© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 9 1Publication Order Number:
2N5655/D
2N5655, 2N5657
Plastic NPN Silicon
High−Voltage Power
Transistor
These devices are designed for use in line−operated equipment such
as audio output amplifiers; low−current, high−voltage converters; and
AC line relays.
Features
•Excellent DC Current Gain −
hFE = 30−250 @ IC = 100 mAdc
•Current−Gain − Bandwidth Product −
fT = 10 MHz (Min) @ IC = 50 mAdc
•Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
2N5655
ÎÎÎÎ
ÎÎÎÎ
2N5657
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎ
ÎÎÎ
250
ÎÎÎÎ
ÎÎÎÎ
350
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
ÎÎÎ
ÎÎÎ
VCB
ÎÎÎ
ÎÎÎ
275
ÎÎÎÎ
ÎÎÎÎ
375
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.0
ÎÎ
ÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
Peak
ÎÎÎ
Î
Î
Î
ÎÎÎ
IC
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
0.5
1.0
ÎÎ
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎ
ÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.0
ÎÎ
ÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
20
0.16
ÎÎ
ÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
Î
Î
Î
ÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎ
ÎÎ
ÎÎ
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎ
ÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
Junction−to−Case
ÎÎÎ
Î
Î
Î
ÎÎÎ
qJC
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
6.25
ÎÎ
ÎÎ
ÎÎ
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250−350 VOLTS, 20 WATTS
MARKING DIAGRAM
TO−225AA
CASE 77−09
STYLE 1
Y = Year
WW = Work Week
2N565x = Device Code
x = 5 or 7
G = Pb−Free Package
2N5657 TO−225 500 Units / Bulk
2N5657G TO−225
(Pb−Free) 500 Units / Bulk
Device Package Shipping
2N5655 TO−225 500 Units / Bulk
2N5655G TO−225
(Pb−Free) 500 Units / Bulk
ORDERING INFORMATION
YWW
2
N565xG
2N5655, 2N5657
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage 2N5655
(IC = 100 mAdc (inductive), L = 50 mH) 2N5657
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
Î
250
350
ÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Breakdown Voltage 2N5655
(IC = 1.0 mAdc, IB = 0) 2N5657
ÎÎÎÎÎ
ÎÎÎÎÎ
V(BR)CEO
250
350
−
−
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) 2N5655
(VCE = 250 Vdc, IB = 0) 2N5657
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
Î
−
−
ÎÎ
0.1
0.1
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc) 2N5655
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc) 2N5657
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5655
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5657
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
Î
Î
Î
−
−
−
−
ÎÎ
ÎÎ
ÎÎ
0.1
0.1
1.0
1.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0) 2N5655
(VCB = 375 Vdc, IE = 0) 2N5657
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
Î
−
−
ÎÎ
10
10
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
−
10
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
Î
Î
25
30
15
5.0
ÎÎ
ÎÎ
−
250
−
−
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage (Note 3)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
(IC = 500 mAdc, IB = 100 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
Î
Î
−
−
−
ÎÎ
ÎÎ
1.0
2.5
10
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Voltage (IC = 100 mAdc, VCE = 10 Vdc) (Note 3)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE
−
1.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
10
−
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
−
25
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
20
−
ÎÎÎ
ÎÎÎ
−
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
40
025 50 75 100 150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
30
20
10
PD, POWER DISSIPATION (WATTS)
125
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
Figure 2. Sustaining Voltage Test Circuit
50 mH
200
50 V
+
−
+
X
Y
TO SCOPE
Hg RELAY
300 1.0
6.0 V
2N5655, 2N5657
http://onsemi.com
3
1.0
20
Figure 3. Active−Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.5
0.2
0.1
0.01 30 40 60 100 200 300 400 600
Second Breakdown Limit
Thermal Limit @ TC = 25°C
Bonding Wire Limit
IC, COLLECTOR CURRENT (AMP)
Curves apply below rated VCEO
TJ = 150°C
d-
c
1.0 ms
0.05
0.02
10 ms
2N5655
2N5657
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mA)
300
101.0
200
100
70
50
30
2.0 3.0 5.0 7.0 30 50 70 100 200 300 50010 20
hFE, DC CURRENT GAIN
20
TJ = +150°C
+25°C
−55 °C
VCE = 10 V
VCE = 2.0 V
+100°C
1.0
10
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
020 50 100 200 300 500
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
0.2
30
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
IC/IB = 5.0
TJ = +25°C
Figure 5. “On” Voltages
2N5655, 2N5657
http://onsemi.com
4
300
0.1
VR, REVERSE VOLTAGE (VOLTS)
10 2.0 5.0 10 20 50 1000.2 0.5 1.0
C, CAPACITANCE (pF)
200
70
50
30
Cib
Cob
100
20
TJ = +25°C
Figure 6. Capacitance
10
1.0
Figure 7. Turn−On Time
IC, COLLECTOR CURRENT (mA)
t, TIME (s)μ
5.0
2.0
1.0
0.5
0.2
0.1
0.01 2.0 5.0 10 20 50 100 500
0.05
0.02
200
trIC/IB = 10
VCC = 300 V, VBE(off) = 2.0 V
(2N5657, only)
VCC = 100 V, VBE(off) = 0 V
td
10
1.0
Figure 8. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
t, TIME (s)μ
5.0
2.0
1.0
0.5
0.2
0.1 2.0 5.0 10 20 50 100 500200
ts
IC/IB = 10
tf
VCC = 100 V
VCC = 300 V
(Type 2N5657, only)
2N5655, 2N5657
http://onsemi.com
5
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
−A− M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 −−− 1.02 −−−
__
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