Si SGS-THOMSON MICROELECTRONICS 2N 682 ---> 2N 692 FEATURES a HIGH SURGE CAPABILITY ws HIGH ON-STATE CURRENT ws HIGH STABILITY AND RELIABILITY DESCRIPTION The 2N 682 ---> 2N 692 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled To 48 Rectifiers is designed for power supplies up to (Metal) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) | RMS on-state current Te = 80C 25 A (180 conduction angle) IT(AV) Average on-state current Te = 80C 16 A (180 conduction angle, single phase circuit) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 210 A ( Tj initial = 25C ) tp = 10 ms 200 lt Ht value tp = 10 ms 200 Aes di/dt Critical rate of rise of on-state current 100 Alus Gate supply : |G = 400 mA dig/dt = 1 A/us Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to+ 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symboi Parameter 2N Unit 682 683 685 688 690 692 VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 Vv VaRM | Tj= 125C duly 1991 Me 7929237 OO594b3 010 v4 135 2N 682 ---> 2N 692 THERMAL RESISTANCES Symbol Parameter Value Unit Rth (c-h) |Contact (case to heatsink) 0.4 C/W Rth (j-c) DC | Junction to case for DC 1.5 C/W GATE CHARACTERISTICS (maximum values) PG (Av) =1W PGM = 40W (ip = 20 ps) IFG@M = 8A (ip = 20us) VFGM = 16V (tp=20yus) VRGM= 5V. ELECTRICAL CHARACTERISTICS Symbol Test Conditions Value Unit IGT Vp=12V (DC) RL=33Q _Tiz25C MAX 40 mA VGT Vp=12V (DC) RL=330 Tjx25C | MAX 1.5 Vap VpD=VDRM > RL=3.3kQ Tj= 125C | MIN 0.25 v tgt Vp=VpRM_ Iq = 200mA Tj=25C TYP 2 ps dig/dt = 1.5A/us IL Ige 1.2 IGT Tj=25C TYP 50 mA IH It=500mMA gate open Tj=25C TYP 30 mA VTM ITM= 50A_tp= 380us Tj=25C MAX 2 Vv IDRM VDRM Rated Tj=25C MAX 0.02 mA 'RRM VRRM Rated Te 125C 3 dV/dt Linear slope up to Vp=67%VDAM Tj= 125C | MIN 200 Vius gate open Tq Vp=67%VpRM 'lTM=50A VpR=50V Tj= 125C } TYP 100 ys ditM/dt=30 A/us dVp/dt= 20V/ys 2/4 136 Me 7929237? OOST4bY Te? Fig.1 : Maximum average power dissipation versus average on-state current. P (W) Itav) (A) 0 5 10 15 20 25 Fig.3 : Average on-state current versus case temperature. ' tayy (A) Tcase("C) o 26 50 76 160 126 Fig.5 : Relative variation of gate trigger current versus junction temperature. IgtlTy] InLT 3] fgtTj=25C In[Tj=25 C] 2.5 2 Igt +5e> LS 9 a, 1 ih SS PRE P| Ph os) t te Ty (C) 1 1 t i 0 -40-30-20-10 0 10 20 306 40 50 60 70 80 90 100110120130 2N 682 ---> 2N 692 Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tease ( C} 35 > =180 C/W 30 C/W 475 C/W 25 C/W 4h a5 20 95 15 105 10 115 5T Tamb (C) 125 0 20 40 60 80 100 120 140 Fig.4 Thermal transient impedance junction to ambient versus pulse duration. Zth j-c ( C/W) 10E+01 1.0&+00 ' ' t (s) +0E-04 10E-03 10E-02 10E-01 10E+00 VOE+O1 1.0E-01 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ltguy (A) 250 Ty initial = 2 o-4 +t a 4 | 200 | | | 150 100 1 aan | rhs 50 T oti Y Number of cycles | Ly Q Lop ei | Ln 1 10 100 1000 3/4 Me 7929237 OOSI4LS Ib3 137 2N 682 ---> 2N 692 Fig.7 : Non repetitive surge peak on-state current for a Fig.8 : On-state characteristics (maximum values). sinusoidal pulse with width : t < 10 ms, and corresponding value of [2t. I7su (A). 't (A's) Uty (A) 1000 4000 Tj initial = 25C Ty initial 26C 100 Tj max Tj max 10 Vio = 1.2V Rt =0.015 a VmM(V) 100 1 1 1 2 3 4 5 PACKAGE MECHANICAL DATA (in millimeters) TO 48 Metal @ 2=0.2 @4402 _\ NE + rT 4 _ | 125 n 3 to | | maxi i =] = r 9h a 8 g | = pat, EI | it | a | \. 9/16" over flats 6 sided H| & ! \ <n: | a ar MS 1/4 - 28 UNF 16,5 maxi Cooling method : by conduction (method C) Marking : type number Weight : 13.5 g Polarity : Anode (or A2) to case Stud torque : 3.5mAN min / 3.8 MAN max 4/4 BB 79292397? OOSTYLL OTT 138