BSS139
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv/dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead-plating; RoHS compliant
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 0.10 A
TA=70 °C 0.08
Pulsed drain current ID,pulse TA=25 °C 0.4
Reverse diode dv/dtdv/dt
ID=0.1 A,VDS=200 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
ESD class
(JESD22-A114-HBM)
0 (<250V)
Power dissipation
P tot
T A=25 °C
0.36 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1) see table on next page and diagram 11
Value
VDS 250 V
RDS(on),max 30 Ω
IDSS,min 0.03 A
Product Summary
PG-SOT-23
Type Package Tape and Reel Information Marking Pb-free
BSS139 PG-SOT-23 H6327: 3000 pcs/ree Yes
BSS139 PG-SOT-23 H6906: 3000 pcs/reel sorted in VS(th) bands1) STs
Rev. 1.
8
page 1 20
09
-08-18
STs
Yes
° Halogen free according to IEC61249-2-21
° Qualified according to AEC Q101
BSS139
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - ambient RthJA minimal footprint - - 350 K/W
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=-3 V, ID=250 µA 250 - - V
Gate threshold voltage VGS(th) VDS=3 V, ID=56 µA -2.1 -1.4 -1
Drain-source cutoff current ID(off)
VDS=250 V,
VGS=-3 V, Tj=25 °C - - 0.1 µA
VDS=250 V,
VGS=-3 V, Tj=125 °C --10
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 10 nA
On-state drain current IDSS VGS=0 V, VDS=10 V 30 - - mA
Drain-source on-state resistance RDS(on) VGS=0 V, ID=15 mA - 12.5 30 Ω
VGS=10 V,ID=0.1 mA - 7.8 14
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.08 A 0.060 0.13 - S
Threshold voltage VGS(th) sorted in bands2)
J VGS(th) VDS=3 V, ID=56 µA -1.2 - -1 V
K -1.35 - -1.15
L -1.5 - -1.3
M -1.65 - -1.45
N -1.8 - -1.6
2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Values
Rev. 1.
8
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BSS139
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss -6076pF
Output capacitance Coss - 6.7 8.4
Reverse transfer capacitance Crss - 2.6 3.3
Turn-on delay time td(on) - 5.8 8.7 ns
Rise time tr- 5.4 8.1
Turn-off delay time td(off) -2943
Fall time tf- 182 273
Gate Charge Characteristics
Gate to source charge Qgs - 0.14 0.21 nC
Gate to drain charge Qgd - 1.3 2.0
Gate charge total Qg- 2.3 3.5
Gate plateau voltage Vplateau - -0.28 - V
Reverse Diode
Diode continous forward current IS- - 0.10 A
Diode pulse current IS,pulse - - 0.4
Diode forward voltage VSD
VGS=-3 V, IF=0.1 A,
Tj=25 °C - 0.81 1.2 V
Reverse recovery time trr - 8.6 12.9 ns
Reverse recovery charge Qrr - 2.1 3.1 nC
VR=50 V, IF=0.04 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=-3 V, VDS=25 V,
f=1 MHz
VDD=125 V,
VGS=-3...5 V,
ID=0.04 A, RG=6 Ω
VDD=200 V,
ID=0.04 A,
VGS=-3 to 5 V
Rev. 1.
8
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BSS139
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
100101102103
10-4
10-3
10-2
10-1
100
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
103
102
101
100
tp [s]
ZthJA [K/W]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.04
0.08
0.12
0 40 80 120 160
TA [°C]
ID [A]
Rev. 1.
8
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BSS139
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V 0.5 V
1 V
10 V
0
10
20
30
0 0.04 0.08 0.12 0.16
ID [A]
RDS(on) [Ω]
0
0.05
0.1
0.15
0.2
0.25
0.00 0.05 0.10 0.15 0.20
ID [A]
gfs [S]
V 0.2-
V 0.1-
V 0
V 0.1
V 0.2
V 0.5
V 1
V 10
0
0.04
0.08
0.12
0.16
0.2
0246810
VDS [V]
ID [A]
25 °C
-55 °C
150 °C
0
0.05
0.1
0.15
0.2
0.25
0.3
-2 -1 0 1
VGS [V]
ID [A]
Rev. 1.
8
page 5 2009-08-18
BSS139
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=0.015 A; VGS=0 V VGS(th)=f(Tj); VDS=3 V; ID=56 µA
parameter: ID
11 Threshold voltage bands 12 Typ. capacitances
ID=f(VGS); VDS=3 V; Tj=25 °C C=f(VDS); VGS=-3 V; f=1 MHz
56 µA
J
K
L
M
N
0.01
0.1
1
10
-2 -1.5 -1 -0.5
VGS [V]
ID [mA]
typ
%98
0
10
20
30
40
50
60
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [Ω]
typ
%98
%2
-3
-2.5
-2
-1.5
-1
-0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
1
10
100
1000
0 5 10 15 20 25 30
VDS [V]
C [pF]
Rev. 1.
8
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BSS139
13 Forward characteristics of reverse diode 15 Typ. gate charge
IF=f(VSD)VGS=f(Qgate); ID=0.1 A pulsed
parameter: Tjparameter: VDD
16 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=250 µA
220
240
260
280
300
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
0.2 VDS(max) 0.5 VDS(max)
0.8 VDS(max)
-4
-2
0
2
4
6
8
0123
Qgate [nC]
VGS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
0.001
0.01
0.1
1
0 0.4 0.8 1.2 1.6
VSD [V]
IF [A]
Rev. 1.
8
page 7 2009-08-18
BSS139
Package Outline:
Footprint: Packaging:
Dimensions in mm
Rev. 1.
8
page 8 2009-08-18
Rev. 1.
8
page 9 2009-08-18
BSS139
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rig hts Rese rved.
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