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Features
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
Description
International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor
Drives applications such air conditioning systems and compressor drivers as well as in light industrial applica-
tion. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated
package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package.
A built-in temperature monitor and input logic protection function, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.
Using a Single in line package (SiP2) with heatspreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
PD-96956 Rev F
• Integrated Gate Drivers
• Temperature Monitor
• Overcurrent shutdown
• Fully Isolated Package
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.75~1.5kW / 85~253 Vac
• Isolation 2000VRMS min
• UL certification pending (UL number: E78996)
IRAMX20UP60A
Series
20A, 600V
with open Emitter Pins
Abso lu t e Maximum R atin g s
Parameter Description Max. Value Units
V
CES
/ V
RRM
IGBT/Diode Blocking Voltage 600
V
+
Positive Bus Input Voltage 450
I
O
@ T
C
=25°C RMS Phase Current (Note 1) 20
I
O
@ T
C
=100°C RMS Phase Current (Note 1) 10
I
O
Pulsed RMS Phase Current (Note 2) 35
F
PWM
PWM Carrier Frequency 20 kHz
P
d
Power dissipation per IGBT @ T
C
=25°C 38 W
V
ISO
Isolation Voltage (1min) 2000 V
RMS
T
J
(IGBT & Diodes) Operating Junction temperature Range -40 to +150
T
J
(Driver IC) Operating Junction temperature Range -40 to +150
T Mounting torque Range (M3 screw) 0.5 to 0.6 Nm
Note 1: Sinusoidal Modulation at V
+
=400V, T
J
=150°C, F
PWM
=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms; T
C
=25°C; F
PWM
=16kHz.
V
A
°C
IRAMX20UP60A
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Internal Electrical Schematic - IRAMX20UP60A
23 VS1
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2
6
LIN3
7
F
8
ITRIP
9
EN
10
RCIN
11
VSS
12
COM
13
22
VB2
21
HO2
20
VS2
19
VB3
18
HO3
17
VS3
VRU (12)
VRW (14)
VRV (13)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
THERMISTOR
R3
VDD (22)
VSS (23)
R1
R2
C
Rg1 Rg3 Rg5
Driver IC
RT
LO1 16
LO3 14
LO2 15
Rg2
Rg4
Rg6
T/ITRIP (21)
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN1 (18)
LIN2 (19)
LIN3 (20)
V (10)+
IRAMX20UP60A
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In vert e r S ectio n E l e ctri cal Ch ar ac ter i st i cs @TJ= 25°C
Symbol Parameter Min Typ Max Units
V(BR)CES
Collector-to-Emitter Breakdown
Voltage 600 --- --- V VIN=5V, IC=250µA
∆V(BR)CES / ∆TTemperature Coeff. Of
Breakdown Voltage --- 0.3 --- V/°C
--- 1.75 2.15 IC=10A, VCC=15V
--- 2.10 2.60 IC=10A, VCC=15V, TJ=150°C
--- 5 80 VIN=5V, V+=600V
--- 165 --- VIN=5V, V+=600V, TJ=150°C
--- 1.90 2.60
--- 1.50 2.20 IC=10A, TJ=150°C
-- -- 1.25
--- --- 1.10
RBR Bootstrap Resistor Value --- 22 --- Ω
∆RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 %
Conditions
ICES
Zero Gate Voltage Collector
Current µA
VCE(ON)
Collector-to-Emitter Saturation
Voltage V
VIN=5V, IC=1.0mA
(25°C - 150°C)
V
VBDFM
Bootstrap Diode Forward Voltage
Drop V
VFM Diode Forward Voltage Drop
IC=10A
IF=1A
IF=1A, TJ=125°C
Symbol Parameter Min Max Units
I
BDF
Bootstrap Diode Peak Forward
Current --- 4.5 A
P
BR Peak
Bootstrap Resistor Peak Power
(Single Pulse) --- 25.0 W
V
S1,2,3
High Side floating supply offset
voltage V
B1,2,3
- 25 V
B1,2,3
+0.3 V
V
B1,2,3
Hi
g
h Side floatin
g
supply volta
ge
-0.3 600 V
V
CC
Low Side and logic fixed supply
voltage -0.3 20 V
V
IN
Input voltage LIN, HIN, T/I
Trip
-0.3
Lower of
(V
SS
+15V) or
V
CC
+0.3V
V
Absolute Maximum Ratings (Continued)
All voltages are absolute referenced to COM.
Conditions
t
P
= 10ms,
T
J
= 150°C, T
C
=100°C
t
P
=100µs, T
C
=100°C
ESR / ERJ series
IRAMX20UP60A
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Inverte r S e c tion Switc h in g Characteristics @ T J= 25°C
Symbol Parameter Min Typ Max Units
EON Turn-On Switching Loss --- 390 490
EOFF Turn-Off Switching Loss --- 150 200
ETOT Total Switching Loss --- 540 690
EREC Diode Reverse Recovery energy --- 35 70
tRR Diode Reverse Recovery time --- 100 --- ns
EON Turn-on Switching Loss --- 620 780
EOFF Turn-off Switching Loss --- 305 400
ETOT Total Switching Loss --- 925 1180
EREC Diode Reverse Recovery energy --- 65 135
tRR Diode Reverse Recovery time --- 130 --- ns
QGTurn-On IGBT Gate Charge --- 56 84 nC
RBSOA Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area 10 --- --- µs
ICSC Short Circuit Collector Current --- 140 --- A
Conditions
IC=10A, V+=400V
VCC=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=10A, V+=400V
VCC=15V, L=2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=15A, V+=400V, VGE=15V
TJ=150°C, IC=10A, VP=600V
V+= 450V
VCC=+15V to 0V See CT3
TJ=150°C, VP=600V,
V+= 360V,
VCC=+15V to 0V See CT2
TJ=150°C, VP=600V, tSC<10µs
V+= 360V, VGE=15V
VCC=+15V to 0V See CT2
FULL SQUARE
µJ
µJ
Recommended Operating Conditions Driver Function
Symbol Definition Min Max Units
VB1,2,3 High side floating supply voltage VS+12 VS+20
VS1,2,3 High side floating supply offset voltage Note 4 450
VCC Low side and logic fixed supply voltage 12 20
VT/ITRIP T/ITRIP input voltage VSS VSS+5
VIN Logic input voltage LIN, HIN VSS VSS+5 V
Note 3: For more details, see IR21365 data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V
differential (Note 3)
V
V
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
IRAMX20UP60A
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Static E le ctric al Ch aracte ristics Drive r Func tio n
Symbol Definition Min Typ Max Units
VIH Logic "0" input voltage 3.0 --- --- V
VIL Logic "1" input voltage --- --- 0.8 V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V
VCCUV-, VBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V
VIN, Clamp Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA 4.9 5.2 5.5 V
IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA
IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA
ILK Offset Supply Leakage Current --- --- 60 µA
IIN+ Input bias current VIN=5V --- 200 300 µA
IIN- Input bias current VIN=0V --- 100 220 µA
T/ITRIP+ T/ITRIP bias current VITRIP=5V --- 30 100 µA
T/ITRIP- T/ITRIP bias current VITRIP=0V --- 0 1 µA
V(T/ITRIP)T/I
TRIP threshold Voltage 3.85 4.30 4.75 V
V(T/ITRIP,HYS) T/ITRIP Input Hysteresis --- 0.07 --- V
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable
to all six channels. (Note 3)
Dy namic El ectric al Charact erist i cs
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig.11) --- 600 --- ns
T
OFF
Input to Output propagation turn-
off delay time (see fig. 11) --- 700 --- ns
T
FLIN
Input Filter time (HIN, LIN) 100 200 --- ns V
IN
=0 & V
IN
=5V
T
BLT-Trip
I
TRIP
Blancking Time 100 150 ns V
IN
=0 & V
IN
=5V
D
T
Dead Time (V
BS
=V
DD
=15V) 220 290 360 ns V
BS
=V
CC
=15V
M
T
Matchin
g
Propa
g
ation Delay Time
(On & Off) --- 40 75 ns V
CC
= V
BS
= 15V, external dead
time> 400ns
T
T/ITrip
T/I
Trip
to six switch to turn-off
propagation delay (see fig. 2) --- --- 1.75 µs V
CC
=V
BS
= 15V, I
C
=10A, V
+
=400V
--- 7.7 --- T
C
= 25°C
--- 6.7 --- T
C
= 100°C
Driver only timing unless otherwise specified.
V
CC
=V
BS
= 15V, I
C
=10A, V
+
=400V
Post T/I
Trip
to six switch to turn-
off clear time (see fig. 2)
T
FLT-CLR
ms
IRAMX20UP60A
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Input-Ou tput Lo gic Level Table
T/ITRIP HIN1,2,3 LIN1,2,3 U,V,W
001
V+
0100
011Off
1XXOff
Ho
Lo
U,V,W
IC
Driver
V+
Hin1,2,3
Lin1,2,3
(15,16,17)
(18,19,20)
(8,5,2)
Th erm al and M echan i cal Ch ar acterist i cs
Symbol Parameter Min Typ Max Units Conditions
Rth(J-C) Thermal resistance, per IGBT --- 1.5 2.2
Rth(J-C) Thermal resistance, per Diode --- 55.5
Rth(C-S) Thermal resistance, C-S --- 0.1 ---
CDCreepage Distance 3.2 --- --- mm See outline Drawings
°C/W
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
In t ern al NTC - Th e r mi st or Ch ar ac t erist ic s
Parameter Definition Min Typ Max Units Conditions
R25 Resistance 97 100 103 kΩTC = 25°C
R125 Resistance 2.25 2.52 2.80 kΩTC = 125°C
B B-constant (25-50°C) 4165 4250 4335 k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 125 °C
Typ. Dissipation constant 1 mW/°C TC = 25°C
IRAMX20UP60A
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Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the
half-bridge output voltage would be determined by the direction of current flow in the load.
Figure 2. ITrip Timing Waveform
Figure1. Input/Output Timing Diagram
T/ITRIP
LIN1,2,3
HIN1,2,3
TFLT-CLR
50%
50%
U,V,W
50%
TT/ITRIP
50%
T/ITRIP
U,V,W
LIN1,2,3
HIN1,2,3
IRAMX20UP60A
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Module Pin-Out Description
1
23
Pin Name Description
1VB3 High Side Floating Supply Voltage 3
2U, VS3 Output 3 - High Side Floating Supply Offset Voltage
3NAnone
4VB2 High Side Floating Supply voltage 2
5V,VS2 Output 2 - High Side Floating Supply Offset Voltage
6NAnone
7VB1 High Side Floating Supply voltage 1
8W,VS1 Output 1 - High Side Floating Supply Offset Voltage
9NAnone
10 V+Positive Bus Input Voltage
11 NA none
12 LE1 Low Side Emitter Connection - Phase 1
13 LE2 Low Side Emitter Connection - Phase 2
14 LE3 Low Side Emitter Connection - Phase 3
15 HIN1 Logic Input High Side Gate Driver - Phase 1
16 HNI2 Logic Input High Side Gate Driver - Phase 2
17 HIN3 Logic Input High Side Gate Driver - Phase 3
18 LIN1 Logic Input Low Side Gate Driver - Phase 1
19 LIN2 Logic Input Low Side Gate Driver - Phase 2
20 LIN3 Logic Input Low Side Gate Driver - Phase 3
21 T/ITRIP Temperature Monitor and Shut-down Pin
22 VCC +15V Main Supply
23 VSS Negative Main Supply
IRAMX20UP60A
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Typical Application Connection IRAMX20UP60A
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-
mance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected
between these terminals should be located very close to the module pins. Additional high frequency capacitors, typi-
cally 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the
power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).
4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition
must be cleared before resuming operation.
035-Z2L03
IRAMX20UP60A
123
3-Phase AC
MOTOR
BOOT-STRAP
CAPACITORS
U
V
W
CONTROLLER
V+
DC BUS
CAPACITORS
PHASE LEG
CURRENT
SENSE
O/C
SENSE
(ACTIVE LOW)
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
Cb VB3
VB2
VB1
VS3
VS3
VS1
PGND
Vcc (15 V)
ITRIP
VSS
LE1
LE2
LE3
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
3.3 V
5k
1mF
TEMP
SENSE
O/C
SENSE
(ACTIVE LOW)
10mF
6.8K
10.2k
0.1mF
DGND
IRAMX20UP60A
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Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
02468101214161820
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
TJ = 150°C
Sinusoidal Modulation
Maximum Ou tp ut Phas e RMS Current - A
PWM Frequency - kHz
TC = 100°C
TC = 110°C
TC = 120°C
110100
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
TJ = 150°C
Sinusoidal Modulation
Maximum Ou tp ut Phas e RMS Current - A
Modulat ion Frequency - H z
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
IRAMX20UP60A
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Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
0123456789101112131415
0
20
40
60
80
100
120
140
160
180
200
220
TJ = 150°C
Sinusoidal Modulation
Total Power Losses - W
Output Phase Current - ARMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
02468101214161820
0
20
40
60
80
100
120
140
160
180
Total Power L os s es - W
PWM Switching Frequency - kHz
IOUT = 8 ARMS
IOUT = 10 ARMS
IOUT = 12 ARMS
TJ = 150°C
Sinusoidal Modulation
IRAMX20UP60A
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Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100
100
110
120
130
140
150
160
TJ avg. = 1.5840 x TTherm+ 3.2861
IGBT Junctio n Te mper a ture - °C
Internal Thermistor Temperature Equivalent Read Out - °C
0123456789101112131415
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
TJ = 150°C
Sinusoidal Modulation
Maximum Allowable Cas e Temp erature - °C
Ou tput P h as e C u r r en t - A RMS
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
IRAMX20UP60A
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Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
0 5 10 15 20
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
6.8µF
RBS DBS CBS
RG1
RG2
VS
HO
LO
COM
vB
VCC
HIN
LIN
+15V
VSS
V+
HIN
LIN
U,V,W
GND
VSS
3.3µF
4.7µF
10µF
Recomme nded Boots tr ap Capacitor - µ F
PWM Frequency - kHz
15µF
Figure 9. Thermistor Readout vs. Temperature (7.5kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
-40-40 -30 -20-20 -10 00102020 30 4040 50 6060 70 8080 90 100100 110 120120 130 140140 150
0.00.0
0.5
1.01.0
1.5
2.02.0
2.5
3.03.0
3.5
4.04.0
4.5
5.05.0
5.5
+VCC (15V)
VTHERM
RTHERM
REXT
12 kohm
Ther m is to r Pin Read- Out Volta ge - V
Thermistor Temperatur e - °C
Min
Avg.
Max
T
THERM
R
THERM
T
THERM
R
THERM
T
THERM
R
THERM
°C Ω°C Ω°C Ω
-40 4397119 25 100000 90 7481
-35 3088599 30 79222 95 6337
-30 2197225 35 63167 100 5384
-25 1581881 40 50677 105 4594
-20 1151037 45 40904 110 3934
-15 846579 50 33195 115 3380
-10 628988 55 27091 120 2916
-5 471632 60 22224 125 2522
0 357012 65 18322 130 2190
5 272500 70 15184 135 1907
10 209710 75 12635 140 1665
15 162651 80 10566 145 1459
20 127080 85 8873 150 1282
IRAMX20UP60A
14 www.irf.com
Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output propagation
turn-on delay time.
Figure 11b. Input to Output propaga-
tion turn-off delay time.
Figure 11c. Diode Reverse Recovery.
50%
HIN/LIN
VCE
IC
HIN/LIN
TOFF
tf
90% IC
10% IC
50%
VCE
VCE IC
HIN/LIN
TON
tr
50%
HIN/LIN 90% IC
10% IC
50%
VCE
VCE
IF
HIN/LIN
trr
Irr
IRAMX20UP60A
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Figure CT1. Switching Loss Circuit
Figure CT2. S.C.SOA Circuit
Figure CT3. R.B.SOA Circuit
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
5V
Hin1,2,3
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
Ho
Lo
U,V,W
IC
Driver
V+
Lin1,2,3
Hin1,2,3
IN
10k
1k
5VZD
VCC
Io
IN
IO
IN
IO
IN
IO
IRAMX20UP60A
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Package Outline IRAMX20UP60A
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.10mm typical
5- Tollerances ±0.5mm, unless otherwise stated
For mounting instruction see AN-1049
56
62
25.8
11.4
Ø3.4 TYP.
25.3
2 TYP.
22 PITCHES = 44
0.80
0.55
TYP.
123
46.2
50
5.5
2 TYP.
A
C
AB
Ø0.20
3
035-Z2L03
note 1
9
0.70
0.45 TYP.
INT.
11.4 REF
CONVEX ONLY
5.0 3.2
2.5
0.10 C
R0.6 TYP.
INT.
4.7
9.0 REF.
B
MIN.
IRAMX16UP60B
M
note 3
note 2
IRAMX20UP60A
IRAMX20UP60A
www.irf.com 17
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
07/05
Package Outline IRAMX20UP60A-2
For mounting instruction see AN-1049
56
62
25.8
11.4
Ø3.4 TYP.
25.3
2 TYP.
22 PITCHES = 44
0.80
0.55 TYP.
123
46.2
50
5.5
2 TYP.
A
C
B
AB
Ø0.20
3
035-Z2L03
513.9
11.4 REF.
0.70
0.45 TYP.
0.10
CONVEX ONLY
5 REF.
R0.6 TYP.
10° REF.
3.2
2.5
4.7
C
11.4 REF
MIN.
M
IRAMX16UP60B
note 3
note 2
note 1
IRAMX20UP60A
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.10mm typical
5- Tollerances ±0.5mm, unless otherwise stated
