ZXTD617MC
Document Number DS31930 Rev. 3 - 2 1 of 7
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ZXTD617MC
DUAL 15V NPN LOW SATURATION TRANSISTORS
Features and Benefits
• BVCEO > 15V
• I
C = 4.5A Continuous Collector Current
• Low Saturation Voltage (100mV max @ 1A)
• R
SAT = 45 mΩ for a Low Equivalent On-Resistance
• h
FE specified up to 12A for high current gain hold up
• Dual NPN saving footprint and component count
• Low profile 0.8mm high package for thin applications
• R
θJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN3020B-8
• Case Material: Molded Plastic. “Green” Molding Compound.
• Terminals: Pre-Plated NiPdAu leadframe
• UL Flammability Rating 94V-0
• Nominal Package Height: 0.8mm
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC-DC Converters
• Charging circuits
• Motor control
• Power switches
• Portable applications
Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTD617MCTA DAA 7 8 3000
Notes: 1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
DAA = Product type marking code
Top view, dot denotes pin 1
Equivalent Circuit
Top View Bottom View
DFN3020B-8
NPN Transistor NPN Transistor
C
2
E2
B2
C
1
E
1
B1
Bottom View
Pin-Out
C2 C2 C1 C1
E2 B2 E1 B1
C2 C1
Pin 1
DAA
ZXTD617MC
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 15
Emitter-Base Voltage VEBO 7
Peak Pulse Current ICM 15
A
Continuous Collector Current (Notes 3 & 6) IC 4.5
(Notes 4 & 6) 5
Base Current IB 1
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Notes 3 & 6)
PD
1.5
12
W
mW/°C
(Notes 4 & 6) 2.45
19.6
(Notes 5 & 6) 1.13
8
(Notes 5 & 7) 1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 3 & 6)
RθJA
83.3
°C/W
(Notes 4 & 6) 51.0
(Notes 5 & 6) 111
(Notes 5 & 7) 73.5
Thermal Resistance, Junction to Lead (Notes 6 & 8) R
θ
JL 17.1
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 3. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half.
4. Same as note (3), except the device is measured at t <5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB w ith high cov e rage of single sided 1oz copper.
6. For a dual device with one active die.
7. For dual device with 2 active die running at equal power.
8. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
ZXTD617MC
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Thermal Characteristics
0.1 1 10
0.01
0.1
1
10
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
0.1 1 10 100
0
25
50
75
100
125
150
175
200
225
0.1 1 10 100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
8sqcm 2oz Cu
One active die 100us
100ms
1s
VCE(SAT)
Limited
1ms
Safe O p erating Area
Single Pulse, Tamb=25°C
DC
10ms
IC Collector Current (A)
VCE Collector-Emitter Voltage (V)
10sqcm 1oz Cu
On e a ctive die
8sqcm 2oz Cu
On e a ctive die
10 sqcm 1o z C u
Two a ctive die
Derating Curve
Max Power Dissipation (W)
Temperature (°C)
8sqcm 2oz Cu
One active die
D=0.2
D=0.5
D=0.1
Transient Therma l Imp ed an ce
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Puls e Width (s )
1oz Cu
Two active die
1oz Cu
One active die
2oz Cu
One active die 2oz Cu
Two active die
Therm al Resistance v B o ard A rea
Thermal Resistance (°C/W)
Board Cu Area (s qcm)
1oz Cu
Two a ctive die
2oz Cu
Two a ctive die
1oz Cu
One active die
2oz Cu
One active die
Power Dissipation v Board Area
Tamb=25°C
Tj max=150°C
Continuous
PD Dissipation (W)
Board Cu Area (sqcm)
ZXTD617MC
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 40 70 - V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 9) BVCEO 15 18 - V
IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 7 8.2 - V
IE = 100µA
Collector Cutoff Current ICBO - - 100 nA
VCB = 30V
Emitter Cutoff Current IEBO - - 100 nA VEB = 6V
Collector Emitter Cutoff Current ICES - - 100 nA
VCES = 12V
Static Forward Current Transfer Ratio (Note 9) hFE
200
300
200
150
-
415
450
320
240
80
-
-
-
-
-
-
-
-
-
-
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 12A, VCE = 2V
Collector-Emitter Saturation Voltage (Note 9) VCE(sat)
-
-
-
-
-
8
70
165
240
200
14
100
200
310
-
mV
mV
mV
mV
mV
IC =0.1A, IB = 10mA
IC = 1A, IB = 10mA
IC = 3A, IB = 50mA
IC =4.5A, IB = 50mA
IC =4.5A, IB= 100mA
Base-Emitter Turn-On Voltage (Note 9) VBE
(
on
)
- 0.88 0.96 V
IC = 4.5A, VCE = 2V
Base-Emitter Saturation Voltage (Note 9) VBE
(
sat
)
- 0.94 1.05 V
IC = 4.5A, IB= 50mA
Output Capacitance Cobo - 30 40 pF
VCB = 10V. f = 1MHz
Transition Frequency fT 80 120 - MHz
VCE = 10V, IC = 50mA,
f = 100MHz
Turn-on Time ton - 120 - ns
VCC = 10V, IC = 1A
IB1 = IB2 = 10mA Turn-off Time toff - 160 - ns
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
ZXTD617MC
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Typical Electrical Characteristics
1m 10m 100m 1 10
1m
10m
100m
1
1m 10m 100m 1 10
0.00
0.05
0.10
0.15
0.20
0.25
1m 10m 100m 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1m 10m 100m 1 10
0.4
0.6
0.8
1.0
1m 10m 100m 1 10
0.2
0.4
0.6
0.8
1.0
0
90
180
270
360
450
540
630
VCE(SAT) v IC
Tamb=25°C
IC/IB=100
IC/IB=50
IC/IB=10
VCE(SAT) (V)
IC Collector C urre nt (A)
VBE(SAT) v IC
IC/IB=50
100°C
25°C
-55°C
VCE(SAT) (V)
IC Collector C urre nt (A)
hFE v IC
VCE=2V
-55°C
25°C
100°C
Normalised Gain
IC Collector Current (A)
25°C
VCE(SAT) v IC
IC/IB=50
100°C
-55°C
VBE(SAT) (V)
IC Collector C urre nt (A)
VBE(ON) v IC
VCE=2V
100°C
25°C
-55°C
VBE(ON) (V )
IC Collector C urre nt (A)
Typical Gain (hFE)
ZXTD617MC
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Package Outline Dimensions
Suggested Pad Layout
DFN3020B-8
Dim Min Max Typ
A 0.77 0.83 0.80
A1 0 0.05 0.02
A3 - - 0.15
b 0.25 0.35 0.30
D 2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e - - 0.65
E 1.95 2.075 2.00
E2 0.43 0.63 0.53
L 0.25 0.35 0.30
Z - - 0.375
All Dimensions in mm
Dimensions Value (in mm)
C 0.650
G 0.285
G1 0.090
X 0.400
X1 1.120
Y 0.730
Y1 0.500
Y2 0.365
be
E2
D2
L
D
E
A
Z
A1
A3
D4 D4
C
X1
G1
X
Y1
Y
Y2
G
ZXTD617MC
Document Number DS31930 Rev. 3 - 2 7 of 7
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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changes without further notice to this doc ument and an y product described herein. Diodes Incorporat ed does not assu me any liability arising
out of the application or use of this document or any product descr ibed herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
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out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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markings noted herein may also be covered by one or more United States, international or foreign trademarks.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perfo rm can be re asonabl y expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes I ncorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
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Incorporated and its representatives against any d amages arising out of the use of Diodes Incorpor ated products in such safety-critical, life
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