Preliminary Technical Information PolarHTTM Power MOSFET IXTC 62N15P IXTR 62N15P VDSS ID25 RDS(on) (Electrically Isolated Tab) = 150 V = 36 A 45 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M 150 150 V V VGS VGSM Continuous Transient 20 30 V V ID25 IDM TC = 25 C TC = 25 C, pulse width limited by TJM 36 150 A A IAR EAR EAS TC = 25 C TC = 25 C TC = 25 C 50 30 1.0 A mJ J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 10 10 V/ns PD TC = 25 C 150 W -55 ... +175 150 -55 ... +150 C C C 300 C 11..65 / 2.5..15 20..120 / 4.5..25 N/lb N/lb 3 5 g g TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s FC Mounting force Weight ISOPLUS220 ISOPLUS247 ISOPLUS220 ISOPLUS247 Symbol Test Conditions (TJ = 25 C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 150 VGS(th) VDS = VGS, ID = 250 A 3.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 31 A, Note 1 ISOPLUS220 (IXTC) E153432 G G TJ = 125 C 100 nA 10 200 A A 45 m D S G = Gate S = Source Isolated back surface Isolated back surface D = Drain TAB = Drain Features l International standard isolated packages l UL recognized packages l l l V S ISOPLUS247 (IXTR) E153432 V 5.0 D l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages Easy to mount l Space savings l High power density l DS99622E(05/06) (c) 2006 IXYS All rights reserved IXTC 62N15P IXTR 62N15P Symbol Test Conditions Characteristic Values (TJ = 25 C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 31 A, Note 1 14 24 S 2250 pF 660 pF Crss 185 pF td(on) 27 ns Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss tr VGS = 10 V, VDS = 0.5 VDSS, ID = 62 A 38 ns td(off) RG = 10 (External) 76 ns 35 ns 70 nC 20 nC 38 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 31 A Qgd RthJC C/W 0.15 Source-Drain Diode Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. C/W 1.0 RthCS ISOPLUS220TM (IXTC) Outline Characteristic Values TJ = 25 C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 62 A ISM Repetitive 150 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25 A, -di/dt = 100 A/s 150 ns QRM VR = 100 V, VGS = 0 V 2.0 C Ref: IXYS CO 0177 R0 ISOPLUS247 (IXTR) Outline Note 1: Pulse test, t 300 s, duty cycle d 2 %; 2: Test current I IT = 62 A. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734B2