MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Unit (mm) Dimensions Mechanical Data Unit (inch) Min Max Min Max Case : SOT- 23 small outline plastic package A 2.70 3.10 0.106 0.122 Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed B 1.20 1.65 0.047 0.065 C 0.30 0.50 0.012 0.020 High temperature soldering guaranteed: 260C/10s D 1.78 2.04 0.070 0.080 Weight : 0.008gram (approximately) E 2.20 3.00 0.087 0.118 Marking Code : 2A F 0.95 1.40 0.037 0.055 G Ordering Information 0.550 REF Suggested PAD Layout Packing Marking 0.95 SOT-23 MMBT3906 RF 3K / 7" Reel 2A 0.037 SOT-23 MMBT3906 RFG 3K / 7" Reel 2A Package 0.022 REF Part No. 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Units PD 350 mW Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Power Dissipation Collector Current Thermal resistance junction-ambient Junction and Storage Temperature Range IC -200 mA RthJA 357 C/W TJ, TSTG -55 to + 150 C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : C10 MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode Electrical Characteristics Max Units IC= -10A IE= 0 Symbol V(BR)CBO Min Collector-Base Breakdown Voltage -40 - V Collector-Emitter Breakdown Voltage IC= -1mA IB= 0 V(BR)CEO -40 - V Emitter-Base Breakdown Voltage IE= -10A IC= 0 V(BR)EBO -5 - V Collector Base Cut-off Current VCB= -30V ICBO - -50 nA Emitter Base Cut-off Current VEB= -6V IEBO - -50 nA Type Number DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage VCE= -1V IC= -0.1mA 60 VCE= -1V IC= -1mA VCE= -1V IC= -10mA VCE= -1V IC= -50mA 60 30 VCE= -1V IC= -100mA IC= -10mA IB= -1mA IC= -50mA IB= -5mA IC= -10mA IB= -1mA IC= -50mA IB= -5mA 80 hFE VCE(sat) VBE(sat) 100 300 - -0.25 - -0.4 -0.65 -0.85 - -0.95 V V Gain-bandwidth product VCE= -20V IC= -10mA f= 100MHz fT 250 - Output capacitance VCB= -5V IE=0 f= 1MHz Cobo - 4.5pF Delay time Vcc=-3V VBE=-0.5V Ic=-10mA td - 35 nS IB1=-1.0mA tr - 35 nS ts - 225 nS tf - 75 nS Rise time Storage time Vcc=-3V Ic=-10mA IB1=IB2=-1.0mA Fall time MHz Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d P1 T E A C F W B Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 0.10 2.77 0.10 1.22 0.10 1.50 0.10 178 1 55 Min 13.0 0.20 1.75 0.10 3.50 0.05 4.00 0.10 2.00 0.05 0.229 0.013 8.10 0.20 12.30 0.20 W1 D D2 D1 Direction of Feed Version : C10 MMBT3906 350mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Version : C10 MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode Rating and Sharacteristic Curves Version : C10