Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Ultra Low Capacitance ESD Protection Diode
RSAC18CS
lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm)
ESD Protection
lFeatures
1)Ultra small mold type.(VMN2)
2)Low capacitance.
3)High reliability.
4)Bi chip-mounter,automatic mounting
is possible.
lStructure
lConstruction
Silicon epitaxial planer
lAbsolute maximum ratings (Ta=25C)
Symbol Unit
PmW
Tj
C
Tstg
C
lElectrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit
Vz18.20 - 19.35 V IZ=2mA
IR- - 0.1 nA VR=13V
Ct - 0.3 - pF
VR=0V , f=1MHz
*1) Zener voltage (VZ) shall be measured at 40ms after loading current.
*2) Electrical characteristic assurance is just only zener direction.
Storage temperature
-55 to +150
lTaping dimensions (Unit : mm)
Parameter
Limits
Power dissipation
100
Junction temperature
150
Parameter
Conditions
Zener voltage
Reverse current
Capacitance between terminals
VMN2
0.55
0.5
0.45
0.45
ROHM : VMN2
dot (year week factory)
0.16±0.05
0.37±0.03
0.6±0.05
0.35±0.1
0.9±0.05
1.0±0.05
0.156
0.7±0.05
4.0±0.1
2±0.05
φ0.5
4±0.1
2±0.05
φ1.55
1.75±0.1
8.0±0.2
3.5±0.05
1.1±0.05
0.2±0.05
0.52
1/3
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSAC18CS
0.01
0.1
1
10
10 15 20 25
Ta=150°C
Ta=75°C
Ta=25°C
Ta=125°C
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
0.1
1
10
100
1000
10000
0 5 10 15
Ta=125°C
Ta=25°C
Ta=75°C
Ta=150°C
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE CURRENT:IR (pA)
0.1
1
10
0 1 2 3 4 5 6
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
V
R
-Ct CHARACTERISTICS
f=1MHz
15
16
17
18
19
20
Vz DISPERSION MAP
ZENER VOLTAGE:Vz(Ｖ)
AVE:18.66V
Ta=25°C
IZ=2mA
n=30pcs
10
100
IR DISPERSION MAP
Ta=25°C
VR=13V
n=30pcs
AVE:16.29pA
REVERSE CURRENT:IR(pA)
0
0.1
0.2
0.3
0.4
0.5
Ct DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
AVE:0.31pF
Ta=25°C
f=1MHz
VR=0V
n=10pcs
2/3 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RSAC18CS
10
100
1000
10000
0.1 1 10
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
DYNAMIC IMPEDANCE:Zz(Ω)
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
On glass-epoxy substrate
TRANSIENT
THERMAL IMPEDANCE:Rth (
°
C/W)
TIME:t(s)
Rth-t CHARACTERISTICS
0
5
10
15
20
25
30
C=200pF
R=0Ω
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
No break at 30kV
AVE：0.96kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
3/3 2011.10 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes
