1
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Typical applicaTion
DescripTion
165MHz, Rail-to-Rail Input
and Output, 0.95nV/Hz
Low Noise, Op Amp Family
The LT
®
6200/LT6201 are single and dual ultralow noise,
rail-to-rail input and output unity gain stable op amps
that feature 0.95nV/√Hz noise voltage. These amplifiers
combine very low noise with a 165MHz gain bandwidth,
50V/µs slew rate and are optimized for low voltage signal
conditioning systems. A shutdown pin reduces supply
current during standby conditions and thermal shutdown
protects the part from overload conditions.
The LT6200-5/LT6200-10 are single amplifiers optimized
for higher gain applications resulting in higher gain
bandwidth and slew rate. The LT6200 family maintains
its performance for supplies from 2.5V to 12.6V and are
specified at 3V, 5V and ±5V.
For compact layouts the LT6200/LT6200-5/LT6200-10 are
available in the 6-lead ThinSOTTM and the 8-pin SO package.
The dual LT6201 is available in an 8-pin SO package with
standard pinouts as well as a tiny, dual fine pitch leadless
package (DFN). These amplifiers can be used as plug-in
replacements for many high speed op amps to improve
input/output range and noise performance.
FeaTures
applicaTions
n Low Noise Voltage: 0.95nV/√Hz (100kHz)
n Gain Bandwidth Product:
LT6200/LT6201 165MHz AV = 1
LT6200-5 800MHz AV ≥ 5
LT6200-10 1.6GHz AV ≥ 10
n Low Distortion: –80dB at 1MHz, RL = 100Ω
n Dual LT6201 in Tiny DFN Package
n Input Common Mode Range Includes Both Rails
n Output Swings Rail-to-Rail
n Low Offset Voltage: 1mV Max
n Wide Supply Range: 2.5V to 12.6V
n Output Current: 60mA Min
n Operating Temperature Range –40°C to 85°C
n Power Shutdown, Thermal Shutdown
n SO-8 and Low Profile (1mm) ThinSOT™ Packages
Transimpedance Amplifiers
Low Noise Signal Processing
Active Filters
Rail-to-Rail Buffer Amplifiers
Driving A/D Converters
+
5V
I
PD
PHOTO
DIODE
C
F
10k 0.1µF
10k
1k V
OUT
≈ 2V
+I
PD
• R
F
PHILIPS
BF862
R
F
LT6200
6200 TA01
Distortion vs Frequency
Single Supply, 1.5nV/√Hz, Photodiode Amplifier
FREQUENCY (Hz)
100k
–110
DISTORTION (dBc)
–100
–90
–80
–70
–50
1M 10M
6200 G35
–60
HD2, RL = 100Ω
HD3, RL = 100Ω
HD3, RL = 1k
AV = 1
VO = 2VP-P
VS = ±2.5V
HD2, RL = 1k
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks and
ThinSOT is a trademark of Linear Technology Corporation. All other trademarks are the property
of their respective owners.
LT6200/LT6200-5
LT6200-10/LT6201
2
62001ff
absoluTe MaxiMuM raTings
pin conFiguraTion
LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION
SPECIFIED
TEMPERATURE RANGE
LT6200CS6#PBF LT6200CS6#TRPBF LTJZ 6-Lead Plastic TSOT-23 0°C to 70°C
LT6200IS6#PBF LT6200IS6#TRPBF LTJZ 6-Lead Plastic TSOT-23 40°C to 85°C
LT6200CS6-5#PBF LT6200CS6-5#TRPBF LTACB 6-Lead Plastic TSOT-23 0°C to 70°C
LT6200IS6-5#PBF LT6200IS6-5#TRPBF LTACB 6-Lead Plastic TSOT-23 40°C to 85°C
LT6200CS6-10#PBF LT6200CS6-10#TRPBF LTACC 6-Lead Plastic TSOT-23 0°C to 70°C
LT6200IS6-10#PBF LT6200IS6-10#TRPBF LTACC 6-Lead Plastic TSOT-23 40°C to 85°C
LT6200CS8#PBF LT6200CS8#TRPBF 6200 8-Lead Plastic SO 0°C to 70°C
LT6200IS8#PBF LT6200IS8#TRPBF 6200I 8-Lead Plastic SO –40°C to 85°C
LT6200CS8-5#PBF LT6200CS8-5#TRPBF 62005 8-Lead Plastic SO 0°C to 70°C
LT6200IS8-5#PBF LT6200IS8-5#TRPBF 6200I5 8-Lead Plastic SO –40°C to 85°C
(Note 1)
Total Supply Voltage (V+ to V) ..............................12.6V
Total Supply Voltage (V+ to V) (LT6201DD) ...............7V
Input Current (Note 2) ......................................... ±40mA
Output Short-Circuit Duration (Note 3) ............ Indefinite
Pin Current While Exceeding Supplies
(Note 12) ..............................................................±30mA
Operating Temperature Range (Note 4)....40°C to 85°C
Specified Temperature Range (Note 5) ....40°C to 85°C
Junction Temperature ........................................... 150°C
Junction Temperature (DD Package) .................... 125°C
Storage Temperature Range ...................65°C to 150°C
Storage Temperature Range
(DD Package) ........................................65°C to 125°C
Lead Temperature (Soldering, 10 sec) .................. 300°C
6 V+
5 SHDN
4 –IN
OUT 1
TOP VIEW
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
V 2
+IN 3
TJMAX = 150°C, θJA = 160°C/W (Note 10)
TOP VIEW
S8 PACKAGE
8-LEAD PLASTIC SO
1
2
3
4
8
7
6
5
SHDN
–IN
+IN
V
NC
V+
OUT
NC
+
TJMAX = 150°C, θJA = 100°C/W
TOP VIEW
DD PACKAGE
8-LEAD (3mm × 3mm) PLASTIC DFN
5
6
7
8
4
3
2
1OUT A
–IN A
+IN A
V
V+
OUT B
IN B
+IN B
A
B
TJMAX = 150°C, θJA = 160°C/W (NOTE 3)
UNDERSIDE METAL CONNECTED TO V
TOP VIEW
S8 PACKAGE
8-LEAD PLASTIC SO
1
2
3
4
8
7
6
5
OUT A
–IN A
+IN A
V
V+
OUT B
–IN B
+IN B
+
+
TJMAX = 150°C, θJA = 100°C/W
orDer inForMaTion
3
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION
SPECIFIED
TEMPERATURE RANGE
LT6200CS8-10#PBF LT6200CS8-10#TRPBF 620010 8-Lead Plastic SO 0°C to 70°C
LT6200IS8-10#PBF LT6200IS8-10#TRPBF 200I10 8-Lead Plastic SO –40°C to 85°C
LT6201CDD#PBF LT6201CDD #TRPBF LADG 8-Lead (3mm × 3mm) Plastic DFN 0°C to 70°C
LT6201CS8#PBF LT6201CS8 #TRPBF 6201 8-Lead Plastic SO 0°C to 70°C
LT6201IS8 #PBF LT6201IS8 #TRPBF 6201I 8-Lead Plastic SO –40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
orDer inForMaTion
elecTrical characTerisTics
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VS = 5V, VCM = Half Supply
VS = 3V, VCM = Half Supply
0.1
0.9
1
2.5
mV
mV
VS = 5V, VCM = V+ to V
VS = 3V, VCM = V+ to V 0.6
1.8
2
4
mV
mV
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
VCM = Half Supply
VCM = V to V+0.2
0.5
1.1
2.2
mV
mV
IBInput Bias Current VCM = Half Supply
VCM = V+
VCM = V
–40
–50
–10
8
–23
18
µA
µA
µA
∆IBIB Shift VCM = V to V+31 68 µA
IB Match (Channel-to-Channel) (Note 11) VCM = V to V+0.3 5 µA
IOS Input Offset Current VCM = Half Supply
VCM = V+
VCM = V
0.1
0.02
0.4
4
4
5
µA
µA
µA
Input Noise Voltage 0.1Hz to 10Hz 600 nVP-P
enInput Noise Voltage Density f = 100kHz, VS = 5V
f = 10kHz, VS = 5V
1.1
1.5
2.4
nV/√Hz
nV/√Hz
inInput Noise Current Density, Balanced Source
Unbalanced Source
f = 10kHz, VS = 5V
f = 10kHz, VS = 5V
2.2
3.5
pA/√Hz
pA/√Hz
Input Resistance Common Mode
Differential Mode
0.57
2.1
CIN Input Capacitance Common Mode
Differential Mode
3.1
4.2
pF
pF
AVOL Large-Signal Gain VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2
VS = 5V, VO = 1V to 4V, RL = 100Ω to VS/2
VS = 3V, VO = 0.5V to 2.5V, RL = 1k to VS/2
70
11
17
120
18
70
V/mV
V/mV
V/mV
CMRR Common Mode Rejection Ratio VS = 5V, VCM = V to V+
VS = 5V, VCM = 1.5V to 3.5V
VS = 3V, VCM = V to V+
65
85
60
90
112
85
dB
dB
dB
CMRR Match (Channel-to-Channel) (Note 11) VS = 5V, VCM = 1.5V to 3.5V 80 105 dB
PSRR Power Supply Rejection Ratio VS = 2.5V to 10V, LT6201DD VS = 2.5V to 7V 60 68 dB
PSRR Match (Channel-to-Channel) (Note 11) VS = 2.5V to 10V, LT6201DD VS = 2.5V to 7V 65 100 dB
Minimum Supply Voltage (Note 6) 2.5 V
TA = 25°C, VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply, VSHDN = OPEN,
unless otherwise noted.
LT6200/LT6200-5
LT6200-10/LT6201
4
62001ff
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VS = 5V, VCM = Half Supply
VS = 3V, VCM = Half Supply
l
l
0.2
1
1.2
2.7
mV
mV
VS = 5V, VCM = V+ to V
VS = 3V, VCM = V+ to V
l
l
0.3
1.5
3
4
mV
mV
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
VCM = Half Supply
VCM = V to V+
l
l
0.2
0.4
1.8
2.8
mV
mV
VOS TC Input Offset Voltage Drift (Note 8) VCM = Half Supply l2.5 8 µV/ºC
IBInput Bias Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
–40
–50
–10
8
–23
18
µA
µA
µA
IB Match (Channel-to-Channel) (Note 11) VCM = V to V+l0.5 6 µA
∆IBIB Shift VCM = V to V+l31 68 µA
IOS Input Offset Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
0.1
0.02
0.4
4
4
5
µA
µA
µA
elecTrical characTerisTics
TA = 25°C, VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply, VSHDN = OPEN,
unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOL Output Voltage Swing LOW (Note 7) No Load
ISINK = 5mA
VS = 5V, ISINK = 20mA
VS = 3V, ISINK = 20mA
9
50
150
160
50
100
290
300
mV
mV
mV
mV
VOH Output Voltage Swing HIGH (Note 7) No Load
ISOURCE = 5mA
VS = 5V, ISOURCE = 20mA
VS = 3V, ISOURCE = 20mA
55
95
220
240
110
190
400
450
mV
mV
mV
mV
ISC Short-Circuit Current VS = 5V
VS = 3V
±60
±50
±90
±80
mA
mA
ISSupply Current per Amplifier
Disabled Supply Current per Amplifier
VS = 5V
VS = 3V
VSHDN = 0.3V
16.5
15
1.3
20
18
1.8
mA
mA
mA
ISHDN SHDN Pin Current VSHDN = 0.3V 200 280 µA
VLVSHDN Pin Input Voltage LOW 0.3 V
VHVSHDN Pin Input Voltage HIGH V+0.5 V
Shutdown Output Leakage Current VSHDN = 0.3V 0.1 75 µA
tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V 180 ns
tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V 180 ns
GBW Gain Bandwidth Product Frequency = 1MHz, VS = 5V
LT6200, LT6201
LT6200-5
LT6200-10
145
750
1450
MHz
MHz
MHz
SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V
LT6200, LT6201
31
44
V/µs
VS = 5V, AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
210
340
V/µs
V/µs
FPBW Full Power Bandwidth (Note 9) VS = 5V, VOUT = 3VP-P (LT6200) 3.28 4.66 MHz
tSSettling Time (LT6200, LT6201) 0.1%, VS = 5V, VSTEP = 2V, AV = –1, RL = 1k 165 ns
The denotes the specifications which apply over 0°C < TA < 70°C temperature range. VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply,
VSHDN = OPEN, unless otherwise noted.
5
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
elecTrical characTerisTics
The denotes the specifications which apply over 0°C < TA < 70°C
temperature range. VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply, VSHDN = OPEN, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
AVOL Large-Signal Gain VS = 5V, VO = 0.5V to 4.5V,RL = 1k to VS/2
VS = 5V, VO = 1.5V to 3.5V,RL = 100Ω to VS/2
VS = 3V, VO = 0.5V to 2.5V,RL = 1k to VS/2
l
l
l
46
7.5
13
80
13
22
V/mV
V/mV
V/mV
CMRR Common Mode Rejection Ratio VS = 5V, VCM = V to V+
VS = 5V, VCM = 1.5V to 3.5V
VS = 3V, VCM = V to V+
l
l
l
64
80
60
88
105
83
dB
dB
dB
CMRR Match (Channel-to-Channel) (Note 11) VS = 5V, VCM = 1.5V to 3.5V l80 105 dB
PSRR Power Supply Rejection Ratio VS = 3V to 10V, LT6201DD VS = 3V to 7V l60 65 dB
PSRR Match (Channel-to-Channel) (Note 11) VS = 3V to 10V, LT6201DD VS = 3V to 7V l60 100 dB
Minimum Supply Voltage (Note 6) l3 V
VOL Output Voltage Swing LOW (Note 7) No Load
ISINK = 5mA
VS = 5V, ISINK = 20mA
VS = 3V, ISINK = 20mA
l
l
l
l
12
55
170
170
60
110
310
310
mV
mV
mV
mV
VOH Output Voltage Swing HIGH (Note 7) No Load
ISOURCE = 5mA
VS = 5V, ISOURCE = 20mA
VS = 3V, ISOURCE = 20mA
l
l
l
l
65
115
260
270
120
210
440
490
mV
mV
mV
mV
ISC Short-Circuit Current VS = 5V
VS = 3V
l
l
±60
±45
±90
±75
mA
mA
ISSupply Current per Amplifier
Disabled Supply Current per Amplifier
VS = 5V
VS = 3V
VSHDN = 0.3V
l
l
l
20
19
1.35
23
22
1.8
mA
mA
mA
ISHDN SHDN Pin Current VSHDN = 0.3V l215 295 µA
VLVSHDN Pin Input Voltage LOW l0.3 V
VHVSHDN Pin Input Voltage HIGH lV+0.5 V
Shutdown Output Leakage Current VSHDN = 0.3V l0.1 75 µA
tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V l180 ns
tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V l180 ns
SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V
LT6200, LT6201
l
29
42
V/µs
VS = 5V, AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
l
l
190
310
V/µs
V/µs
FPBW Full Power Bandwidth (Note 9) VS = 5V, VOUT = 3VP-P (LT6200) l3.07 4.45 MHz
The denotes the specifications which apply over –40°C < TA < 85°C temperature range. Excludes the LT6201 in the DD package (Note 3).
VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply, VSHDN = OPEN, unless otherwise noted. (Note 5)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VS = 5V, VCM = Half Supply
VS = 3V, VCM = Half Supply
l
l
0.2
1
1.5
2.8
mV
mV
VS = 5V, VCM = V+ to V
VS = 3V, VCM = V+ to V
l
l
0.3
1.5
3.5
4.3
mV
mV
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
VCM = Half Supply
VCM = V to V+
l
l
0.2
0.4
2
3
mV
mV
VOS TC Input Offset Voltage Drift (Note 8) VCM = Half Supply l2.5 8 µV/ºC
IBInput Bias Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
–40
–50
–10
8
–23
18
µA
µA
µA
LT6200/LT6200-5
LT6200-10/LT6201
6
62001ff
elecTrical characTerisTics
The denotes the specifications which apply over –40°C < TA < 85°C
temperature range. Excludes the LT6201 in the DD package (Note 3). VS = 5V, 0V; VS = 3V, 0V; VCM = VOUT = half supply, VSHDN = OPEN,
unless otherwise noted. (Note 5)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
∆IBIB Shift VCM = V to V+l31 68 µA
IB Match (Channel-to-Channel) (Note 11) VCM = V to V+l1 9 µA
IOS Input Offset Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
0.1
0.02
0.4
4
4
5
µA
µA
µA
AVOL Large-Signal Gain VS = 5V, VO = 0.5V to 4.5V, RL = 1k to VS/2
VS = 5V, VO = 1.5V to 3.5V, RL = 100Ω to VS/2
VS = 3V, VO = 0.5V to 2.5V,RL = 1k to VS/2
l
l
l
40
7.5
11
70
13
20
V/mV
V/mV
V/mV
CMRR Common Mode Rejection Ratio VS = 5V, VCM = V to V+
VS = 5V, VCM = 1.5V to 3.5V
VS = 3V, VCM = V to V+
l
l
l
60
80
60
80
100
80
dB
dB
dB
CMRR Match (Channel-to-Channel) (Note 11) VS = 5V, VCM = 1.5V to 3.5V l75 105 dB
PSRR Power Supply Rejection Ratio VS = 3V to 10V l60 68 dB
PSRR Match (Channel-to-Channel) (Note 11) VS = 3V to 10V l60 100 dB
Minimum Supply Voltage (Note 6) l3 V
VOL Output Voltage Swing LOW (Note 7) No Load
ISINK = 5mA
VS = 5V, ISINK = 20mA
VS = 3V, ISINK = 20mA
l
l
l
l
18
60
170
175
70
120
310
315
mV
mV
mV
mV
VOH Output Voltage Swing HIGH (Note 7) No Load
ISOURCE = 5mA
VS = 5V, ISOURCE = 20mA
VS = 3V, ISOURCE = 20mA
l
l
l
l
65
115
270
280
120
210
450
500
mV
mV
mV
mV
ISC Short-Circuit Current VS = 5V
VS = 3V
l
l
±50
±30
±80
±60
mA
mA
ISSupply Current per Amplifier
Disabled Supply Current per Amplifier
VS = 5V
VS = 3V
VSHDN = 0.3V
l
l
l
22
20
1.4
25.3
23
1.9
mA
mA
mA
ISHDN SHDN Pin Current VSHDN = 0.3V l220 300 µA
VLVSHDN Pin Input Voltage LOW l0.3 V
VHVSHDN Pin Input Voltage HIGH lV+ – 0.5 V
Shutdown Output Leakage Current VSHDN = 0.3V l0.1 75 µA
tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V l180 ns
tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V l180 ns
SR Slew Rate VS = 5V, AV = –1, RL = 1k, VO = 4V
LT6200, LT6201
l
23
33
V/µs
VS = 5V, AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
l
l
160
260
V/µs
V/µs
FPBW Full Power Bandwidth (Note 9) VS = 5V, VOUT = 3VP-P (LT6200) l2.44 3.5 MHz
TA = 25°C, VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless otherwise noted. Excludes the LT6201 in the DD package (Note 3).
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = Half Supply
VCM = V+
VCM = V
1.4
2.5
2.5
4
6
6
mV
mV
mV
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
VCM = 0V
VCM = V to V+0.2
0.4
1.6
3.2
mV
mV
7
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
elecTrical characTerisTics
TA = 25°C, VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless otherwise noted.
Excludes the LT6201 in the DD package (Note 3).
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IBInput Bias Current VCM = Half Supply
VCM = V+
VCM = V
40
50
10
8
–23
18
µA
µA
µA
∆IBIB Shift VCM = V to V+31 68 µA
IB Match (Channel-to-Channel) (Note 11) VCM = V to V+0.2 6 µA
IOS Input Offset Current VCM = Half Supply
VCM = V+
VCM = V
1.3
1
3
7
7
12
µA
µA
µA
Input Noise Voltage 0.1Hz to 10Hz 600 nVP-P
enInput Noise Voltage Density f = 100kHz
f = 10kHz
0.95
1.4
2.3
nV/√Hz
nV/√Hz
inInput Noise Current Density, Balanced Source
Unbalanced Source
f = 10kHz
f = 10kHz
2.2
3.5
pA/√Hz
pA/√Hz
Input Resistance Common Mode
Differential Mode
0.57
2.1
CIN Input Capacitance Common Mode
Differential Mode
3.1
4.2
pF
pF
AVOL Large-Signal Gain VO = ±4.5V, RL = 1k
VO = ±2V, RL = 100
115
15
200
26
V/mV
V/mV
CMRR Common Mode Rejection Ratio VCM = V
to V+
VCM = –2V to 2V
68
75
96
100
dB
dB
CMRR Match (Channel-to-Channel) (Note 11) VCM = –2V to 2V 80 105 dB
PSRR Power Supply Rejection Ratio VS = ±1.25V to ±5V 60 68 dB
PSRR Match (Channel-to-Channel) (Note 6) VS = ±1.25V to ±5V 65 100 dB
VOL Output Voltage Swing LOW (Note 7) No Load
ISINK = 5mA
ISINK = 20mA
12
55
150
50
110
290
mV
mV
mV
VOH Output Voltage Swing HIGH (Note 7) No Load
ISOURCE = 5mA
ISOURCE = 20mA
70
110
225
130
210
420
mV
mV
mV
ISC Short-Circuit Current ±60 ±90 mA
ISSupply Current per Amplifier
Disabled Supply Current per Amplifier
VSHDN = 0.3V
20
1.6
23
2.1
mA
mA
ISHDN SHDN Pin Current VSHDN = 0.3V 200 280 µA
VLVSHDN Pin Input Voltage LOW 0.3 V
VHVSHDN Pin Input Voltage HIGH V+0.5 V
Shutdown Output Leakage Current VSHDN = 0.3V 0.1 75 µA
tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V 180 ns
tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V 180 ns
GBW Gain Bandwidth Product Frequency = 1MHz
LT6200, LT6201
LT6200-5
LT6200-10
110
530
1060
165
800
1600
MHz
MHz
MHz
SR Slew Rate AV = –1, RL = 1k, VO = 4V
LT6200, LT6201
35
50
V/µs
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
175
315
250
450
V/µs
V/µs
LT6200/LT6200-5
LT6200-10/LT6201
8
62001ff
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = Half Supply
VCM = V+
VCM = V
l
l
l
1.9
3.5
3.5
4.5
7.5
7.5
mV
mV
mV
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
VCM = 0V
VCM = V to V+
l
l
0.2
0.4
1.8
3.4
mV
mV
VOS TC Input Offset Voltage Drift (Note 8) VCM = Half Supply l8.2 24 µV/ºC
IBInput Bias Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
–40
–50
–10
8
–23
18
µA
µA
µA
∆IBIB Shift VCM = V to V+l31 68 µA
IB Match (Channel-to-Channel) (Note 11) VCM = V to V+l1 9 µA
IOS Input Offset Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
1.3
1
3.5
10
10
15
µA
µA
µA
AVOL Large-Signal Gain VO = ±4.5V, RL = 1k
VO = ±2V, RL = 100
l
l
46
7.5
80
13.5
V/mV
V/mV
CMRR Common Mode Rejection Ratio VCM = V to V+
VCM = –2V to 2V
l
l
65
75
90
100
dB
dB
CMRR Match (Channel-to-Channel) (Note 11) VCM = –2V to 2V l75 105 dB
PSRR Power Supply Rejection Ratio VS = ±1.5V to ±5V l60 65 dB
PSRR Match (Channel-to-Channel) (Note 6) VS = ±1.5V to ±5V l60 100 dB
VOL Output Voltage Swing LOW (Note 7) No Load
ISINK = 5mA
ISINK = 20mA
l
l
l
16
60
170
70
120
310
mV
mV
mV
VOH Output Voltage Swing HIGH (Note 7) No Load
ISOURCE = 5mA
ISOURCE = 20mA
l
l
l
85
125
265
150
230
480
mV
mV
mV
ISC Short-Circuit Current l±60 ±90 mA
ISSupply Current per Amplifier
Disabled Supply Current per Amplifier
VSHDN = 0.3V
l
l
25
1.6
29
2.1
mA
mA
ISHDN SHDN Pin Current VSHDN = 0.3V l215 295 µA
VLVSHDN Pin Input Voltage LOW l0.3 V
VHVSHDN Pin Input Voltage HIGH lV+ – 0.5 V
Shutdown Output Leakage Current VSHDN = 0.3V l0.1 75 µA
tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V l180 ns
tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V l180 ns
SR Slew Rate AV = –1, RL = 1k, VO = 4V
LT6200, LT6201
l
31
44
V/µs
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
l
l
150
290
215
410
V/µs
V/µs
FPBW Full Power Bandwidth (Note 9) VOUT = 3VP-P (LT6200-10) l30 43 MHz
elecTrical characTerisTics
The denotes the specifications which apply over 0°C < TA < 70°C temperature range. Excludes the LT6201 in the DD package (Note
3). VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless otherwise noted.
TA = 25°C, VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless otherwise
noted. Excludes the LT6201 in the DD package (Note 3).
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
FPBW Full Power Bandwidth (Note 9) VOUT = 3VP-P (LT6200-10) 33 47 MHz
tSSetting Time (LT6200, LT6201) 0.1%, VSTEP = 1, RL = 1k 140 ns
9
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VOS Input Offset Voltage VCM = Half Supply
VCM = V+
VCM = V
l
l
l
1.9
3.5
3.5
4.5
7.5
7.5
mV
mV
mV
Input Offset Voltage Match
(Channel-to-Channel) (Note 11)
VCM = 0V
VCM = V to V+
l
l
0.2
0.4
2
3.6
mV
mV
VOS TC Input Offset Voltage Drift (Note 8) VCM = Half Supply l8.2 24 µV/ºC
IBInput Bias Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
–40
–50
–10
8
–23
18
µA
µA
µA
∆IBIB Shift VCM = V to V+l31 68 µA
IB Match (Channel-to-Channel) (Note 11) l4 12 µA
IOS Input Offset Current VCM = Half Supply
VCM = V+
VCM = V
l
l
l
1.3
1
3.5
10
10
15
µA
µA
µA
AVOL Large-Signal Gain VO = ±4.5V, RL = 1k
VO = ±2V, RL = 100
l
l
46
7.5
80
13.5
V/mV
V/mV
CMRR Common Mode Rejection Ratio VCM = V to V+
VCM = –2V to 2V
l
l
65
75
90
100
dB
dB
CMRR Match (Channel-to-Channel) (Note 11) VCM = –2V to 2V l75 105 dB
PSRR Power Supply Rejection Ratio VS = ±1.5V to ±5V l60 65 dB
PSRR Match (Channel-to-Channel) (Note 6) VS = ±1.5V to ±5V l60 100 dB
VOL Output Voltage Swing LOW (Note 7) No Load
ISINK = 5mA
ISINK = 20mA
l
l
l
16
60
170
75
125
310
mV
mV
mV
VOH Output Voltage Swing HIGH (Note 7) No Load
ISOURCE = 5mA
ISINK = 20mA
l
l
l
85
125
265
150
230
480
mV
mV
mV
ISC Short-Circuit Current l±60 ±90 mA
ISSupply Current
Disabled Supply Current
VSHDN = 0.3V
l
l
25
1.6
29
2.1
mA
mA
ISHDN SHDN Pin Current VSHDN = 0.3V l215 295 µA
VLVSHDN Pin Input Voltage LOW l0.3 V
VHVSHDN Pin Input Voltage HIGH lV+ – 0.5 V
Shutdown Output Leakage Current VSHDN = 0.3V l0.1 75 µA
tON Turn-On Time VSHDN = 0.3V to 4.5V, RL = 100Ω, VS = 5V l180 ns
tOFF Turn-Off Time VSHDN = 4.5V to 0.3V, RL = 100Ω, VS = 5V l180 ns
SR Slew Rate AV = –1, RL = 1k, VO = 4V
LT6200, LT6201
l
31
44
V/µs
AV = –10, RL = 1k, VO = 4V
LT6200-5
LT6200-10
l
l
125
260
180
370
V/µs
V/µs
FPBW Full Power Bandwidth (Note 9) VOUT = 3VP-P (LT6200-10) l27 39 MHz
elecTrical characTerisTics
The denotes the specifications which apply over –40°C < TA < 85°C
temperature range. Excludes the LT6201 in the DD package (Note 3). VS = ±5V, VCM = VOUT = 0V, VSHDN = OPEN, unless
otherwise noted. (Note 5)
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime
Note 2: Inputs are protected by back-to-back diodes. If the differential
input voltage exceeds 0.7V, the input current must be limited to less
than 40mA. This parameter is guaranteed to meet specified performance
through design and/or characterization. It is not 100% tested.
LT6200/LT6200-5
LT6200-10/LT6201
10
62001ff
VOS Distribution, VCM = V+/2
INPUT OFFSET VOLTAGE (µV)
–1000
NUMBER OF UNITS
80
70
60
50
40
30
20
10
0600
6200 G01
–600 –200 200 1000
V
S
= 5V, 0V
SO-8
INPUT OFFSET VOLTAGE (µV)
–1600–1200
NUMBER OF UNITS
40
60
1600
6200 G02
20
0–800 –400 0 400 800 1200
80
30
50
10
70
V
S
= 5V, 0V
SO-8
INPUT OFFSET VOLTAGE (µV)
–1600–1200
NUMBER OF UNITS
40
60
1600
6200 G03
20
0–800 –400 0 400 800 1200
80
30
50
10
70
V
S
= 5V, 0V
SO-8
VOS Distribution, VCM = V+VOS Distribution, VCM = V
Note 3: A heat sink may be required to keep the junction temperature
below the absolute maximum rating when the output is shorted
indefinitely. The LT6201 in the DD package is limited by power dissipation
to VS ≤ 5V, 0V over the commercial temperature range only.
Note 4: The LT6200C/LT6200I and LT6201C/LT6201I are guaranteed functional
over the temperature range of –40°C and 85°C (LT6201DD excluded).
Note 5: The LT6200C/LT6201C are guaranteed to meet specified
performance from 0°C to 70°C. The LT6200C/LT6201C are designed,
characterized and expected to meet specified performance from –40°C
to 85°C, but are not tested or QA sampled at these temperatures. The
LT6200I is guaranteed to meet specified performance from –40°C to 85°C.
Note 6: Minimum supply voltage is guaranteed by power supply rejection
ratio test.
Note 7: Output voltage swings are measured between the output and
power supply rails.
Note 8: This parameter is not 100% tested.
Note 9: Full-power bandwidth is calculated from the slew rate:
FPBW = SR/2πVP
Note 10: Thermal resistance varies depending upon the amount of PC board
metal attached to the V– pin of the device. θJA is specified for a certain
amount of 2oz copper metal trace connecting to the V– pin as described in
the thermal resistance tables in the Application Information section.
Note 11: Matching parameters on the LT6201 are the difference between
the two amplifiers. CMRR and PSRR match are defined as follows: CMRR
and PSRR are measured in µV/V on the identical amplifiers. The difference
is calculated in µV/V. The result is converted to dB.
Note 12: There are reverse biased ESD diodes on all inputs and outputs, as
shown in Figure 1. If these pins are forced beyond either supply, unlimited
current will flow through these diodes. If the current is transient in nature
and limited to less than 30mA, no damage to the device will occur.
Supply Current vs Supply Voltage
Offset Voltage
vs Input Common Mode Voltage
Input Bias Current
vs Common Mode Voltage
TOTAL SUPPLY VOLTAGE (V)
0
SUPPLY CURRENT (mA)
20
25
30
6 10
6200 G04
15
10
2 4 8 12 14
5
0
T
A
= 125°C
T
A
= –55°C
T
A
= 25°C
INPUT COMMON MODE VOLTAGE (V)
0
–1.5
OFFSET VOLTAGE (mV)
–1.0
0
0.5
1.0
245
3.0
6200 G05
0.5
1 3
1.5
2.0
2.5
V
S
= 5V, 0V
TYPICAL PART
T
A
= 125°C
T
A
= –55°C
T
A
= 25°C
COMMON MODE VOLTAGE (V)
–1
INPUT BIAS CURRENT (µA)
0
10
20
2 4
6200 G06
–10
–20
0 1 3 5 6
–30
–40
V
S
= 5V, 0V
T
A
= 125°C
T
A
= –55°C
T
A
= 25°C
elecTrical characTerisTics
Typical perForMance characTerisTics
11
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Typical perForMance characTerisTics
Input Bias Current
vs Temperature
Output Saturation Voltage
vs Load Current (Output Low)
LOAD CURRENT (mA)
0.01
OUTPUT SATURATION VOLTAGE (V)
0.1
1
10
1 10
6200 G08
0.0010.1
VS = 5V, 0V
TA = 125°C
TA = –55°C
TA = 25°C
Output Saturation Voltage
vs Load Current (Output High)
LOAD CURRENT (mA)
0.1
0.01
OUTPUT SATURATION VOLTAGE (V)
0.1
1
10
1 10 100
6200 G09
VS = 5V, 0V
TA = 125°C
TA = –55°C
TA = 25°C
Minimum Supply Voltage
Output Short-Circuit Current
vs Power Supply Voltage Open-Loop Gain
TOTAL SUPPLY VOLTAGE (V)
–2.0
CHANGE IN OFFSET VOTLAGE (mV)
–1.0
1.0
–1.5
–0.5
0.5
0
1 2 3 4
6200 G10
50.50 1.5 2.5 3.5 4.5
T
A
= –55°C
T
A
= 125°C
T
A
= 25°C
V
CM
= V
S
/2
OUTPUT VOLTAGE (V)
0
–2.5
INPUT VOLTAGE (mV)
–1.5
–0.5
0.5
0.5 11.5 2
6200 G12
2.5
1.5
2.5
–2.0
–1.0
0
1.0
2.0
3
VS = 3V, 0V
TA = 25°C
RL = 1k
RL = 100Ω
Open-Loop Gain Open-Loop Gain Offset Voltage vs Output Current
OUTPUT VOLTAGE (V)
0
–2.5
INPUT VOLTAGE (mV)
–1.5
–0.5
0.5
123 4
6200 G13
1.5
2.5
–2.0
–1.0
0
1.0
2.0
5
VS = 5V, 0V
TA = 25°C
RL = 1k
RL = 100Ω
OUTPUT VOLTAGE (V)
–5
INPUT VOLTAGE (mV)
0.5
1.5
2.5
3
6200 G14
–0.5
–1.5
0
1.0
2.0
–1.0
–2.0
–2.5 –3–4 –1–2 1 2 4
05
V
S
= ±5V
T
A
= 25°C
R
L
= 1k
R
L
= 100Ω
OUTPUT CURRENT (mA)
–15
OFFSET VOLTAGE (mV)
–5
5
15
–10
0
10
–60 –20 20 60
6200 G15
100–100
V
S
= ±5V
T
A
= 125°C
T
A
= –55°C T
A
= 25°C
LT6200/LT6200-5
LT6200-10/LT6201
12
62001ff
Typical perForMance characTerisTics
Warm-Up Drift
vs Time (LT6200S8) Total Noise vs Source Resistance Input Noise Voltage vs Frequency
TIME AFTER POWER-UP (SEC)
0
0
CHANGE IN OFFSET VOLTAGE (µV)
50
100
150
200
40 80 120 160
6200 G16
250
300
20 60 100 140
T
A
= 25°C
V
S
= ±5V
V
S
= ±1.5V
V
S
= ±2.5V
SOURCE RESISTANCE (Ω)
1
TOTAL NOISE VOLTAGE (nV/√Hz)
10
10 1k 10k 100k
6200 G17
0.1 100
100
LT6200
TOTAL NOISE
RESISTOR
NOISE
LT6200 AMPLIFIER
NOISE VOLTAGE
VS = ±5V
VCM = 0V
f = 100kHz
UNBALANCED
SOURCE
RESISTORS
FREQUENCY (Hz)
10
NOISE VOLTAGE (nV/√Hz)
25
30
35
100k
6200 G18
20
15
0100 1k 10k
10
5
45
40
V
S
= 5V, 0V
T
A
= 25°C
PNP ACTIVE
V
CM
= 0.5V
NPN ACTIVE
V
CM
= 4.5V
BOTH ACTIVE
V
CM
= 2.5V
Balanced Noise Current
vs Frequency
0.1Hz to 10Hz Output
Noise Voltage
FREQUENCY (Hz)
5
BALANCED NOISE CURRENT (pA/√Hz)
10
15
20
25
10 1k 10k 100k
6200 G19
0100
VS = 5V, 0V
TA = 25°C
BALANCED
SOURCE
RESISTANCE
PNP ACTIVE
VCM = 0.5V
NPN ACTIVE
VCM = 4.5V
BOTH ACTIVE
VCM = 2.5V
Unbalanced Noise Current
vs Frequency
FREQUENCY (Hz)
10
UNBALANCED NOISE CURRENT (pA/√Hz)
20
30
35
10 1k 10k 100k
6200 G20
0100
25
15
5
VS = 5V, 0V
TA = 25°C
UNBALANCED
SOURCE
RESISTANCE
PNP ACTIVE
VCM = 0.5V
BOTH ACTIVE
VCM = 2.5V
NPN ACTIVE
VCM = 4.5V
Supply Current
vs SHDN Pin Voltage
SHDN PIN VOLTAGE (V)
0
0
SUPPLY CURRENT (mA)
4
8
12
16
1234
6200 G21a
5
20
2
6
10
14
18
22
T
A
= –55°C
T
A
= 25°C
T
A
= 125°C
V
S
= 5V, 0V
SHDN Pin Current
vs SHDN Pin Voltage
SHDN PIN VOLTAGE (V)
0
–50
0
50
4
6200 G21b
–100
–150
1 2 3 5
–200
–250
–300
SHDN PIN CURRENT (µA)
T
A
= 25°C
T
A
= 125°C
V
S
= 5V, 0V
T
A
= –55°C
13
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Typical perForMance characTerisTics
Gain Bandwidth and Phase
Margin vs Temperature Open-Loop Gain vs Frequency
TEMPERATURE (°C)
–50
100
GAIN BANDWIDTH (MHz)
120
160
180
50
6200 G22
140
40
PHASE MARGIN (DEG)
50
70
60
0
–25 75 100
25 125
VS = ±5V
VS = ±5V
VS = 3V, 0V
VS = 3V, 0V
PHASE MARGIN
GAIN BANDWIDTH
FREQUENCY (Hz)
10
GAIN (dB)
PHASE (DEG)
70
80
0
–10
60
30
50
40
20
100k 10M 100M 1G
6200 G23
–20
–20
100
120
–40
–60
80
20
60
40
0
–80
1M
V
CM
= 0.5V
V
CM
= 0.5V
V
CM
= 4.5V
V
CM
= 4.5V
PHASE
GAIN
V
S
= 5V, 0V
C
L
= 5pF
R
L
= 1k
Gain Bandwidth and Phase
Margin vs Supply VoltageOpen-Loop Gain vs Frequency
FREQUENCY (Hz)
10
GAIN (dB)
PHASE (DEG)
70
80
0
–10
60
30
50
40
20
100k 10M 100M 1G
6200 G24
–20
–20
100
120
–40
–60
80
20
60
40
0
–80
1M
V
S
= ±5V
V
S
= ±5V
V
S
= ±1.5V
V
S
= ±1.5V
PHASE
GAIN
V
CM
= 0V
C
L
= 5pF
R
L
= 1k
TOTAL SUPPLY VOLTAGE (V)
0
GAIN BANDWIDTH (MHz)
PHASE MARGIN (DEG)
140
60
70
80
4810
6200 G25
100
40
180
120
50
80
30
160
2612 14
TA = 25°C
RL = 1k
CL = 5pF PHASE MARGIN
GAIN BANDWIDTH
LT6200, LT6201
Slew Rate vs Temperature
Common Mode Rejection Ratio
vs FrequencyOutput Impedance vs Frequency
TEMPERATURE (°C)
–55 –35 –15 5 25 45 65 85 105
0
SLEW RATE (V/µs)
20
40
60
140
6200 G26
125
80
100
120
A
V
= –1
R
F
= R
G
= 1k
R
L
= 1k
V
S
= ±5V RISING
V
S
= ±2.5V RISING
V
S
= ±2.5V FALLING
V
S
= ±5V FALLING
FREQUENCY (MHz)
0.1
1
OUTPUT IMPEDANCE (Ω)
100
10
0.1 1 10
6200 G27
0.01
1000
100
VS = 5V, 0V
AV = 10
AV = 2
AV = 1
FREQUENCY (Hz)
40
COMMON MODE REJECTION RATIO (dB)
80
120
20
60
100
10k 1M 10M 100M 1G
6200 G28
0100k
VS = 5V, 0V
VCM = VS/2
LT6200/LT6200-5
LT6200-10/LT6201
14
62001ff
Typical perForMance characTerisTics
LT6200, LT6201
Power Supply Rejection Ratio
vs Frequency Overshoot vs Capacitive Load
FREQUENCY (Hz)
20
POWER SUPPLY REJECTION RATIO (dB)
30
50
70
80
1k 100k 1M 100M
6200 G29
10
10k 10M
60
40
0
VS = 5V, 0V
VCM = VS/2
TA = 25°C
POSITIVE
SUPPLY
NEGATIVE
SUPPLY
CAPACITIVE LOAD (pF)
10
0
OVERSHOOT (%)
10
20
40
100 1000
6200 G30
30
5
15
35
25
VS = 5V, 0V
AV = 1
RS = 10Ω
RS = 20Ω
RS = 50Ω
RL = 50Ω
CAPACITIVE LOAD (pF)
10
0
OVERSHOOT (%)
10
20
30
40
60
100 1000
6200 G31
50
VS = 5V, 0V
AV = 2
RS = 10Ω
RS = 20Ω
RS = 50Ω
RL = 50Ω
Settling Time vs Output Step
(Noninverting)
OUTPUT STEP (V)
–4
0
SETTLING TIME (ns)
50
100
150
200
–3 –2 –1 0
6200 G32
1 2 3 4
500Ω
V
OUT
V
IN
+
V
S
= ±5V
A
V
= 1
T
A
= 25°C
1mV 1mV
10mV 10mV
Maximum Undistorted Output
Signal vs Frequency
Settling Time vs Output Step
(Inverting)
OUTPUT STEP (V)
–4
0
SETTLING TIME (ns)
50
100
150
200
–3 –2 –1 0
6200 G33
1 2 3 4
V
S
= ±5V
A
V
= –1
T
A
= 25°C
1mV
10mV 10mV
500Ω
500Ω
V
OUT
V
IN
+
1mV
FREQUENCY (Hz)
10k
6
OUTPUT VOLTAGE SWING (V
P-P
)
8
10
100k 1M 10M
6200 G34
4
5
7
9
3
2
A
V
= 2
V
S
= ±5V
T
A
= 25°C
HD2, HD3 < –40dBc
A
V
= –1
Overshoot vs Capacitive Load
Distortion vs Frequency, AV = 1
FREQUENCY (Hz)
100k
–110
DISTORTION (dBc)
–100
–90
–80
–70
–50
1M 10M
6200 G36
–60
HD2, R
L
= 100Ω
HD3, R
L
= 100Ω
HD3, R
L
= 1k
A
V
= 1
V
O
= 2V
P-P
V
S
= ±5V
HD2, R
L
= 1k
Distortion vs Frequency, AV = 2
FREQUENCY (Hz)
–110
–80
–90
–100
–40
–50
–60
–70
6200 G37
DISTORTION (dBc)
100k 10M
1M
HD2, R
L
= 100Ω
HD3, R
L
= 1k
A
V
= 2
V
O
= 2V
P-P
V
S
= ±2.5V
HD2, R
L
= 1k
HD3, R
L
= 100Ω
Distortion vs Frequency, AV = 1
FREQUENCY (Hz)
100k
–110
DISTORTION (dBc)
–100
–90
–80
–70
–50
1M 10M
6200 G35
–60
HD2, RL = 100Ω
HD3, RL = 100Ω
HD3, RL = 1k
AV = 1
VO = 2VP-P
VS = ±2.5V
HD2, RL = 1k
15
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Typical perForMance characTerisTics
LT6200, LT6201
FREQUENCY (Hz)
–110
–80
–90
–100
–40
–50
–60
–70
6200 G38
DISTORTION (dBc)
100k 10M
1M
HD2, R
L
= 100Ω
HD3, R
L
= 1k
A
V
= 2
V
O
= 2V
P-P
V
S
= ±5V
HD2, R
L
= 1k
HD3, R
L
= 100Ω
5V Large-Signal Response
5V Small-Signal Response
±5V Large-Signal Response
Output Overdrive Recovery
Channel Separation vs Frequency
FREQUENCY (MHz)
0.1
–80
VOLTAGE GAIN (dB)
–60
–40
1 10 100
6200 G38a
–100
–120
0
–20
–90
–70
–50
–110
–10
–30
T
A
= 25°C
A
V
= 1
V
S
= ±5V
Distortion vs Frequency, AV = 2
200ns/DIVVS = 5V, 0V
AV = 1
RL = 1k
5V
0V
1V/DIV
6200 G39
200ns/DIVVS = ±5V
AV = 1
RL = 1k
0V
2V/DIV
6200 G40
200ns/DIVVS = 5V, 0V
AV = 2
0VVIN
1V/DIV
0VVout
2V/DIV
6200 G41
200ns/DIVVS = 5V, 0V
AV = 1
RL = 1k
50mV/DIV
6200 G42
LT6200/LT6200-5
LT6200-10/LT6201
16
62001ff
Typical perForMance characTerisTics
LT6200-5
Gain Bandwidth and Phase Margin
vs Temperature
TEMPERATURE (°C)
–50
500
GAIN BANDWIDTH (MHz)
PHASE MARGIN (DEG)
600
800
900
1000
50
6200 G45
700
0
–25 75 100
25 125
50
90
60
70
80
V
S
= ±5V
V
S
= ±5V
PHASE MARGIN
GAIN BANDWIDTH
V
S
= 3V, 0V
V
S
= 3V, 0V
TEMPERATURE (°C)
–55 –25 0 25 50 75 100
0
SLEW RATE (V/µs)
100
150
200
250
450
6200 G46
125
300
350
400
A
V
= –5
R
F
= R
L
= 1k
R
G
= 200Ω V
S
= ±5V RISING
V
S
= ±2.5V RISING
V
S
= ±2.5V FALLING
V
S
= ±5V FALLING
CAPACITIVE LOAD (pF)
10
0
OVERSHOOT (%)
10
20
30
40
60
100 1000
6200 G47
50
VS = 5V, 0V
AV = 5
RS = 0Ω
RS = 10Ω
RS = 20Ω
RS = 50Ω
Slew Rate vs Temperature Overshoot vs Capacitive Load
Power Supply Rejection Ratio
vs Frequency
FREQUENCY (Hz)
20
POWER SUPPLY REJECTION RATIO (dB)
30
50
70
80
1k 100k 1M
100M
6200 G48
10
10k 10M
60
40
0
POSITIVE
SUPPLY
NEGATIVE
SUPPLY
VS = 5V, 0V
TA = 25°C
VCM = VS/2
FREQUENCY (Hz)
0.01
0.1
OUTPUT IMPEDANCE (Ω)
10
1
100k 1M 10M
6200 G49
100
1000
100M
V
S
= 5V, 0V
A
V
= 50
A
V
= 5
FREQUENCY (Hz)
30
GAIN (dB)
PHASE (DEG)
90
100
20
10
80
50
70
60
40
100k 10M 100M 1G
6200 G50
–10
0
100
120
80
20
60
40
0
1M
V
S
= ±5V
GAIN
PHASE
V
S
= ±5V
V
S
= ±1.5V
V
S
= ±1.5V
V
CM
= 0V
C
L
= 5pF
R
L
= 1k
Output Impedance vs Frequency Open-Loop Gain vs Frequency
Open-Loop Gain vs Frequency
Gain Bandwidth and Phase Margin
vs Supply Voltage Gain Bandwidth vs Resistor Load
FREQUENCY (Hz)
30
GAIN (dB)
PHASE (DEG)
90
100
20
10
80
50
70
60
40
100k 10M 100M 1G
6200 G51
–10
0
–20
100
120
–40
–60
80
20
60
40
0
–100
–80
1M
VCM = 0.5V
VCM = 0.5V
GAIN
PHASE
VCM = 4.5V
VCM = 4.5V
VS = 5V, 0V
CL = 5pF
RL = 1k
TOTAL SUPPLY VOLTAGE (V)
0
GAIN BANDWIDTH (MHz)
PHASE MARGIN (DEG)
1000
610
6200 G52
800
600
400 2 4 8
50
60
70
80
90
12
T
A
= 25°C
R
L
= 1k
C
L
= 5pF PHASE MARGIN
GAIN BANDWIDTH
RESISTOR LOAD (Ω)
0
0
GAIN BANDWIDTH (MHz)
100
300
400
500
600 700 800 900
900
G200 G53
200
100 200 300 400 500 1000
600
700
800
V
S
= ±5V
R
F
= 10k
R
G
= 1k
T
A
= 25°C
17
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Typical perForMance characTerisTics
LT6200-5
Common Mode Rejection Ratio
vs Frequency
Maximum Undistorted Output
Signal vs Frequency
2nd and 3rd Harmonic Distortion
vs Frequency
FREQUENCY (Hz)
40
COMMON MODE REJECTION RATIO (dB)
80
120
20
60
100
10k 1M 10M 100M 1G
6200 G54
0100k
VS = 5V, 0V
VCM = VS/2
FREQUENCY (Hz)
3
OUTPUT VOLTAGE SWING (VP-P)
9
10
2
1
8
5
7
6
4
10k 1M 10M 100M
6200 G55
0100k
VS = ±5V
AV = 5
TA = 25°C
2nd and 3rd Harmonic Distortion
vs Frequency ±5V Large-Signal Response Output-Overdrive Recovery
Input Referred High Frequency
Noise Spectrum
5V Small-Signal Response
50ns/DIVVS = ±5V
AV = 5
RL = 1k
CL = 10.8pF SCOPE PROBE
5V
5V
0V2V/DIV
6200 G58
50ns/DIVVS = 5V, 0V
AV = 5
CL = 10.8pF SCOPE PROBE
0V
VIN
1V/DIV
0V
VOUT
2V/DIV
6200 G59
50ns/DIVVS = 5V, 0V
AV = 5
RL = 1k
CL = 10.8pF SCOPE PROBE
0V50mV/DIV
6200 G60
FREQUENCY (15MHz/DIV)
0
0
INPUT NOISE DENSITY (nV/√Hz)
1
3
4
10
60
6200 G61
2
6
5
8
9
7
30
15 75 90 135120
45 150
105
LT6200/LT6200-5
LT6200-10/LT6201
18
62001ff
Typical perForMance characTerisTics
LT6200-10
Gain Bandwidth and Phase Margin
vs Temperature Slew Rate vs Temperature Overshoot vs Capacitive Load
Power Supply Rejection Ratio
vs Frequency Output Impedance vs Frequency Open-Loop Gain vs Frequency
Gain Bandwidth vs Resistor Load
TEMPERATURE (°C)
–50
1000
GAIN BANDWIDTH (MHz)
PHASE MARGIN (DEG)
1200
1600
1800
2000
50
6200 G62
1400
0
–25 75 100
25 125
50
60
70
80
V
S
= ±5V
V
S
= ±5V
PHASE MARGIN
GAIN BANDWIDTH
V
S
= 3V, 0V
V
S
= 3V, 0V
TEMPERATURE (°C)
–50
SLEW RATE (V/µs)
350
650
700
750
050 75
6200 G63
250
550
450
300
600
150
200
500
400
–25 25 100 125
A
V
= –10
R
F
= R
L
= 1k
R
G
= 100Ω V
S
= ±5V RISING
V
S
= ±2.5V RISING
V
S
= ±2.5V FALLING
V
S
= ±5V FALLING
CAPACITIVE LOAD (pF)
10
0
OVERSHOOT (%)
10
20
30
40
60
100 1000
6200 G64
50
VS = 5V, 0V
AV = 10
RS = 0Ω
RS = 10Ω
RS = 20Ω
RS = 50Ω
FREQUENCY (Hz)
20
POWER SUPPLY REJECTION RATIO (dB)
30
50
70
80
1k 100k 1M 100M
6200 G65
10
10k 10M
60
40
0
POSITIVE
SUPPLY
NEGATIVE
SUPPLY
VS = 5V, 0V
TA = 25°C
VCM = VS/2
FREQUENCY (Hz)
0.01
0.1
OUTPUT IMPEDANCE (Ω)
10
1
100k 1M 10M
6200 G66
100
1000
100M
VS = 5V, 0V
AV = 100
AV = 10
FREQUENCY (Hz)
30
GAIN (dB)
PHASE (DEG)
90
100
20
10
80
50
70
60
40
100k 10M 100M 1G
6200 G67
–10
0
100
120
80
20
60
40
0
1M
V
S
= ±5V
V
S
= ±5V
GAIN
PHASE
V
CM
= 0V
C
L
= 5pF
R
L
= 1k
V
S
= ±1.5V
V
S
= ±1.5V
FREQUENCY (Hz)
30
GAIN (dB)
PHASE (DEG)
90
100
20
10
80
50
70
60
40
100k 10M 100M 1G
6200 G68
–10
0
–20
100
120
–40
–60
80
20
60
40
0
–100
–80
1M
VCM = 0.5V
VCM = 0.5V
GAIN
PHASE
VS = 5V, 0V
CL = 5pF
RL = 1k
VCM = 4.5V
VCM = 4.5V
TOTAL SUPPLY VOLTAGE (V)
0
GAIN BANDWIDTH (MHz)
PHASE MARGIN (DEG)
1600
1800
610
6200 G69
1400
1200
1000 2 4 8
50
60
70
80
90
12
T
A
= 25°C
R
L
= 1k
C
L
= 5pF
PHASE MARGIN
GAIN BANDWIDTH
RESISTOR LOAD (Ω)
0
0
GAIN BANDWIDTH (MHz)
200
600
800
1000
600 700 800 900
1800
G200 G70
400
100 200 300 400 500 1000
1200
1400
1600
V
S
= ±5V
R
F
= 10k
R
G
= 1k
T
A
= 25°C
Open-Loop Gain vs Frequency Gain Bandwidth and Phase Margin
vs Supply Voltage
19
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Typical perForMance characTerisTics
LT6200-10
Common Mode Rejection Ratio
vs Frequency
Maximum Undistorted Output
Signal vs Frequency
2nd and 3rd Harmonic Distortion
vs Frequency
2nd and 3rd Harmonic Distortion
vs Frequency ±5V Large-Signal Response Output-Overdrive Recovery
5V Small-Signal Response
FREQUENCY (Hz)
40
COMMON MODE REJECTION RATIO (dB)
80
120
20
60
100
10k 1M 10M 100M 1G
6200 G71
0100k
VS = 5V, 0V
VCM = VS/2
FREQUENCY (Hz)
3
OUTPUT VOLTAGE SWING (VP-P)
9
10
2
1
8
5
7
6
4
10k 1M 10M 100M
6200 G72
0100k
VS = ±5V
AV = 10
TA = 25°C
Input Referred High Frequency
Noise Spectrum
50ns/DIVVS = ±5V
AV = 10
RL = 1k
CL = 10.8pF SCOPE PROBE
2V/DIV 0V
5V
5V
6200 G75
50ns/DIVVS = 5V, 0V
AV = 10
CL = 10.8pF SCOPE PROBE
0V
VIN
1V/DIV
0V
VOUT
2V/DIV
6200 G76
50ns/DIVVS = 5V, 0V
AV = 10
RL = 1k
CL = 10.8pF SCOPE PROBE
50mV/DIV 0V
6200 G77
FREQUENCY (15MHz/DIV)
0
0
INPUT NOISE DENSITY (nV/√Hz)
1
3
4
10
60
6200 G78
2
6
5
8
9
7
30
15 75 90 135120
45 150
105
LT6200/LT6200-5
LT6200-10/LT6201
20
62001ff
applicaTions inForMaTion
Amplifier Characteristics
Figure 1 shows a simplified schematic of the LT6200
family, which has two input differential amplifiers in paral-
lel that are biased on simultaneously when the common
mode voltage is at least 1.5V from either rail. This topology
allows the input stage to swing from the positive supply
voltage to the negative supply voltage. As the common
mode voltage swings beyond VCC – 1.5V, current source I1
saturates and current in Q1/Q4 is zero. Feedback is main-
tained through the Q2/Q3 differential amplifier, but with
an input gm reduction of one-half. A similar effect occurs
with I2 when the common mode voltage swings within
1.5V of the negative rail. The effect of the gm reduction is
a shift in the VOS as I1 or I2 saturate.
Input bias current normally flows out of the “+” and “–”
inputs. The magnitude of this current increases when the
input common mode voltage is within 1.5V of the negative
rail, and only Q1/Q4 are active. The polarity of this current
reverses when the input common mode voltage is within
1.5V of the positive rail and only Q2/Q3 are active.
The second stage is a folded cascode and current mir-
ror that converts the input stage differential signals to a
single ended output. Capacitor C1 reduces the unity cross
frequency and improves the frequency stability with-
out degrading the gain bandwidth of the amplifier. The
differential drive generator supplies current to the output
transistors that swing from rail-to-rail.
The LT6200-5/LT6200-10 are decompensated op amps
for higher gain applications. These amplifiers maintain
identical DC specifications with the LT6200, but have a
reduced Miller compensation capacitor CM. This results
in a significantly higher slew rate and gain bandwidth
product.
Input Protection
There are back-to-back diodes, D1 and D2, across the
+ and – inputs of these amplifiers to limit the differential
input voltage to ±0.7V. The inputs of the LT6200 family
do not have internal resistors in series with the input
transistors. This technique is often used to protect the
input devices from overvoltage that causes excessive
currents to flow. The addition of these resistors would
significantly degrade the low noise voltage of these
amplifiers. For instance, a 100Ω resistor in series with
each input would generate 1.8nV/√Hz of noise, and the
total amplifier noise voltage would rise from 0.95nV/√Hz
to 2.03nV/√Hz. Once the input differential voltage ex-
ceeds ±0.7V, steady-state current conducted though
the protection diodes should be limited to ±40mA.
This implies 25Ω of protection resistance per volt of
continuous overdrive beyond ±0.7V. The input diodes
are rugged enough to handle transient currents due to
amplifier slew rate overdrive or momentary clipping
without these resistors.
DIFFERENTIAL
DRIVE
GENERATOR
R1 R2
R3 R4 R5
Q2 Q3
Q5 Q6
Q9
Q8 Q7
Q10
Q11
Q1 Q4
I
1
I
2
D3
D2D1
DESD2
DESD4DESD3
DESD1
DESD5
DESD8
DESD7
DESD6
+
C
M
C1
+V
–V
+V
+V
+V –V
–V
–V
V
+
V
6203/04 F01
BIAS V
SHDN
Figure 1. Simplified Schematic
21
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Figure 2 shows the input and output waveforms of the
LT6200 driven into clipping while connected in a gain of
AV = 1. In this photo, the input signal generator is clipping
at ±35mA, and the output transistors supply this generator
current through the protection diodes.
applicaTions inForMaTion
15MHz/DIV100kHz 150kHz
0V
V
CC
2.5V
V
EE
2.5V
6200 F02
Figure 2. VS = ±2.5V, AV = 1 with Large Overdrive
ESD
The LT6200 has reverse-biased ESD protection diodes on
all inputs and outputs, as shown in Figure 1. If these pins
are forced beyond either supply, unlimited current will
flow through these diodes. If the current is transient and
limited to 30mA or less, no damage to the device will occur.
Noise
The noise voltage of the LT6200 is equivalent to that of
a 56Ω resistor—and for the lowest possible noise, it is
desirable to keep the source and feedback resistance
at or below this value (i.e., RS + RG//RFB ≤ 56Ω). With
RS + RG//RFB = 56Ω the total noise of the amplifier is:
en = √(0.95nV)2 + (0.95nV)2 = 1.35nV. Below this resis-
tance value the amplifier dominates the noise, but in the
resistance region between 56Ω and approximately 6kΩ,
the noise is dominated by the resistor thermal noise. As
the total resistance is further increased, beyond 6k, the
noise current multiplied by the total resistance eventually
dominates the noise.
For a complete discussion of amplifier noise, see the
LT1028 data sheet.
Power Dissipation
The LT6200 combines high speed with large output cur-
rent in a small package, so there is a need to ensure that
the die’s junction temperature does not exceed 150°C.
The LT6200 is housed in a 6-lead TSOT-23 package. The
package has the V supply pin fused to the lead frame to
enhance the thermal conductance when connecting to a
ground plane or a large metal trace. Metal trace and plated
through-holes can be used to spread the heat generated by
the device to the backside of the PC board. For example,
on a 3/32" FR-4 board with 2oz copper, a total of 270mm2
connects to Pin 2 of the LT6200 (in a TSOT-23 package)
bringing the thermal resistance, θJA, to about 135°C/W.
Without an extra metal trace beside the power line con-
necting to the V pin to provide a heat sink, the thermal
resistance will be around 200°C/W. More information on
thermal resistance with various metal areas connecting
to the V pin is provided in Table 1.
Table 1. LT6200 6-Lead TSOT-23 Package
COPPER AREA
TOPSIDE (mm2)
BOARD AREA
(mm2)
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)
270 2500 135ºC/W
100 2500 145ºC/W
20 2500 160ºC/W
0 2500 200ºC/W
Device is mounted on topside.
Junction temperature TJ is calculated from the ambient
temperature TA and power dissipation PD as follows:
TJ = TA + (PD θJA)
The power dissipation in the IC is the function of the sup-
ply voltage, output voltage and the load resistance. For
a given supply voltage, the worst-case power dissipation
PD(MAX) occurs at the maximum quiescent supply current
and at the output voltage which is half of either supply
voltage (or the maximum swing if it is less than half the
supply voltage). PD(MAX) is given by:
PD(MAX) = (VS • IS(MAX)) + (VS/2)2/RL
Example: An LT6200 in TSOT-23 mounted on a 2500mm2
area of PC board without any extra heat spreading plane
connected to its V pin has a thermal resistance of
LT6200/LT6200-5
LT6200-10/LT6201
22
62001ff
applicaTions inForMaTion
200°C/W, θJA. Operating on ±5V supplies driving 50Ω
loads, the worst-case power dissipation is given by:
PD(MAX) = (10 • 23mA) + (2.5)2/50
= 0.23 + 0.125 = 0.355W
The maximum ambient temperature that the part is
allowed to operate is:
TA = TJ – (PD(MAX) • 200°C/W)
= 150°C – (0.355W • 200°C/W) = 79°C
To operate the device at a higher ambient temperature,
connect more metal area to the V pin to reduce the
thermal resistance of the package, as indicated in Table 1.
DD Package Heat Sinking
The underside of the DD package has exposed metal
(4mm2) from the lead frame where the die is attached.
This provides for the direct transfer of heat from the die
junction to printed circuit board metal to help control the
maximum operating junction temperature. The dual-in-line
pin arrangement allows for extended metal beyond the
ends of the package on the topside (component side) of
a PCB. Table 2 summarizes the thermal resistance from
the die junction-to-ambient that can be obtained using
various amounts of topside metal (2oz copper) area. On
multilayer boards, further reductions can be obtained using
additional metal on inner PCB layers connected through
vias beneath the package.
Table 2. LT6200 8-Lead DD Package
COPPER AREA
TOPSIDE (mm2)
THERMAL RESISTANCE
(JUNCTION-TO-AMBIENT)
4 160ºC/W
16 135ºC/W
32 110ºC/W
64 95ºC/W
130 70ºC/W
The LT6200 amplifier family has thermal shutdown to
protect the part from excessive junction temperature. The
amplifier will shut down to approximately 1.2mA supply
current per amplifier if 160°C is exceeded. The LT6200
will remain off until the junction temperature reduces to
about 150°C, at which point the amplifier will return to
normal operation.
23
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
package DescripTion
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
DD Package
8-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1698 Rev C)
3.00 ±0.10
(4 SIDES)
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON TOP AND BOTTOM OF PACKAGE
0.40 ± 0.10
BOTTOM VIEW—EXPOSED PAD
1.65 ± 0.10
(2 SIDES)
0.75 ±0.05
R = 0.125
TYP
2.38 ±0.10
14
85
PIN 1
TOP MARK
(NOTE 6)
0.200 REF
0.00 – 0.05
(DD8) DFN 0509 REV C
0.25 ± 0.05
2.38 ±0.05
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
1.65 ±0.05
(2 SIDES)2.10 ±0.05
0.50
BSC
0.70 ±0.05
3.5 ±0.05
PACKAGE
OUTLINE
0.25 ± 0.05
0.50 BSC
1.50 – 1.75
(NOTE 4)
2.80 BSC
0.30 – 0.45
6 PLCS (NOTE 3)
DATUM ‘A’
0.09 – 0.20
(NOTE 3) S6 TSOT-23 0302 REV B
2.90 BSC
(NOTE 4)
0.95 BSC
1.90 BSC
0.80 – 0.90
1.00 MAX 0.01 – 0.10
0.20 BSC
0.30 – 0.50 REF
PIN ONE ID
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
3.85 MAX
0.62
MAX
0.95
REF
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
1.4 MIN
2.62 REF
1.22 REF
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
LT6200/LT6200-5
LT6200-10/LT6201
24
62001ff
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
.016 – .050
(0.406 – 1.270)
.010 – .020
(0.254 – 0.508)× 45°
0°– 8° TYP
.008 – .010
(0.203 – 0.254)
SO8 0303
.053 – .069
(1.346 – 1.752)
.014 – .019
(0.355 – 0.483)
TYP
.004 – .010
(0.101 – 0.254)
.050
(1.270)
BSC
1234
.150 – .157
(3.810 – 3.988)
NOTE 3
8765
.189 – .197
(4.801 – 5.004)
NOTE 3
.228 – .244
(5.791 – 6.197)
.245
MIN .160 ±.005
RECOMMENDED SOLDER PAD LAYOUT
.045 ±.005
.050 BSC
.030 ±.005
TYP
INCHES
(MILLIMETERS)
NOTE:
1. DIMENSIONS IN
2. DRAWING NOT TO SCALE
3. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)
package DescripTion
Please refer to http://www.linear.com/designtools/packaging/ for the most recent package drawings.
25
62001ff
LT6200/LT6200-5
LT6200-10/LT6201
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
revision hisTory
REV DATE DESCRIPTION PAGE NUMBER
D 3/10 Change to Input Noise Voltage Density in the Electrical Characteristics section.
Change to X-Axis Range on Graph G61.
7
17
E 9/11 Updated typical value for tON in the Electrical Characteristics section.
Replaced curves G61 and G78 in the Typical Performance Characteristics section.
4-9
17, 19
F 12/11 Revised formatting of Slew Rate and Gain Bandwidth in Electrical Characteristics tables. 4-10
(Revision history begins at Rev D)
LT6200/LT6200-5
LT6200-10/LT6201
26
62001ff
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
LINEAR TECHNOLOGY CORPORATION 2002
LT 1211 REV F • PRINTED IN USA
Typical applicaTion
PART NUMBER DESCRIPTION COMMENTS
LT1028 Single, Ultralow Noise 50MHz Op Amp 1.1nV/√Hz
LT1677 Single, Low Noise Rail-to-Rail Amplifier 3V Operation, 2.5mA, 4.5nV/√Hz, 60µV Max VOS
LT1722/LT1723/LT1724 Single/Dual/Quad Low Noise Precision Op Amp 70V/µs Slew Rate, 400µV Max VOS, 3.8nV/√Hz, 3.7mA
LT1806/LT1807 Single/Dual, Low Noise 325MHz Rail-to-Rail Amplifier 2.5V Operation, 550µV Max VOS, 3.5nV/√Hz
LT6203 Dual, Low Noise, Low Current Rail-to-Rail Amplifier 1.9nV/√Hz, 3mA Max, 100MHz Gain Bandwidth
Rail-to-Rail, High Speed, Low Noise Instrumentation Amplifier
+
+
LT6200-10
+
LT6200-10
LT6200-10
604Ω
1k
49.9Ω
V
OUT
A
V
= 10
6200 TA03
A
V
= 13
100Ω
1k
100Ω
604Ω
49.9Ω
49.9Ω
150pF
Instrumentation Amplifier Frequency Response
relaTeD parTs
FREQUENCY (MHZ)10 100
42.3dB
6200 TA04
AV = 130
BW–3dB = 85MHz
SLEW RATE = 500V/µs
CMRR = 55dB at 10MHz
3dB/DIV