GP1S036HEZ
1
Sheet No.: D3-A05601EN
Date Oct. 3. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
GP1S036HEZ Phototransistor Output,
Transmissive Photointerrupter
with Tilt Direction (4-direction)
Detecting
■Description
GP1S36J0000F is a compact-package, phototransis-
tor output, transmissive photointerrupter, with opposing
emitter and detector in a molding that provides a ball
built-in case sensing. The compact package series is a
result of unique technology combing transfer and injec-
tion molding.
This is a 2-phase output device, suitable for detection
of the position (4 direction).
■Features
1. Transmissive with phototransistor output
2. Highlights :
• Built-in a ball (2 phase output)
• Compact
• PWB mounting type
• 4-direction detection
3. Lead free and RoHS directive compliant
■Agency approvals/Compliance
1. Compliant with RoHS directive
■Applications
1. General purpose detection of device direction.
2. Example : Camera, DSC, Camcorder, Robot
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Sheet No.: D3-A05601EN
GP1S036HEZ
■Internal Connection Diagram
PT2
PT1
1
1
2
2
3
3
Anode
Cathode
Emitter 2
4
4
5
5
Emitter 1
Collector
4.5
Top View
or show GATE Position
∗3.35 ∗1.27 ∗1.27
4.6
0.15 0.4
52.8±0.3
1
2
3
5
4
Sharp mark
“S”
Date code
■Outline Dimensions (Unit : mm)
Product mass : approx. 0.2g
• Unspecifi ed tolerance : ±0.2mm
• The dimensions indicated by ∗ refer
to those measured from the lead base.
• Burr is not included in the dimensions.
Burr's dimensions : 0.15MAX.
Plating material : SnCu (Cu : TYP. 2%)
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Sheet No.: D3-A05601EN
GP1S036HEZ
repeats in a 10 year cycle
Date code (2 digit)
1st digit 2nd digit
Year of production Month of production
A.D. Mark Month Mark
2000 0 1 1
2001 1 2 2
2002 2 3 3
2003 3 4 4
2004 4 5 5
2005 5 6 6
2006 6 7 7
2007 7 8 8
2008 8 9 9
2009 9 10 X
2010 0 11 Y
: : 12 Z
Country of origin
Japan, China
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Sheet No.: D3-A05601EN
GP1S036HEZ
(Ta=25˚C)
Parameter Symbol Rating Unit
Input
Forward current IF50 mA
Reverse voltage VR6V
Power dissipation P 75 mW
Output
Collector-emitter voltage
VCE1O
VCE2O
35 V
Emitter-collector voltage
VE1CO
VE2CO
6V
Collector current IC20 mA
Collector power dissipation PC75 mW
Total power dissipation Ptot 100 mW
Operating temperature Topr −25 to +85 ˚C
Storage temperature Tstg −40 to +100 ˚C
∗1Soldering temperature Tsol 260 ˚C
∗1 For MAX. 5s
■Absolute Maximum Ratings
■Electro-optical Characteristics (Ta=25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input Forward voltage VFIF=20mA −1.2 1.4 V
Reverse current IRVR=3V −−
10 μA
∗3Output Dark current ICEO VCE=20V −−
100 nA
∗3
Transfer
charac-
teristics
Collector current ICVCE=5V, IF=5mA 55 −300 μA
∗4Leak current ILEAK VCE=5V, IF=5mA −−
17 μA
Collector-emitter saturation voltage
VCE(sat) IF=10mA, IC=55μA−−
0.4 V
Response time Rise time trVCE=5V, IC=100μA, RL=1kΩ−50 150 μs
Fall time tf−50 150 μs
∗3 Output and coupling characteristics are common to the both phototransistors.
∗4 Characteristics except leak current is measured at θ=180, φ=0.
Leak current is the output current of transistor when θ=+90 or -90˚, φ=0 and IC=OFF.
1mmMIN.
Soldering area
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Sheet No.: D3-A05601EN
GP1S036HEZ
(IF=5mA, VCC=5V, φ≤±5)
θ0˚→30˚→60˚→120˚→150˚→210˚
IC1 OFF Indefi nite ON
IC2 OFF Indefi nite ON Indefi nite
θ→
240˚→300˚→330˚→360˚
IC1 ON Indefi nite OFF
IC2 Indefi nite OFF
IC1 : Output current of phototransistors PT1
IC2 : Output current of phototransistors PT2
θ : Device condition : Refer to the fi gure
φ : Device condition : Refer to the fi gure
ON :Output current of phototransistors : 55μA or more
OFF : Output current of phototransistors : 17μA or less
∗ Output of ON/OFF is under the condition that the device is in stationary state.
■Absolute Maximum Ratings
PT
Gravity direction
+
φ
−
Gravity direction
(Viewing from detecting side)
+
θ
−
Device state diagram
■Supplement
Principle of Tilt Detection (Viewing from detecting side)
PT1 output
PT2 output
(ON)(ON)
(ON)
(ON)
(ON)(OFF) (OFF)
(OFF) (OFF)
(ON)
PT1
PT2
PT2
Gravity direction
PT1
PT : Detected
PT : Undetected
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Sheet No.: D3-A05601EN
GP1S036HEZ
Fig.5 Collector Current vs.
Collector-emitter Voltage
Fig.6 Relative Collector Current vs.
Ambient Temperature
Fig.3 Forward Current vs. Forward Voltage Fig.4 Collector Current vs.
Forward Current
Fig.1 Forward Current vs.
Ambient Temperature
Fig.2 Power Dissipation vs.
Ambient Temperature
−25 0 25 50 75 100
0
10
20
30
40
50
60
85
Forward current IF (mA)
Ambient temperature Ta (˚C)
−25 0 25 50 75 100
0
20
15
40
60
Power dissipation P (mW)
80
75
85
100
120
Ambient temperature Ta (˚C)
Ptot
P, PC
0 0.5 1 1.5 2
1
10
100
2.5 3
25˚C
0˚C
−25˚C
50˚C
3.5
Forward current IF (mA)
Forward voltage VF (V)
Ta=75˚C
Collector current IC (mA)
0
1
0.8
0.6
0.4
0.2
1.2
1.4
1.6
1.8
2
2.2
010205 1525354530 40 50
Forward current IF (mA)
Ta=25C
VCE=5V
Collector current IC (mA)
0
1
0.8
0.6
0.4
0.2
1.2
1.4
1.6
1.8
2
2.2
024135796810
Collector-emitter Voltage VCE (V)
Ta=25C IF=50mA
IF=40mA
IF=30mA
IF=20mA
IF=10mA
IF=5mA
Relative collector current (%)
0
10
20
30
40
50
60
70
80
90
100
110
120
−250 255075
IF=5mA
VCE=5V
IC=100%
at Ta=25˚C
Ambient temperature Ta (C)
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Sheet No.: D3-A05601EN
GP1S036HEZ
Fig.7 Collector-emitter Saturation Voltage vs.
Ambient Temperature
Fig.8
Response Time vs. Load Resistance
Fig.9 Collector Dark Current vs.
Ambient Temperature
Fig.10
Test Circuit for Response Time
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Collector-emitter saturation voltage VCE(sat) (V)
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
−25 0 25 50 75 85
IF=10mA
IC=60μA
Ambient temperature Ta (C)
Collector dark current ICEO (A)
10-10
10-9
10-8
10-7
10-6
1007550250
Ambient temperature Ta (C)
VCE=20V
10%
Output
Input
90%
Input
Output
VCC
RL
RD
tdts
tf
tr
Response time tr, tf, td, ts (μs)
0.1
10
1
100
1 000
0.1 100101
Load resistance RL (kΩ)
VCE=5V
IC=100μA
Ta=25C
tr
td
ts
tf
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Sheet No.: D3-A05601EN
GP1S036HEZ
■Design Considerations
●Design guide
1) Prevention of malfunction
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
Please confi rm that there is no mis-operation by magnetic fi eld in use, for prevention of mis-operation by
magnetic fi eld.
Please don't let the device put in change of temperature that makes dew for prevention of mis-operation
by dew.
If the device is put in the change of temperature which makes dew, please leave the device for enough
time in the constant temperature for use.
This product is not designed against irradiation and incorporates non-coherent IRED.
●Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm) Response time (μs)
Phototransistor Silicon (Si) 800 700 to 1 200 12
• Photo emitter (qty. : 1)
Category Material Maximum light emitting
wavelength (nm) I/O Frequency (MHz)
Infrared emitting diode
(non-coherent) Gallium arsenide (GaAs) 950 0.3
• Material
Case Lead frame Lead frame plating Packing case Metal ball
Black polyphenylene
sulfi de resin (UL94 V-0) 42Alloy SnCu plating Polycarbonate Fe
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Sheet No.: D3-A05601EN
GP1S036HEZ
■Manufacturing Guidelines
●Soldering Method
Flow Soldering:
Soldering should be completed below 260˚C and within 5 s.
Please solder within one time.
Soldering area is 1mm or more away from the bottom of housing.
Please take care not to let any external force exert on lead pins.
Please don't do soldering with preheating, and please don't do soldering by refl ow.
Lead pin
Lead terminals of this product are tin copper alloy plated. Before usage, please evaluate solderability with
actual conditions and confi rm. And the uniformity in color for the lead terminals are not specifi ed.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since
the impact on the junction between the device and PCB varies depending on the tooling and soldering
conditions.
●Cleaning instructions
The device shall not be washed with washing material, for there is possibility to remain washing material in
internal space of this transmissive type photointerrupter.
●Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
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Sheet No.: D3-A05601EN
GP1S036HEZ
■Package specifi cation
●Sleeve package
Package materials
Sleeve : Polystyrene
Stopper : Styrene-Elastomer
Package method
MAX. 40 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless
stoppers.
MAX. 50 sleeves in one case.
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Sheet No.: D3-A05601EN
GP1S036HEZ
■Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifi cations, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specifi ed in the relevant specifi cation
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Offi ce automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffi c signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
[H181]
