
Temperature coefficient of IVIF = 20 mA TCI- 0.4 %/K
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMBG3100, BLUE GREEN
PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT
Luminous intensity2) IF = 20 mA IV140 220 mcd
Dominant wavelength IF = 20 mA λd496 505 514 nm
Peak wavelength IF = 20 mA λp502 nm
Angle of half intensity IF = 20 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF34.2V
Reverse voltage IR = 10 µA VR5V
Temperature coefficient of VFIF = 20 mA TCV- 4 mV/K
Temperature coefficient of IVIF = 20 mA TCI- 0.2 %/K
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
3
Vishay Semiconductors
VLMB/BG/TG31..
Note:
1) Tamb = 25 °C, unless otherwise specified
2) In one Packing Unit IVmax/IVmin 1.6
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel.
In order to ensure availability, single wavelength groups will not be
orderable.
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMTG3100, TRUE GREEN
PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT
Luminous intensity2) IF = 20 mA IV180 300 mcd
Dominant wavelength IF = 20 mA λd515 528 541 nm
Peak wavelength IF = 20 mA λp522 nm
Angle of half intensity IF = 20 mA ϕ± 60 deg
Forward voltage IF = 20 mA VF34.2V
Reverse voltage IR = 10 µA VR5V
Temperature coefficient of VFIF = 20 mA TCV- 3.5 mV/K
Temperature coefficient of IVIF = 20 mA TCI- 0.3 %/K
LUMINOUS INTENSITY CLASSIFICATION
GROUP LIGHT INTENSITY (MCD)
STANDARD OPTIONAL MIN MAX
P145 56
256 71
Q171 90
290 112
R1112 140
2140 180
S1180 224
2224 280
T1280 355
2355 450
U1450 560
2560 710
CROSSING TABLE
VISHAY OSRAM
VLMB3140 LBT673
VLMBG3100 LVT673
VLMTG3100 LTT673
COLOR CLASSIFICATION
GROUP
BLUE BLUE GREEN TRUE GREEN
DOM. WAVELENGTH (NM)
MIN. MAX. MIN. MAX. MIN. MAX.
2458 464
3462 468 496 502 515 523
4466 472 500 506 521 529
5470 476 504 510 527 535
6474 480 508 514 533 541
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Document Number 81242
Rev. 1.1, 31-Aug-07
Vishay Semiconductors
VLMB/BG/TG31..
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Figure 2. Forward Current vs. Forward Voltage
Figure 3. Specific Luminous Flux vs. Forward Current
0
5
10
15
20
25
0
Tamb - Ambient Temperature (°C)
16806
IF - Forward Current (mA)
10 20 30 40 50 60 70 80 11010090
0
10
20
30
40
50
60
70
80
90
100
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VF - Forward Voltage (V)
19918
IF - Forward Current (mA)
0.01
0.1
1
10
110 100
IF- Forward Current (mA)16194
I - Relative Luminous Intensity
Vrel
Figure 4. Relative Intensity vs. Wavelength
Figure 5. Relative Intensity vs. Wavelength
Figure 6. Relative Intensity vs. Wavelength
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
400 420 440 460 480 500 520 540 560
λ- Wavelength (nm)
16069
IV rel - Relative Luminous Intensity
blue
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
420 440 460 480 500 520 540 560 580 600
16070
blue green
I- Relative Luminous Intensity
Vrel
λ - Wavelength (nm)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
460 480 500 520 540 560 580 600 620
λ-Wavelength (nm)
16068
IV rel - Relative Luminous Intensity
true green
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
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Vishay Semiconductors
VLMB/BG/TG31..
PACKAGE DIMENSIONS in millimeters
Figure 7. Dominant Wavelength vs. Forward Current
Figure 8. Dominant Wavelength vs. Forward Current
IF - Forward Current (mA)
16814
Dominant Wavelength λ(nm)
468
470
472
474
476
0 1020304050
blue
ı
IF- Forward Current (mA)
16813
Dominant Wavelength λ(nm)
501
503
505
507
509
511
513
515
0 1020304050
blue green
ı
Figure 9. Dominant Wavelength vs. Forward Current
Figure 10. Relative Luminous Intensity
IF- Forward Current (mA)
16812
Dominant Wavelength λ(nm)
524
526
528
530
532
534
536
538
0 1020304050
true green
ı
0.4 0.2 0 0.2 0.4 0.6
95 10319 0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
8
0.7
1.0
IV rel - Relative Luminous Intensity
95 11314-1
Mounting Pad Layout
3.5 ± 0.2
0.9
1.75 ± 0.10
Pin identification
2.8+ 0.15
2.2
?
2.4
3+ 0.15
1.2
2.6 (2.8)
1.6 (1.9)
4
4
area covered with
solder resist
technical drawings
according to DIN
specifications
Drawing-No.: 6.541-5025.01-4
Issue: 8; 22.11.05
CA
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6
Document Number 81242
Rev. 1.1, 31-Aug-07
Vishay Semiconductors
VLMB/BG/TG31..
METHOD OF TAPING/POLARITY AND TAPE AND REEL
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
TAPING OF VLM.3..
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERRED
Figure 11. Tape Dimensions in mm for PLCC-2
Adhesive T ape
Component Cavity
Blister T ape
94 8670
1.85
1.65
4.0
3.6
3.6
3.4
2.05
1.95
1.6
1.4
4.1
3.9
4.1
3.9
5.75
5.25
8.3
7.7
3.5
3.1
2.2
2.0
0.25
94 8668
Figure 12. Reel Dimensions - GS08
Figure 13. Reel Dimensions - GS18
180
178
Identification
4.5
3.5
2.5
1.5
13.00
12.75
63.5
60.5
14.4 max.
10.0
9.0
120°
94 8665
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
321
329
Identification
4.5
3.5
2.5
1.5
13.00
12.75
62.5
60.0
14.4 max.
10.4
8.4
120°
18857
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
Document Number 81242
Rev. 1.1, 31-Aug-07
www.vishay.com
7
Vishay Semiconductors
VLMB/BG/TG31..
SOLDERING PROFILE BARCODE PRODUCT LABEL
EXAMPLE:
A) Type of component
B) Manufacturing plant
C) SEL - selection code (bin):
e.g.: R2 = code for luminous intensity group
3 = code for color group
D) Date code year/week
E) Day code (e. g. 3: Wednesday)
F) Batch no.
G) Total quantity
H) Company code
DRY PACKING
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
Figure 14. Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020B)
Figure 15. Double Wave Soldering of Opto Devices (all Packages)
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19885
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
max. 2 cycles allowed
255 °C
235 °C...260 °C
2 K/s
ca. 200 K/s
ca. 2 K/s
second
wave
first wave
ca. 5 K/s
5 s
full line: typical
dotted line: process limits
Time (s)
Temperature (°C)
Lead Temperature
300
250
200
150
100
50
0
0100 150 200 250
948626-1
TTW Soldering
(acc. to CECC00802)
50
100 °C...130 °C
forced cooling
106
37
VISHAY
AH
B C D E F G
19919
Aluminum bag
Label
Reel
15973
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Document Number 81242
Rev. 1.1, 31-Aug-07
Vishay Semiconductors
VLMB/BG/TG31..
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminum bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity 60 % RH max.
After more than 672 h under these conditions moisture
content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/
nitrogen) or
96 h at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 h at 100 °C + 5 °C not suitable for reel
or tubes.
An EIA JEDEC Standard JESD22-A112 level 2a label
is included on all dry bags.
Example of JESD22-A112 level 2a label
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the antistatic
shielding bag. Electro-static sensitive devices warning
labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD
BAR CODE LABELS
The Vishay Semiconductors standard bar code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
L E V E L
CAUTION
This bag contains
MOISTURE SENSITIVE DEVICES
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within
672 hours at factory condition of < 30°C/60%RH or
b) Stored at <10% RH.
3. Devices require baking before mounting if:
a) Humidity Indicator Card is >10% when read at 23°C + 5°C or
b) 2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen) or
96 hours at 60±5
o
Cand <5%RH For all device containers or
24 hours at 100±5°C Not suitable for reels or tubes
Bag Seal Date: ______________________________
(If blank, see bar code label)
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
2a
19786
Document Number 81242
Rev. 1.1, 31-Aug-07
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9
Vishay Semiconductors
VLMB/BG/TG31..
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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