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1
BFR380L3
2
3
1
NPN Silicon RF Transistor
• High current capability and low noise figure for
wide dynamic range
• Low voltage operation
• Ideal for low phase noise oscillators up to 3.5 GHz
• Low noise figure: 1.1 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR380L3 FC 1 = B 2 = E 3 = C TSLP-3-1
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC80 mA
Base current IB14
Total power dissipation1)
TS ≤ 96°C
Ptot 380 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 140 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 Thermal Resistance
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BFR380L3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 5 V, VBE = 0
VCE = 15 V, VBE = 0
ICES
-
-
1
-
30
1000
nA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 30
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - 10 500
DC current gain
IC = 40 mA, VCE = 3 V, pulse measured
hFE 90 120 160 -
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BFR380L3
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 40 mA, VCE = 3 V, f = 1 GHz
fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.45 0.8 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.18 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 1 -
Minimum Noise figure
IC = 8 mA, VCE = 3 V, ZS = ZSopt ,
f = 1.8 GHz
NFmin 0.5 1.1 2.1 dB
Power gain, maximum available1)
IC = 40 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
f = 3 GHz
Gma
11.5
7.5
14
10
16.5
12.5
Transducer gain
IC = 40 mA, VCE = 3 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
f = 3 GHz
|S21e|2
9.5
5.5
11.5
7.5
13.5
9.5
dB
Third order intercept point at output2)
VCE = 3 V, IC = 40 mA, f = 1.8 GHz,
ZS = ZL = 50Ω
IP3- 29.5 - dBm
1dB compression point at output
IC = 40 mA, VCE = 3V, f = 1.8 GHz
ZS = ZL = 50Ω
ZS = ZSopt, ZL = ZLopt
P-1dB
-
-
16
19.5
-
-
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFR380L3
SPICE Parameter
For the SPICE model as well as for the S-parameters (including noise parameters)
please refer to our internet website www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design.
You find the BFR380L3 SPICE model in the internet in MWO- and ADS- format which
you can import into these circuit simulation tools very quickly and conveniently.
The simulation data have been generated and verified using typical devices.
The BFR380L3 SPICE model reflects the typical DC- and RF-performance with
high accuracy.
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BFR380L3
Package TSLP-3-1
2
3
1
0.4
+0.1
BFR193L3
Type code
Pin 1 marking
Laser marking
0.76
4
1.16
0.5
Pin 1
marking
8
Reel ø180 mm = 15.000 Pieces/Reel
For board assembly information please refer to Infineon website "Packages"
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Stencil aperturesCopper Solder mask
0.275
0.2
0.315
0.945
0.45
0.17
0.355
0.2
0.35
0.225
1
0.6
0.225
0.15
0.35
0.3
R0.1
1
2
±0.05
0.35
±0.035
2 x 0.15
1)
Top view Bottom view
1) Dimension applies to plated terminal
±0.035
0.5
1)
±0.05
0.6
3
±0.05
0.65
±0.035
2x
0.25
1)
±0.035
0.25
1)
1
±0.05
Pin 1
marking
0.05 MAX.
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BFR380L3
Datasheet Revision History: 27 May 2010
This datasheet replaces the revisions from 10 July 2008 and 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revisions: 10 July 2008 and 30 March 2007
Page Subject (changes since last revision)
1 Datasheet has final status
2 Typical values for leakage currents included, values for maximum leakage
currents reduced
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BFR380L3
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
