BGA428
Gain and PCS Low Noise Amplifier
Data Sheet, Rev. 2.3, Sept. 2011
RF & Protection Devices
Edition 2011-09-02
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 2011.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
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circuits, descriptions and charts stated herein.
Information
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BGA428
Data Sheet 3 Rev. 2.3, 2011-09-02
Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.
BGA428, Gain and PCS Low Noise Amplifier
Revision History: 2011-09-02, Rev. 2.3
Previous Version: 2007-11-06, Rev. 2.3
Page Subjects (major changes since last revision)
6 Correction of typing error in Table 3, (IIP3 is -9 dBm)
Data Sheet 4 Rev. 2.3, 2011-09-02
BGA428
Silicon Germanium Broadband MMIC Amplifier
1 Silicon Germanium Broadband MMIC Amplifier
Figure 1 Pin connection
Description
BGA428 is a high gain, low noise amplifier.
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Feature
• High gain, GMA = 20 dB at 1.8 GHz
• Low noise figure, NF = 1.4 dB at 1.8 GHz
• Prematched
• Ideal for GSM, DCS1800, PCS1900
• Open collector output
• Typical supply voltage: 2.4 - 3 V
• SIEGET®-45 technology
• Pb-free (RoHS compliant) package
SOT363
Type Package Marking
BGA428 SOT363 PGs
1
62
3
5
4
BGA428_Pin_connection.vsd
VCC,1
GND, 2;5
OUT, 3
GS, 4
IN, 6
BGA428
Silicon Germanium Broadband MMIC Amplifier
Data Sheet 5 Rev. 2.3, 2011-09-02
Maximum Ratings
Note: All Voltages refer to GND-Node
Thermal resistance
Table 1 Maximum ratings
Parameter Symbol Limit Value Unit
Device voltage VCC 4V
Voltage at pin Out Vout 4V
Voltage at pin GS VGS 3.5 V
Current into pin In Iin 0.5 mA
Total device current1)
1) Itot = Current into Out + Current into VCC
Itot 12 mA
Input power2)
2) Valid for:
a) ZL = 50 Ω, ZS = 50 Ω, VCC = 2.7 V, Vout = 2.7 V, VGS = 0.0 V, GND = 0.0 V
b) ZL = 50 Ω, ZS = 50 Ω, VCC =0.0V, Vout = 0.0 V, VGS = 2.7 V, GND = 0.0 V
Pin 8dBm
Total power dissipation, TS < 125 °C3)
3) TS is measured on the ground lead at the soldering point
Ptot 50 mW
Junction temperature TJ150 °C
Operating temperature range TOP -40... 85 °C
Storage temperature range TSTG -65... 150 °C
Table 2 Thermal resistance
Parameter Symbol Value Unit
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance
RthJS 220 K/W
Data Sheet 6 Rev. 2.3, 2011-09-02
BGA428
Electrical Characteristics
2 Electrical Characteristics
2.1 Electrical characteristics at TA = 25 °C (measured in test circuit specified in
Figure 2), VCC = 2.7 V, Frequency = 1.8 GHz, unless otherwise specified
Figure 2 Test Circuit for Electrical Characteristics and S-Parameter
Table 3 Electrical Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Maximum available power gain GMA 20 dB
Noise figure (ZS = 50 Ω) NF 1.4 dB
Input power at 1 dB gain compression P-1dB -19 dBm
Input third order intercept point IIP3-9 dBm
Total device current Itot 8.2 mA
Insertion loss in gain-step-mode LGS 13.5 dB VCC =0.0V,
VCTRL =2.7V,
RCRRL =3kΩ
BGA428_Test_Circuit.vsd
Top View
Bias-T
Bias-T
47pF 180pF 100nF 2.7V
Out
In
Reference Plane
Reference Plane
V
CTRL
GS
GND
IN V
CC
OUT
R
CTRL
=3kΩ
BGA428
Electrical Characteristics
Data Sheet 7 Rev. 2.3, 2011-09-02
Table 4 S-Parameter at 2.7 V (see Electrical Characteristics for conditions)
Frequency
[GHz]
S11
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
0.100 0.6756 -31.7 58.775 -19.6 0.0005 153.5 0.9491 -3.9
0.200 0.5936 -53.6 47.806 -43.1 0.0014 138.4 0.9327 -6.3
0.300 0.5150 -71.4 39.232 -59.5 0.0021 119.0 0.9174 -8.3
0.400 0.4587 -86.6 31.740 -71.8 0.0028 104.9 0.9035 -10.3
0.600 0.4004 -110.7 23.868 -89.6 0.0042 105.9 0.8807 -14.0
0.800 0.3743 -129.1 18.509 -103.2 0.0063 94.3 0.8593 -17.7
1.000 0.3743 -143.0 14.825 -114.5 0.0082 92.4 0.8352 -21.4
1.200 0.3816 -154.5 12.288 -124.7 0.0093 87.2 0.8116 -25.1
1.400 0.3922 -164.4 10.353 -134.2 0.0110 85.3 0.7865 -28.7
1.600 0.4086 -1.72.4 8.879 -143.2 0.0132 79.4 0.7597 -32.2
1.800 0.4265 -178.9 7.732 -151.4 0.0141 79.4 0.7309 -36.0
1.900 0.4314 -178.8 7.214 -155.2 0.0146 76.1 0.7199 -37.5
2.000 0.4371 176.1 6.771 -159.1 0.0150 77.0 0.7097 -39.1
2.200 0.4505 171.2 5.976 -166.6 0.0169 75.2 0.6791 -42.3
2.400 0.4640 167.2 5.298 -173.5 0.0181 73.2 0.6593 -45.6
3.000 0.4935 155.9 3.935 167.0 0.0217 68.3 0.5925 -53.3
4.000 0.5181 141.2 2.605 139.2 0.0282 65.1 0.5284 -64.9
5.000 0.5202 126.9 1.911 113.6 0.0319 62.2 0.4829 -75.1
6.000 0.5128 110.0 1.479 89.9 0.0489 56.0 0.4323 -81.7
Data Sheet 8 Rev. 2.3, 2011-09-02
BGA428
Electrical Characteristics
2.2 Application Circuit Characteristics (measured in test circuit specified in
Figure 3), TA = 25 °C,VCC = 2.7 V, Frequency = 1.85 GHz, unless otherwise
specified
Figure 3 Application Circuit for 1850 MHz
Table 5 Application Circuit Characteristics
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Insertion power gain |S21|219 dB
Noise figure (ZS = 50 Ω) NF 1.4 dB
Input power at 1 dB gain compression P-1dB -19 dBm
Input third order intercept point IIP3-9 dBm
Total device current Itot 8.2 mA
Insertion loss in gain-step-mode LGS 13.5 dB VCC =0.0V,
VCTRL =2.7V,
RCRRL =3kΩ
BGA428_Application_Circuit.vsd
GS
In
GND
Out
Vcc
Supply
47pF 180pF
RFout
3.9nH
0.9pF
150pF
3kΩ
RFin
BGA428
V
CTRL
BGA428
Measured Parameters
Data Sheet 9 Rev. 2.3, 2011-09-02
3 Measured Parameters
Refer to the application circuit given in Figure 3
Power Gain |S21|2=f(f)
VCC = 2.7V, VOut=2.7V
0 1 2 3 4 5 6
−25
−20
−15
−10
−5
0
5
10
15
20
Frequency [GHz]
Insertion Gain [dB]
Power Gain |S21|2=f(f)
VCC = 2.7V, VOut=2.7V
1.7 1.8 1.9 2 2.1
15
16
17
18
19
20
21
22
23
Frequency [GHz]
Insertion Gain [dB]
Off−Gain |S21|2=f(VCTRL)
VCC = 0.0V, VOut=0.0V,RCTRL=2.7kΩ
2 2.2 2.4 2.6 2.8 3 3.2
−20
−19
−18
−17
−16
−15
−14
−13
−12
−11
−10
VCTRL [V]
Insertion Gain [dB]
1800MHz
1990MHz
Matching |S11|,|S22|=f(f)
VCC = 2.7V, VOut=2.7V
1 1.5 2 2.5 3
−30
−25
−20
−15
−10
−5
0
Frequency [GHz]
|S11|, |S22| [dB]
S11
S22
Data Sheet 10 Rev. 2.3, 2011-09-02
BGA428
Measured Parameters
Input Compression Point P−1dB=f(f)
1800 1850 1900 1950 2000
−20
−19.5
−19
−18.5
−18
−17.5
−17
−16.5
Frequency [MHz]
Input Compression Point [dBm]
VCC=2.4V
VCC=2.7V
VCC=2.85V
Device Current I=f(ϑ)
VCC=2.7V, VOut=2.7V
−20 0 20 40 60 80
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
9
Temperature [°C]
Device Current [mA]
Insertion Gain |S21|2=f(ϑ)
VCC=2.7V, VOut=2.7V
−20 0 20 40 60 80
15
16
17
18
19
20
21
22
23
24
25
Temperature [°C]
|S21|2 [dB]
f=1800MHz
f=1990MHz
BGA428
Package Information
Data Sheet 11 Rev. 2.3, 2011-09-02
4 Package Information
Figure 4 Package Outline SOT363
Figure 5 Tape for SOT363
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
GPS05604
0.15
±0.1
1.25
0.1 MAX.
0.9±0.1
A
-0.05 6x 0.1 M
0.650.65
2.1±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
0.2
4
2.15 1.1
8
2.3
Pin 1
marking CSOG5902
