BFR380L3 NPN Silicon RF Transistor * High current capability and low noise figure for wide dynamic range 3 * Low voltage operation 1 2 * Ideal for low phase noise oscillators up to 3.5 GHz * Low noise figure: 1.1 dB at 1.8 GHz * Pb-free (RoHS compliant) package * Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR380L3 Marking FC Pin Configuration 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 14 Total power dissipation1) Ptot 380 mW Junction temperature TJ 150 C Storage temperature T Stg V mA TS 96C -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 140 K/W 1T S is measured on the collector lead at the soldering point to the pcb calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2For 1 2010-05-28 BFR380L3 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. 6 9 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 5 V, VBE = 0 - 1 30 VCE = 15 V, VBE = 0 - - 1000 ICBO - - 30 IEBO - 10 500 hFE 90 120 160 Collector-base cutoff current VCB = 5 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 40 mA, VCE = 3 V, pulse measured 2 2010-05-28 BFR380L3 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 11 14 - Ccb - 0.45 0.8 Cce - 0.18 - Ceb - 1 - 0.5 1.1 2.1 11.5 14 16.5 7.5 10 12.5 GHz IC = 40 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum Noise figure NFmin dB IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum available 1) G ma IC = 40 mA, VCE = 3 V, Z S = ZSopt, ZL = ZLopt, f = 1.8 GHz f = 3 GHz |S 21e|2 Transducer gain dB IC = 40 mA, VCE = 3 V, Z S = ZL = 50 , f = 1.8 GHz 9.5 11.5 13.5 f = 3 GHz 5.5 7.5 9.5 - 29.5 - ZS = ZL = 50 - 16 - ZS = ZSopt, ZL = ZLopt - 19.5 - Third order intercept point at output2) IP 3 dBm VCE = 3 V, I C = 40 mA, f = 1.8 GHz, ZS = ZL = 50 1dB compression point at output P-1dB IC = 40 mA, VCE = 3V, f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 1G 3 2010-05-28 BFR380L3 SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFR380L3 SPICE model in the internet in MWO- and ADS- format which you can import into these circuit simulation tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFR380L3 SPICE model reflects the typical DC- and RF-performance with high accuracy. 4 2010-05-28 Package TSLP-3-1 BFR380L3 Package Outline Bottom view 0.4 +0.1 0.6 0.05 0.5 0.035 2 1 0.05 3 0.65 0.05 3 1) 2 1 1) 0.05 MAX. 0.35 0.05 Pin 1 marking 2 x 0.15 0.035 2 x 0.25 0.035 1 0.25 0.035 1) Top view 1) 1) Dimension applies to plated terminal Foot Print R0.1 0.2 0.225 0.2 0.225 0.315 0.35 1 0.3 0.945 0.35 0.45 0.275 0.6 0.355 For board assembly information please refer to Infineon website "Packages" 0.17 0.15 Copper Solder mask Stencil apertures Marking Layout (Example) BFR193L3 Type code Pin 1 marking Laser marking Standard Packing Reel o180 mm = 15.000 Pieces/Reel 0.5 1.16 Pin 1 marking 8 4 0.76 5 2010-05-28 BFR380L3 Datasheet Revision History: 27 May 2010 This datasheet replaces the revisions from 10 July 2008 and 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revisions: 10 July 2008 and 30 March 2007 Page Subject (changes since last revision) 1 Datasheet has final status 2 Typical values for leakage currents included, values for maximum leakage currents reduced 6 2010-05-28 BFR380L3 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2010-05-28