© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 150 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ150 V
VGS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C36A
IDM TC= 25°C, pulse width limited by TJM 150 A
IAR TC= 25°C50A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 10 Ω
PDTC= 25°C 150 W
TJ-55 ... +175 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
FCMounting force ISOPLUS220 11..65 / 2.5..15 N/lb
ISOPLUS247 20..120 / 4.5..25 N/lb
Weight ISOPLUS220 3 g
ISOPLUS247 5 g
G = Gate D = Drain
S = Source TAB = Drain
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 150 V
VGS(th) VDS = VGS, ID = 250 µA 3.0 5.0 V
IGSS VGS = ± 20 VDC, VDS = 0 ± 100 nA
IDSS VDS = VDSS 10 µA
VGS = 0 V TJ = 125°C 200 µA
RDS(on) VGS = 10 V, ID = 31 A, Note 1 45 m Ω
PolarHTTM Power
MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
IXTC 62N15P
IXTR 62N15P
VDSS = 150 V
ID25 =36 A
RDS(on) ≤≤
≤≤
≤45 m ΩΩ
ΩΩ
Ω
DS99622E(05/06)
GDS
ISOPLUS220 (IXTC)
E153432
Isolated back surface
Features
lInternational standard isolated
packages
lUL recognized packages
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
lFast intrinsic diode
Advantages
lEasy to mount
lSpace savings
lHigh power density
GDS
ISOPLUS247 (IXTR)
E153432
Isolated back surface
Preliminary Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTC 62N15P
IXTR 62N15P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 31 A, Note 1 14 24 S
Ciss 2250 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 660 pF
Crss 185 pF
td(on) 27 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 62 A 38 ns
td(off) RG = 10 Ω (External) 76 ns
tf35 ns
Qg(on) 70 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 31 A 20 nC
Qgd 38 nC
RthJC 1.0 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 62 A
ISM Repetitive 150 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 25 A, -di/dt = 100 A/µs 150 ns
QRM VR = 100 V, VGS = 0 V 2.0 µC
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2: Test current I IT = 62 A.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
ISOPLUS220TM (IXTC) Outline
Ref: IXYS CO 0177 R0
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
ISOPLUS247 (IXTR) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
